• 제목/요약/키워드: Antireflection

검색결과 136건 처리시간 0.024초

Si 태양전지에서 SiO2 광반사 방지막의 처리 효과 (Effect of SiO2 Antireflection Coating on the Si Solar Cell)

  • 장지근;임용규;황용운;조재욱
    • 한국재료학회지
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    • 제14권2호
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    • pp.152-156
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    • 2004
  • We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

태양전지의 반사방지막 (Antireflection coatings for solar cells)

  • 김동섭;이수홍
    • 한국결정성장학회지
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    • 제6권1호
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    • pp.98-106
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    • 1996
  • 반사방지용 코팅은 태양전지에 있어서 아주 중요한 부분중의 하나이다. 태양전지의 표면에서 반사된 빛은 전지의 효율감소와 직결되기 때문에 반사를 줄이기 위한 많은 노력이 진행되어 왔다. 본 논문은 반사방지막의 원리를 소개하고 태양전지에서 반사방지막으로 많이 사용되는 재료의 광학적 성질과 제조방법에 대해서 알아 보았다.

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Study of Implementation of Broadband Antireflection Coating for Luminescent Solar Concentrators to Optimized the Efficiency

  • Duy, Song Ngo
    • International journal of advanced smart convergence
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    • 제11권2호
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    • pp.59-63
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    • 2022
  • In this study, we study of luminescent solar concentrators comprise thick glass with broadband antireflection coating deposited on the top surfaces and inorganic phosphor layers contacted on the bottom surfaces. Solar cells are contacted to the lateral surfaces of the glass. Experimental results show the broadband antireflection coating increased the short-circuit current of the solar cell.

적색검출 Si 포토다이오드의 광반사 방지막 처리 (Antireflection Layer Coating for the Red Light Detecting Si Photodiode)

  • 장지근;황용운;조재욱;이상열
    • 한국재료학회지
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    • 제13권6호
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    • pp.389-393
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    • 2003
  • The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{+}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

굴절률 분포에 따른 박막 실리콘 태양전지 반사방지막 설계기술 연구 (The Study on the Antireflection(AR) Coating Design Scheme According to the Index Profile in the Thin-Film Silicon Solar Cell)

  • 김창봉
    • 한국산학기술학회논문지
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    • 제13권9호
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    • pp.4139-4145
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    • 2012
  • 본 논문에서는 향후 태양전지 반사방지막에 적용여부를 알기 위하여 굴절률 분포에 따른 반사방지막의 성능을 분석하였다. 기존논문에서 제시되었던 1차, 3차 및 5차 함수의 굴절률 분포를 6층 구조의 두께 180 nm 반사방지막에 적용하고 각 굴절률 분포에 대한 반사율을 계산하고 비교하였다. 또한 새로운 구배형 굴절률(graded index) 구조를 제안하였고, 제안한 구조와 기존의 1차, 3차 및 5차 함수의 반사율과 비교하였다. 그 결과로써, 굴절률 분포가 고차 함수로 갈수록 반사율이 대체적으로 감소하였고, 구배형 굴절률 분포의 경우는 짧은 파장대(500 nm ~ 700 nm 이하)에서는 1차, 3차 및 5차 함수보다 더 높은 반사율을 보였고, 긴 파장대(700 nm 이상 ~ 800 nm)에서는 더 낮은 반사율을 보였다. 따라서 긴 파장대에서는 구배형 굴절률 분포가 기존의 1차, 3차, 5차 함수인 경우보다 더 좋은 반사방지막이 될 수 있다는 것을 발견했고, 이 결과는 긴 적색 가시광선에서 적외선 영역에 적용되는 광소자 및 광필터에 적용 가능하리라 판단된다.

Te계 합금 박막의 Antireflection 구조와 광기록 특성 (Antireflection Structures and Optical Recording Properties of Te-based Alloy Thin Films)

  • 이현용;최대영;이영종;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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    • pp.74-77
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    • 1988
  • This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

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광기록을 위한 Te-based Antireflection구조의 열적, 광학적 특성 (The Thermal and Optical Properties of Te-based Antireflection structure for Optical Recording)

  • 이성준;이현용;정홍배;이영종
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1256-1258
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    • 1993
  • Optical data storage offer high density storage and archival storage capability. In this study, we selected the ablation mechanism-one of an irreversible recording system-using the antireflection trilayer(ART) structure. Optical recording medium is a $(Te_{86}Se_{14})_{50}Bi_{50}$ thin films. Actually, ART structure is fabricated and compared to monolayer structure. ART structure leads to the reduction of recording power as well as an increase in the effciency compared to the monolayer structure.

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DIAMOND-LIKE CARBON FILMS FOR ANTIREFLECTION COATINGS OF GERMANIUM INFRATED OPTICAL LENSES

  • Kim, Seong-Young;Lee, Sang-Hyun;Lee, Jai-Sung
    • 한국표면공학회지
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    • 제32권3호
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    • pp.461-466
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    • 1999
  • Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.

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Design of an Antireflection Coating for High-efficiency Superconducting Nanowire Single-photon Detectors

  • Choi, Jiman;Choi, Gahyun;Lee, Sun Kyung;Park, Kibog;Song, Woon;Lee, Dong-Hoon;Chong, Yonuk
    • Current Optics and Photonics
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    • 제5권4호
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    • pp.375-383
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    • 2021
  • We present a simulation method to design antireflection coating (ARCs) for fiber-coupled superconducting nanowire single-photon detectors. Using a finite-element method, the absorptance of the nanowire is calculated for a defined unit-cell structure consisting of a fiber, ARC layer, nanowire absorber, distributed Bragg reflector (DBR) mirror, and air gap. We develop a method to evaluate the uncertainty in absorptance due to the uncontrollable parameter of air-gap distance. The validity of the simulation method is tested by comparison to an experimental realization for a case of single-layer ARC, which results in good agreement. We show finally a double-layer ARC design optimized for a system detection efficiency of higher than 95%, with a reduced uncertainty due to the air-gap distance.