• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.102-105
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell (LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement.

• Journal of the Korean Vacuum Society
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• v.3 no.4
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• pp.395-400
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• 1994

본 연구에서는 LRDC 트랜스듀서를 장착한 변형된 회전 진자를 제작하여 1$\times$10-2 Torr에서 1-10-5 Torr 사이의 Ar 압력을 측정하였다. 비구동 회전 진자의 진폭은 기체 분자와의 충돌에 의한 감 쇄가 일어난다. 회전 진자의 감쇄에 의한 특성 함수를 측정하여 본 연구팀은 일반적인 진공 측정 장비 로는 측정이 어려운 1-10-5 Torr에서 1-10-5 Torr 사이의 Ar 압력을 정확하게 측정할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.515-517
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• 1997

In this paper, the penning effect was studded to control accelerating of the ionization that means Increasing of cross-sectional collision through penning reactions in the plasma cells of Hg-Ar-Ne (x: 10-x, 60Torr) gas discharge under various concentrations of Ar.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.197-201
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• 2001

The influence of argon, oxygen, and nitrogen admixtures on the dissociation of $Cl_2$ molecules in a glow discharge low-temperature plasma under the constant pressure conditions was investigated. For $Cl_2/Ar$ and $Cl_2/O_2$mixtures, the concentration of chlorine atoms was observed to be a practically constant at argon or oxygen concentrations up to 50%. This invariability is a most pro bably explained by relative increase in rate of $Cl_2$ direct electron impact dissociation due to the changes in electrophysical parameters of plasma such as EEDF, electron drift rate and mean energy. For all the considered mixtures, the contribution of stepwise dissociation involving active species from gas additives (metastable atoms and molecules, vibrationally excited molecules) was found to be negligible.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.657-659
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• 2004

Trivalent cerium ($Ce^{3+}$) activated yttrium aluminum garnet ($Y_3Al_5O_{12}$, YAG) phosphor thin films were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters and annealing condition on the luminescent properties were investigated. The sputtering parameters were $O_2$/Ar gas ratio, rf power, and deposition time. The films were annealed at 1200 $^{\circ}C$ for 5 hours in $N_2+$vacuum atmosphere. Polycrystalline YAG:Ce thin film phosphor could be obtained with a gas ratio of $O_2$/(Ar+$O_2$)=0.5 after post-annealing. PL spectra excited at 450 nm showed a yellow single band at 550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.841-843
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• 1998

The fiat fluorescent lamp(FFL) can be used to the LCD bat]flighting. In order to evaluate the discharge characteristics of FFL firing voltage, discharge current, luminance and CIE chromaticity with frequency were measured. The experimental results show that firing voltage decreased with increasing the frequency, discharge current increased with increasing the frequency. Luminance of FFL using Xe gas shown $2700\;cd/m^2$ in 700V rms, 80 kHz.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.798-800
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• 1998

(Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KWS Conference
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• 2008.05a
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• pp.22-22
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• 2008

• Journal of Magnetics
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• v.15 no.3
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• pp.132-137
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• 2010

Plasma etching of $SiO_2$ contact holes was statistically analyzed by a fractional factorial experimental design. The analysis revealed the dependence of the etch rate and DC self-bias voltage on the input factors of the magnetically enhanced reactive ion etching reactor, including gas pressure, magnetic field, and the gas flow rates of $CHF_3$, $CF_4$, and Ar. Empirical models of the DC self-bias voltage and etch rate were obtained. The DC self-bias voltage was found to be determined mainly by the operating pressure and the magnetic field, and the etch rate was related mainly to the pressure and the flow rates of Ar and $CHF_3$.