• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.727-732
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• 2008

In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Food Science and Preservation
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• v.21 no.2
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• pp.163-169
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• 2014

The effect of the combined argon (Ar) gas packaging treatment on the browning of fresh-cut potatoes was studied. Fresh-cut potatoes were prepared for the following six groups: dipping distilled water for 1 minute and air packaging (Cont); dipping in distilled water for 1 minute and argon gas packaging (AR); dipping in 1% ascorbic acid for 1 minute and air packaging (AA); dipping in 1% ascorbic acid for 1 minute and argon gas packaging (AAR); blanching at $35^{\circ}C$ for 30 minutes and air packaging (BL); and blanching at $35^{\circ}C$ for 30 minutes and argon gas packaging (BAR). The potatoes were washed, peeled, and sliced ($1.5{\times}1.5{\times}1.5$ cm) before treatment. The samples were packed with a 0.04-mm-thick OPP film and were stored at $5^{\circ}C$ for 9 days. During the storage, the $O_2$ concentration decreased in Cont but increased in the AR, AA, AAR, BL, and BAR groups. The $CO_2$ concentration increased during storage. The AR, AAR, and BAR groups showed high $L^*$ and low $a^*$, $b^*$ values (browning index). The growth of the total aerobic bacteria was also inhibited in the AR group. During storage, the PPO activity gradually increased, and the AR group showed lower PPO activity. The AA and AAR groups showed high DPPH radical scavenging activity. It was demonstrated that the argon gas packaging is effective in the quality maintenance of fresh-cut potatoes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.192-192
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• 2009

AZO films were prepared by $Ar:H_2$ gas RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a low temperature of $100^{\circ}C$. To investigate the influence of $H_2$ flow ratio on the properties of AZO films, $H_2$ flow ratio was changed from 0.5% to 2%. As a result, the AZO films deposited with 1% $H_2$ addition showed electrical properties with a resistivity of $5.06{\times}10^{-3}{\Omega}cm$. The spectrophotometer-measurements showed the transmittance of 86.5% was obtained by the film deposited with $H_2$ flow ratio of 1% in the range of 940nm for GaAs/GaAlAs LED.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 1997.10a
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• pp.37-42
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• 1997

This paper describes result of experiment of parameters affecting the micro hole drilling time, kind of assisting gas and it's pressure. The result reveals that parameter value of 0.08J, 20Hz, dwell time of 300 microseconds can be a good machining condition to make micro hole diameter range of 50-70${\mu}{\textrm}{m}$, Assistant gas such air, O2, Ar, N2 was adapted. Assistant gas of air makes heat affected zone enlarge due to burning of material, also it makes hole irregular and damage because of refusion stick to caused by chemical reaction with Al2O3 ceramic material. O2(99.9%) has good characteristic to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$, but it is expensive. Ar, N2 makes material burn and crack severely and proved to be an appropriate but, Ar was better than N2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.384-384
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• 2010

The surface reaction characteristics of Zinc Oxide (ZnO) in $Cl_2/BCl_3$/Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2$(3 sccm)/$BCl_3$(16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS).

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.346-348
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• 2005

TIG welding can produce high quality of weld, but has the disadvantage of low productivity and high possibility of lack-of-fusion especially on heavy wall groove welding. In order to overcome such demerits of TIG welding, the hot-wire method which provides pre-heated wire and the use of He-Ar mixture gas as shielding gas were adopted. Through this study, both methods were turned out to be beneficial to the prevention of lack-of-fusion and the increase of productivity and welding speed.

• Mass Spectrometry Letters
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• v.10 no.1
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• pp.27-31
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• 2019

In this article, the properties of ${CO_2}^+(CO_2)_n$ clusters in a Paul ion trap have been investigated using mass-selective instability mode which conducted by chosen precursor ions, mainly $Ar^+$ and ${CO_2}^+$ produced by a mixture of Ar and $CO_2$. Exposure of ${CO_2}^+$ ions to $CO_2$ molecules, lead to the formation of ${CO_2}^+(CO_2)_n$ clusters. Here, Ar gas react as a buffer gas and lead to form ${CO_2}^+(CO_2)_n$ cluster by collisional effect.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.5
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• pp.115-120
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• 1999

This research is a described result of experimental for the parameter's effecting the microhole machining by Nd-Yag laser, The parameters are energy, pulse interval time a kin of assisting gas and its pressure. The result reveals that parameter value of energy 0.08J, pulse 20Hz, interval time of 300 microseconds could be a good machining condition to make upper microhoel that is the diameter range of 50-70${\mu}{\textrm}{m}$. At tat time the assistant gas such air, $O_2$, Ar $N_2$, was appelied. Assistant gas of air makes heat affected zone enlarge due to burning of material surface. Also it makes microhole irregular and damageable. Because of refusion caused by chemical reaction with $Al_2O_3$ ceramic material . The $O_2$(99.9%) has good characteristics to get good drilling and smooth surface on pressure of 0.2kgf/$\textrm{cm}^2$ but it is expensive. Ar, $N_2$ make material crack and burnning and proved that to be unappropriate but, Ar was a better than $N_2$.