• Journal of the Korean institute of surface engineering
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• v.36 no.6
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• pp.480-490
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• 2003

Effects of plasma-nitriding on the pitting corrosion of Fe-30at%Al-5at%Cr alloy containing Ti, Hf, and Zr were investigated using potentiostat in 0.1M HCl. The specimen was casted by the vacuum arc melting. The subsequent homogenization was carried out in Ar gas atmosphere at $1000^{\circ}C$ for 7days and phase stabilizing heat treatment was carried out in Ar gas atmosphere at $500^{\circ}C$ for 5 days. The specimen was nitrided in the $N_2$, and $H_2$, (1:1) mixed gas of $10^{-4}$ torr at $480^{\circ}C$ for 10 hrs. After the corrosion tests, the surface of the tested specimens were observed by the optical microscopy and scanning electron microscopy(SEM). For Fe-30at%Al-5Cr alloy, the addition of Hf has equi-axied structure and addition of Zr showed dendritic structure. For Fe-30at%Al-5Cr alloy containing Ti, plasma nitriding proved beneficial to decrease the pitting corrosion attack by increasing pitting potential due to formation of TiN film. Addition of Hf and Zr resulted in a higher activation current density and also a lower pitting potential. These results indicated the role of dendritic structure in decreasing the pitting corrosion resistance of Fe-30Al-5Cr alloy. Ti addition to Fe-30Al-5Cr decreased the number and size of pits. In the case of Zr and Hf addition, the pits nucleated remarkably at dendritic branches.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.5
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• pp.267-274
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• 2009

Titanium Chromium Nitrided (TiCrN) coatings were deposited on stainless steel 316 L and Si (100) wafer by inductively coupled plasma assisted D.C. magnetron sputtering at the various sputtering power on Cr target and $N_2/Ar$ gas ratio. Increasing the sputtering power of Cr target, XRD patterns were changed from TiCrN to nitride $Cr_2Ti$. The maximum hardness was $Hk_{3g}$ 3900 at $0.3\;N_2/Ar$ gas ratio. The thickness of the TiCrN films increased as the Cr target power increased, and it showed over $Hk_{5g}3100$ hardness at 100 W, 150 W. TiCrN films were deposited by the ICP assisted DC magnetron sputtering shown good wear resistance as the $N_2/Ar$ gas ratio was 0.1, 0.3.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.3
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• pp.355-362
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• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.

• Korean Journal of Materials Research
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• v.19 no.7
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• pp.376-381
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• 2009

Indium Tin Oxide (ITO) thin films on Polyethylene Terephtalate (PET) substrate were prepared by Roll-to-Roll sputter system with targets of 5 wt% and 10 wt% $SnO_2$ at room temperature. The influence of the chromaticity (b*) and transmittance properties of the ITO Films were investigated. The ITO thin films were deposited as a function of the DC power, rolling speed, and Ar/$O_2$ gas flow ratio, and then characterized by spectrophotometer. Their crystallinity and surface resistance were also analyzed by X-ray diffractometer and 4-point probe. As a result, the chromaticity (b*) and transmittance of the ITO films were broadly dependent on the thickness, which was controlled by the rolling speed. When the ITO films were prepared with the DC power of 300 W and the Ar/$O_2$ gas flow ratio of 30/1 sccm using 10 wt% $SnO_2$ target as a function of the rolling speeds 0.01 through 0.10 m/min, its chromaticity (b*) and transmittance were about -4.01 to 11.28 and 75.76 to 86.60%, respectively. In addition, when the ITO films were deposited with the DC power of 400W and the Ar/$O_2$ gas flow ratio of 30/2 sccm used in 5 wt% $SnO_2$ target, its chromaticity (b*) and transmittance were about -2.98 to 14.22 and 74.29 to 88.52%, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.2
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• pp.535-541
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• 2013

The present study was carried out to investigate the effects of welding parameters such as current, voltage and shielding gases on the bead shape, microstructures and hardness. It was confirmed that bead height was lowered and bead depth was increased with increasing voltages while height, depth and width of beads increased with welding currents. The hardness of weld metals with Ar+10% $O_2$ and Ar+20% $CO_2$ was low due to the formation of grain boundary and polygonal ferrites while that of weld metals with Ar+2% $O_2$ was high due to the presence of acicular, bainitic and sideplate ferrites.

• Korean Journal of Materials Research
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• v.28 no.5
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• pp.301-307
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• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• The Journal of the Petrological Society of Korea
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• v.7 no.2
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• pp.69-76
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• 1998

$^{40}Ar/^{39}Ar$ analytical data of hornblende and muscovite separates from granitic rocks in southwestern region of Ogcheon belt shows fellowing tectonic implication, $^{40}Ar/^{39}Ar$ data of 5 samples yield apparent age spectra and $^{37}Ar_{ca}/^{39}Ar_k$ and $^{38}Ar_{CI}/^{39}Ar_k$ plateaus for more than 60% of the $^{39}Ar$ release. Except for HN-100, the $^{36}Ar/^{40}Ar$ versus $^{39}Ar/^{40}Ar$ corelalation diagrams indicate the presence of one distint line. Muscovite of sample PKJ-44 yield flate apparent age plateau for > 60% of the $^{39}Ar_k$ release. In the high temperature steps, the $^{37}Ar_{ca}/^{39}Ar_k$ values are irregular with a correlative increase in $^{38}Ar_{CI}/^{39}Ar_k$, suggesting some Ca and CI rich phase, tapped between the silicate sheet is being argon degassed. The $^{40}Ar/^{39}Ar$ total gas age and the high temperature age of HN-100 is 918.2 Ma and 1360 Ma, respectively. The former affectted by recystallized age of Daebo Orogeny, and the latter indicated age of hornblende closure temperature for cooling stage of amphibole xenolith in granite gneiss. Three rock types of Kwangju granites show about 165 Ma hornblende and muscovite ages with some degassed argon at low temperature steps. These ages of 4 samples indicate also recrystallized age by Daebo Orogeny. In $^{40}Ar/^{39}Ar$ mineral age, Rb/Sr whole age and K/Ar mineral age, discordant ages of southwestern region of Ogcheon belt suggesting cooling rates approaching 3~4$^{\circ}C$/m. y. Such slow cooling rates can be produced by uplift rate of 100m/m.y. or slightly slower than isothem-migration rate derived from the hornblende samples. We conclude that the strongest Orogeny and igneous activity of southwestern region of Ogcheon belt are middle proterozoic era (about 1360 Ma) and middle Jurassic period (about 165 Ma).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1553-1555
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• 1999

Recently, $SrBi_2Ta_2O_9$(SBT) and $Pb(ZrTi)O_3$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) showing higher read/write speed, lower power consumption and nonvolartility. Bi-layered SBT thin film has appeared as the most prominent fatigue free and low operation voltage for use in nonvolatile memory. To highly integrate FRAM, SBT thin film should be etched. A lot of papers on SBT thin film and its characteristics have been studied. However, there are few reports about SBT thin film due to difficulty of etching. In order to investigate properties of etching of SBT thin film, SBT thin film was etched in $CF_4$/Ar gas plasma using magnetically enhanced inductively coupled plasma (MEICP) system. When $CF_4/(CF_4+Ar)$ is 0.1, etch rate of SBT thin film was $3300{\AA}/min$, and etch rate of Pt was $2495{\AA}/min$. Selectivities of SBT to Pt. $SiO_2$ and photoresist(PR) were 1.35, 0.6 and 0.89, respectively. With increasing $CF_4$ gas, etch rate of SBT thin film and $P_t$ decreased.