• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.253.1-253.1
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• 2014

Plasma technology has been widely used for decontamination, differentiation, and disease treatment. Recently, studies show that plasma has effects on increasing seed germination and plant growth. In spite of increasing number of studies about plasma effects, the interaction between plasma and plants has been rarely informed. In this study, we have analyzed the effects of nonthermal atmospheric pressure plasma on seed germination and growth of coriander (Coriandum sativum), a medicinal plant. We used to Ar, air, and N2 plasma on seed as feeding gases. Plasma was discharged at 0.62 kV, 200 mA, 9.2 W. Seed germination was increased over time when treated with N2 based DBD plasma for exposure times of 30 seconds and 1 minute, everyday. After 7 days, about 80~100% of seeds were germinated in the treatment with N2 based DBD plasma, compared to control (about 40%, only gas treated seeds). In order to elucidate the mechanism of increased germination, we have analyzed characteristics of changes in plant hormones and seed surface structure by SEM.

• Applied Science and Convergence Technology
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• 제27권3호
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• pp.47-51
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• 2018

We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

• 한국재료학회지
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• 제7권9호
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• pp.811-823
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• 1997

차세대 반도체 배선분야에서, Cu박막은 현재의 AI을 대체할 물질로서 대두되고 있으며 CVD에 의한 선택적 증착은 Cu의 patterning과 관련하여 상당한 관심을 일으키고 있다. 본 연구에서는 (hfac)Cu(VTMS)의 유기원료를 사용하여, CVD공정변수, 운반기체, 표면 처리 공정에 따른 SiO$_{2}$, TiN, AI기판에 대한 선택성을조사하였다. 선택성은 저온(15$0^{\circ}C$), 저합(0.3Torr)에서 향상될 수 있었으며, 특히, HMDS in-situ-predosing공정에 의해 더욱 향상될 수 있었다. 모든 경우에 대해, H$_{2}$운반기체가 Ar 보다 짧은 incubation time과 높은 증착 속도가 얻어졌으며, Cu입자들의 크기가 작고 연결상태가 보다 양호하였다. 이는 H$_{2}$경우에 기판표면에 원료가 흡착되어 핵을 형성시키는 위치 (-OH)가 보다 많이 제공되기 때문으로 여겨진다. 이러한 미세구조의 차이는 H$_{2}$경우에 보다 낮은 비저항을 얻게 했다. HMDS in-situ predosing공정에 의한 Cu박막내 불순물 차이는 없었으며 뚜렷한 비저항의 차이도 나타나지 않았다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1028-1031
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• 2002

Ga-based semiconductor nanowires (GaN, GaP) were synthesized by the reaction of Ga metal and GaN/GaP powder with a $NH_3/Ar$ gas using thermal chemical vapor deposition. The field emission and emission stability under oxygen and argon environments were investigated. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from carbon nanotubes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.97-100
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• 2001

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16%)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vaccum furnace range $500\sim1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho=768.93$ ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

• E2M - 전기 전자와 첨단 소재
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• 제1권4호
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• pp.319-332
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• 1988

높은 포화자속밀도와 낮은 철손을 갖는 Fe/aub 80/B$_{12}$Si$_{8}$ 비정질합금을 일반열처리, 자장열처리시켜 그의 자기적특성과 자구구조와의 관계를 조사하였다. 이를 위하여 Fe$_{80}$B$_{12}$Si$_{8}$ 비정질리본을 단롤법으로 제작하여 결정화온도를 측정하였으며 측정된 결정화온도 이하의 여러 온도에서 30분간 Ar-gas 분위기하에서 일반열처리, 자장열처리를 행하였다. 이와같이 하여 준비된 시료의 자기적특성을 조사하기 위하여 D.C., A.C. Recorking Fluxmeter를 이용하였으며 자구구조는 Bitter method로 관찰하였다. as-cast 상태의 시료를 일반열처리함에 따라 내부응력이 완화되면서 maze자구가 점차 사라지고 wave형태의 180.deg.자구가 관찰되었다. 동시에 자화과정에 있어서 자기이력곡선은 Barkhausen jump가 없어 smooth하였다. 그리고 자장열처리시에는 as-cast 상태나 일반열처리에 비해 자기적특성이 현저하게 향상되었으며 이는 열처리를 행함에 따라 내부응력이 완화되면서 maze 자구가 없어지고 일축자기 이방성으로 리본길이방향에 평행하게 형성된 180.deg.자구에 기인하는 것이라 사료된다. 그리고 자장열처리의 경우, 폭방향으로 열처리한 리본의 자구폭은 길이방향으로 열처리한 리본의 폭보다 미세하였으며 전자의 이력손실이 후자의 것보다 더 컸다.다.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.159-163
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• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 한국분말재료학회지
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• 제13권6호
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• pp.408-414
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• 2006

[ $MoSi_2$ ] alloys with Al, B or Nb were prepared by an advanced consolidation process that combined mechanical alloying with pulse discharge sintering (complex forming) to improve the mechanical properties. Their microstructure and mechanical properties were investigated. The $MoSi_2$ alloys fabricated by complex forming method showed very fine microstructure when compared with the sample sintered from commercial $MoSi_2$ powders. Alloys made from powders milled in Ar gas had fewer silica or alumina phases as compared to their counterparts sintered from powders milled in air. In densification of the sintered body, addition of B was more effective than Al or Nb. Both Victors hardness and tensile test indicated that the alloy fabricated by the complex forming method showed better properties than the sample sintered from commercial $MoSi_2$ powders. The Al added alloy sintered from the powders milled in air had the superior mechanical properties due to the suppression of $SiO_2$ and formation of fine $Al_2O_3$ particles.

• 센서학회지
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• 제16권4호
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• Progress in Superconductivity
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• 제12권1호
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• pp.1-5
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• 2010

In this work we synthesized both MgB2 and Carbon doped MgB2 superconductor with Ag addition via high energy milling and substituent heat treatment. Heat treatments were performed at $900\;^{\circ}C$ for 30 min in flowing Ar gas. We varied amount of Ag powder. In a range of Ag powder was 0~5wt%. The effect of Ag was correlated with superconducting properties. The results show a slight decrease in critical temperature ($T_c$) and a reduction of critical current density ($J_c$) at high fields for the Ag-doped samples as compared to the un-doped samples. Reduction of $J_c$ may be due to the formation of MgAg compound.