• Journal of Korean Society on Water Environment
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• v.30 no.2
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• pp.199-205
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• 2014

The knowledge on the migration of antimony (Sb) from PET bottles into the water is of greate concern. Antimony in all bottled water marketed in korea and in raw water was analyzed. The detection rate of antimony in total bottled water was 88 % and 100% in PET (Polyethylene terephthalate, PET), 55% in PC (Polycarbonate, PC) bottled water. 55% of raw water contained antimony. The average concentration of Sb in PET bottled water was $0.39{\mu}g/L$, higher than PC bottles ($0.20{\mu}g/L$) and the raw water ($0.22{\mu}g/L$). The migration of Sb into water that is stored in different conditions (room temperature, $45^{\circ}C$, and direct sunlight exposure) was investigated for 180 days. The migration tendency increased with the storage time and temperature. PET bottles showed a sharp increase of Sb concentration at $45^{\circ}C$, but there was no differences between the room temperature and sunlight exposure. The Sb migration in all simulated solution(deionized water, 4% acetic acid, and 20% ethanol) also increased with storage time and temperature. The Sb migration values ranged from 0.35 to $0.49{\mu}g/L$ in all simulated solution, which was far below the permissible korean migration level of $40{\mu}g/L$. There was a tendency that the number of re-use of a bottle and the amount of leaching were in inverse proportion.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.478-481
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• 2010

Antimony doped tin oxide (ATO) nanoparticles were added as nanofillers to UV-curable polyester-acrylate (PEA) resin for coating to improve thermal, mechanical, and electrical properties. In this study, ATO nanoparticles were grafted by 3-glycidyloxypropyltrimethoxysilane and 3-methacryloxypropyltrimethoxysilane respectively to improve dispersion and interfacial adhesion. The physical properties and surface scratch hardness of the UV-curable nanocomposite coating were improved considerably by introducing the modified ATO nanoparticles.

• 대한예방의학회:학술대회논문집
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• 1995.10a
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• pp.359-360
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• 1995

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.55-59
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• 1993

In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

• Korean Journal of Materials Research
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• v.22 no.6
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.175-175
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• 2010

Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.814-820
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• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• The Korean Journal of Nuclear Medicine
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• v.27 no.2
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• pp.298-304
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• 1993

To estimate the bone marrow involvement of leukemia, we peformed scintigraphies using $^{99m}Tc$ antimony sulfide colloid and Gallium-67. Total 13 patients were included and obtained 14 study sets of $^{99m}Tc$ antimony sulfide colloid and gallium-67 and compared with bone marrow aspiration biopsy and clinicolaboratory datas. $^{99m}Tc$ Antimony scan showed localized defect in 4 patients who had relapse. No false positive or negative results were observed. Gallium 67 showed localized increased uptake in 2 of 4 relapsed patients. Therefore, bone marrow scan is useful for the evaluation of marrow infiltration in ieukemic patients.

• Journal of the Korean Ceramic Society
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• v.44 no.1 s.296
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• pp.1-5
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• 2007

Fining and homogenization of melts during batch melting is closely related to the redox reaction of polyvalent element M (M: Sb, As etc), $M^{(x+n)+}+n/2O^{2-}{\rightarrow}M^{x+}+n/4O_2$. In this study, square wave voltammetry (SWV) measurements were performed to examine the redox behavior of an antimony ion in cathode ray tube (CRT) glass melts. According to results, well-separated two peaks are shown at low temperature while only one peak is shown at high temperature in voltammograms, which reveals that redox reaction of antimony consist of two steps: $Sb^{5+}/Sb^{3+}\;and\;Sb^{3+}/Sb^0$, depending on the temperature. Based on the peak potential shown in the voltammogram, the thermodynamic data and the redox ratio for two redox couple were determined.