• Korean Journal of Materials Research
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• v.14 no.2
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• pp.152-156
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• 2004

We have studied the effective optical absorption power of Si solar cell with $SiO_2$-antireflection layer based on a mathematical modelling of AM(air mass)1 spectrum and Si refractive index in the wavelength range(0.4 $\mu\textrm{m}\leq$λ$\leq$$0.97\mu\textrm{m}$). The effective optical absorption power obtained from the theoretical calculation was 450 and 520 W/$\m^2$ for the Si solar cells with $SiO_2$-antireflection layer of 500$\AA$ and 1000$\AA$, respectively. The optimum thickness of $SiO_2$-antireflection layer showing the minimum reflection loss was about 1000$\AA$ in the computer simulation. Two kinds of Si solar cells named EBS(500$\AA$) and EBS(l000$\AA$) were fabricated to evaluate the effect of $SiO_2$-antireflection layer thickness on the optical absorption. The epitaxial base Si cell with $SiO_2$-antireflection layer of 1000$\AA$ [EBS(l000$\AA$)] showed the output power improvement of about 15% upon the EBS(500$\AA$) cell due to larger absorption of effective optical power under illumination of AM1, 1 sun.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.98-106
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• 1996

Antireflection (AR) coating has proven effective in providing substantial increase in solar cell efficiency. In this paper, we review the principles of antireflection coating, describe materials and methods of deposition used to provide antireflection coatings on solar cells.

• International journal of advanced smart convergence
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• v.11 no.2
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• pp.59-63
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• 2022

In this study, we study of luminescent solar concentrators comprise thick glass with broadband antireflection coating deposited on the top surfaces and inorganic phosphor layers contacted on the bottom surfaces. Solar cells are contacted to the lateral surfaces of the glass. Experimental results show the broadband antireflection coating increased the short-circuit current of the solar cell.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.623-623
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• 2008

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.9
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• pp.4139-4145
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• 2012

This paper shows an antireflection coating design skill for utilization the thin-film silicon solar cell in the future. The reflectivity of each index profile previously suggested as linear, cubic and quintic function has been calculated and compared. Each index profile is applied to the antireflection coating consisting of 6 layers with 180nm thickness. Also we suggest the graded index profile and compare it's reflectivity to the linear, cubic and quintic's ones. As a results we find the reflectivity generally decreases as the order goes to higher. However the reflectivity in the graded index profile shows the higher(lower) value than ones in the linear, cubic and quintic especially in the shorter(longer) wavelength range from 500 nm to below 700 nm(above 700 nm to 800 nm). Therefore we find that the graded index profile structure could be applied for the better antireflection coating design scheme especially for optical device and optical filter in the range of from deep red to infrared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.74-77
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• 1988

This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1256-1258
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• 1993

Optical data storage offer high density storage and archival storage capability. In this study, we selected the ablation mechanism-one of an irreversible recording system-using the antireflection trilayer(ART) structure. Optical recording medium is a $(Te_{86}Se_{14})_{50}Bi_{50}$ thin films. Actually, ART structure is fabricated and compared to monolayer structure. ART structure leads to the reduction of recording power as well as an increase in the effciency compared to the monolayer structure.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.461-466
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• 1999

Diamond-like carbon(DLC) films were directly deposited onto germanium(Ge) witness pieces and lenses by a capacitively coupled 13.56 MHz RF glow discharge plasma with $CH_4$ gas. The characterizations of DLC films were measured using a Raman and FTIR spectrometer. The configuration of Raman and FTIR spectra had a traditional shape. The IR transmittance was measured using an IR spectrophotometer. The maximum values of the IR transmission of Ge with the DLC/Ge/DLC, DLC/Ge/BBAR (broad band antireflection), DLC/Ge, and BBAR/Ge structures are 98%, 93%, 64%, and 63.5%, respectively, which come up to the theoretical values. The uniform DLC films were obtained by a rotation of the cathode at certain conditions.

• Current Optics and Photonics
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• v.5 no.4
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• pp.375-383
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• 2021

We present a simulation method to design antireflection coating (ARCs) for fiber-coupled superconducting nanowire single-photon detectors. Using a finite-element method, the absorptance of the nanowire is calculated for a defined unit-cell structure consisting of a fiber, ARC layer, nanowire absorber, distributed Bragg reflector (DBR) mirror, and air gap. We develop a method to evaluate the uncertainty in absorptance due to the uncontrollable parameter of air-gap distance. The validity of the simulation method is tested by comparison to an experimental realization for a case of single-layer ARC, which results in good agreement. We show finally a double-layer ARC design optimized for a system detection efficiency of higher than 95%, with a reduced uncertainty due to the air-gap distance.