• Korean Journal of Materials Research
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• v.11 no.7
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• pp.580-584
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• 2001

We have investigated the deposition characteristics of Ti-Si-N films obtained by rf magnetron sputtering with ratios of Ti/Si targets in an $Ar/N_2$ gas mixture. The growth rate and stoichiometry dependence of the Ti-Si-N films on the ratio of Ti/Si and $N_2$ flow rate ratio were found to be due to the different nitriding rate of Ti and Si targets. Additionally, their different sputtering yield of nitrified Ti and Si make a reason as well. Lowering Si content in the film favored the formation of crystalline TiN, leading to the low resistivity. Increasing N content led to the Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the film is one of the most important factors determining the diffusion barrier characteristics. In the current work, the optimum process conditions for the formation of efficient diffusion barrier of Ti-Si-N film has successfully obtained by manipulating the Ti/Si ratio of target and $N_2$ flow rate ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.676-680
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• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1375-1377
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• 2001

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, in which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%) $N_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition($300^{\circ}C$, 3 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}{\Omega}$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4$\sim$20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS..

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.371-376
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• 1996

Au films with a thickness around 1600 $\AA$ were deposited onto glass at room temperature by ion beam sputtering with a 5 cm cold-hollow ion gun at pressure $1\times 10^{-6}-1\times 10^{-5}$ Torr. Irradiation of the Au deposited samples was carried out at pressure of $7\times 10^{-6}$ Torr. For the sputter depositions, $Ar^+$ ion energy was 1 keV, and the current density at the substrate surface was 15 $\mu$A/$\textrm{cm}^2$. Effects of 1 keV $Ar^+$ ion dose($I_d$) between $1\times 10^{16}\; and\;2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$on properties such as crystallinity, surface roughness and adhesion, etc. of the films have been investigated. The Au films sputtered by $Ar^+$ ion beam had only (111) plane and the X-ray intensity of the films decreased with increase of $I_d$. The thickness of Au films reduced with Id. $R_{ms}$ surface roughness of the films increased from 16 $\AA$ at as-deposited to 1118 $\AA$ at ion dose= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$. Adhesion of Au film on sputtered at $I_d$= $2\times 10^{17}\;Ar^+\textrm{cm}^{-2}$ was 9 times greater than that of Au film with untreated, as determined by a scratch test.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.22-27
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• 2002

We investigated the crystal structure, resistivity, and chemical states change of the tungsten nitride $(WN_x)$ films prepared by reactive sputtering method with various $N_2$ flow ratios. Crystal structures of $WN_x$ films deposited at the $N_2$ flow ratios of 20%, 40%, and 60% were bcc $\beta$-W, amorphous, and fcc $W_2$N, respectively. Surface roughness of $WN_x$ film was smallest when the $WN_x$ film is amorphous. After the air exposure of $WN_x$ films, $WO_3$ layer was formed at the surface of all samples. Both the nitrogen content of $WN_x$ film and the binding energy of W $4f_{7/2}$ peaks increased with increasing $N_2$ flow ratio. However, after $Ar^+$ ion etching, the shift of W $4f_{7/2}$ peaks was not observed with $N_2$ flow ratio due to the amorphization of the $WN_x$ film surface. The resistivity of $WN_x$ films increased with increasing $N_2$ flow ratio.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.49-61
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• 1981

A generally applicable computer simulation program for diffused silicon solar cells has been developed on the basis of the experimental results. The program can be easily used to obtain the spectral response and I-V characteristics for N+P, P+N N+PP+, P+NN+cells by changing various input parameters. The insolated spectra can be taken from AMI and constant intensity and GE - ELH lamp light sources. The options for AR coating are Si3N4 film and materials with constant reflectance including zero reflectance for ideal case. The computer simulation demonstrates successful results compared with the measured values for the short circuit current, open circuit voltage, efficiency, spectral response, quantum efficiency, I-V characteristics, etc. This program was used to optimize doping concentration, cell thickness, light concentration, junction depth, and to obtain the limit values for front surface recornbination velocity, effective carrier life time in the depletion regions and shunt resistance, and also to drive the changing rate in conversion efficiency depending on operation temperature, series resistance and electric field strength in N+P+ bulk regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.94.2-94.2
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• 2017

TiN 박막은 음극 아크 증착(Cathodic Arc Deposition) 방법을 이용하여 단층과 빗각 증착(Oblique Angle Deposition; OAD)으로 다층 박막 제조하여 잔류응력 변화에 대해서 확인하였다. 타겟은 99.5% Ti이고, 기판은 Si wafer를 사용하였다. 기판과 타겟 간의 거리는 29cm이며, 기판을 진공챔버에 장착하고 ${\sim}2.0{\times}10^{-5}Torr$까지 진공배기를 실시하였다. 진공챔버가 기본 압력까지 배기되면 Ar 가스를 주입한 후 약 800V 의 전압을 인가하여 약 30분간 청정을 실시하였다. TiN 박막은 Ar와 $N_2$ 가스를 주입하여 코팅하였으며 모든 박막의 두께는 약 $1{\mu}m$로 고정 하였다. 공정 변수는 기판 인가 전압 이었다. 음극 아크를 이용하여 제조된 TiN 박막은 공정 조건에 따라 잔류응력 변화가 확인되었다. 바이어스를 인가한 단층 박막이 인가하지 않는 박막 보다 잔류응력이 약 1 GPa 증가하였다. 빗각 증착으로 코팅한 다층 박막의 잔류응력은 약 3.4 GPa로 빗각을 적용하지 않은 단층의 코팅 박막 보다 약 2~3 GPa의 잔류응력 감소가 있었다. 이는 빗각구조가 박막의 잔류응력을 감소시키는데 영향을 미친 것으로 판단된다. 본 연구를 통해 얻어진 결과를 바탕으로 빗각 증착을 활용하여 박막의 잔류응력 제어가 가능할 것으로 보인다.