• Title/Summary/Keyword: Antimony

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Quantitative analysis of formation of oxide phases between SiO2 and InSb

  • Lee, Jae-Yel;Park, Se-Hun;Kim, Jung-Sub;Yang, Chang-Jae;Kim, Su-Jin;Seok, Chul-Kyun;Park, Jin-Sub;Yoon, Eui-Joon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.162-162
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    • 2010
  • InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

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Antimony Content of Natural Mineral Water in Korean Market and Migration into Water from Bottle Material (국내유통 먹는샘물 중의 안티몬 함량 및 용기 이행 특성)

  • Huh, Yujeong;Yang, Mihee;Cho, Yangseok;Ahn, Kyunghee;Lee, Younhee;Chung, Hyunmee;Kwon, Ohsang;Park, Juhyun
    • Journal of Korean Society on Water Environment
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    • v.30 no.2
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    • pp.199-205
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    • 2014
  • The knowledge on the migration of antimony (Sb) from PET bottles into the water is of greate concern. Antimony in all bottled water marketed in korea and in raw water was analyzed. The detection rate of antimony in total bottled water was 88 % and 100% in PET (Polyethylene terephthalate, PET), 55% in PC (Polycarbonate, PC) bottled water. 55% of raw water contained antimony. The average concentration of Sb in PET bottled water was $0.39{\mu}g/L$, higher than PC bottles ($0.20{\mu}g/L$) and the raw water ($0.22{\mu}g/L$). The migration of Sb into water that is stored in different conditions (room temperature, $45^{\circ}C$, and direct sunlight exposure) was investigated for 180 days. The migration tendency increased with the storage time and temperature. PET bottles showed a sharp increase of Sb concentration at $45^{\circ}C$, but there was no differences between the room temperature and sunlight exposure. The Sb migration in all simulated solution(deionized water, 4% acetic acid, and 20% ethanol) also increased with storage time and temperature. The Sb migration values ranged from 0.35 to $0.49{\mu}g/L$ in all simulated solution, which was far below the permissible korean migration level of $40{\mu}g/L$. There was a tendency that the number of re-use of a bottle and the amount of leaching were in inverse proportion.

UV-curable polyester-acrylate coating with antimony doped tin oxide nanoparticles

  • Sung, Si-Hyun;Kim, Dae-Su
    • Proceedings of the KAIS Fall Conference
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    • 2010.11a
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    • pp.478-481
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    • 2010
  • Antimony doped tin oxide (ATO) nanoparticles were added as nanofillers to UV-curable polyester-acrylate (PEA) resin for coating to improve thermal, mechanical, and electrical properties. In this study, ATO nanoparticles were grafted by 3-glycidyloxypropyltrimethoxysilane and 3-methacryloxypropyltrimethoxysilane respectively to improve dispersion and interfacial adhesion. The physical properties and surface scratch hardness of the UV-curable nanocomposite coating were improved considerably by introducing the modified ATO nanoparticles.

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Polycrystalline silicon doping using antimony thin film as doping source (안티몬 박막을 도우핑소스로 찬 다결정실리콘 도우핑)

  • 이인찬;마대영;김상현;김영진;김기완
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.55-59
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    • 1993
  • In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.

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Effect of Sintering Temperature on the Thermoelectric Properties of Bismuth Antimony Telluride Prepared by Spark Plasma Sintering (방전플라즈마 소결법으로 제조된 Bismuth Antimony Telluride의 소결온도에 따른 열전특성)

  • Lee, Kyoung-Seok;Seo, Sung-Ho;Jin, Sang-Hyun;Yoo, Bong-Young;Jeong, Young-Keun
    • Korean Journal of Materials Research
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    • v.22 no.6
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    • pp.280-284
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    • 2012
  • Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

Effect of process parameters of antimony doped tin oxide films prepared on flexible substrate at room temperature

  • Lee, Seong-Uk;Hong, Byeong-Yu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.175-175
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    • 2010
  • Transparent conducting oxide (TCO) films are widely used as transparent conducting thin film material for application in various fields such as solar cells, optoelectronic devices, heat mirrors and gas sensors, etc. Recently the increased utilization of many transparent electrodes has accelerated the development of inexpensive TCO materials. Indium tin oxide (ITO) film is well-known for TCO materials because of its low resistivity, but there is disadvantage that it is too expensive. ZnO film is cheaper than ITO but it shows thermally poor stability. On the contrary, antimony-doped tin oxide films (ATO) are more stable than TCO films such as Al-doped zinc oxide (AZO) and ITO. Moreover, SnO2 film shows the best thermal and chemical stability, low cost and mechanical durability except the poor conductivity. However, annealing is proved to improve the conductivity of ATO film. Therefore, in this work, antimony (6 wt%) doped tin oxide films to improve the conductivity were deposited on 7059 corning glass by RF magnetron sputtering method for the application to transparent electrodes. In general, of all TCO films, glass is the most commonly selected substrate. However, for future development in flexible devices, glass is limited by its intrinsic inflexibility. In this study, we report the growth and properties of antimony doped tin oxide (ATO) films deposited on PES flexible substrate by using RF magnetron sputtering. The optimization process was performed varying the sputtering parameters, such as RF power and working pressure, and parameter effect on the structural, electrical and optical properties of the ATO films were investigated.

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Effect of Annealing under Antimony Ambient on Structural Recovery of Plasma-damaged InSb(100) Surface

  • Seok, Cheol-Gyun;Choe, Min-Gyeong;Jeong, Jin-Uk;Park, Se-Hun;Park, Yong-Jo;Yang, In-Sang;Yun, Ui-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.203-203
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    • 2014
  • Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

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Realization of p-type Conduction in Antimony Doped ZnO Thin Films by PLD (PLD를 이용한 Antimony가 도핑된 p 형 ZnO 박막의 구현)

  • Bae, Ki-Ryeol;Lee, Dong-Wook;Elanchezhiyan, J.;Lee, Won-Jae;Bae, Yun-Mi;Shin, Byoung-Chul;Kim, Il-Soo;Shan, F.K.
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.814-820
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    • 2009
  • Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

Evaluation of Bone Marrow Involvement in Leukemic Patients using Bone Marrow Scan (백혈병 환자에서 골수주사를 이용한 골수침범 유무의 평가)

  • Cho, Jae-Hyun;Kim, Myoung-Joon;Lee, Jong-Doo;Park, Chang-Yoon;Kim, Kill-Young;Kim, Yong-Soo
    • The Korean Journal of Nuclear Medicine
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    • v.27 no.2
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    • pp.298-304
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    • 1993
  • To estimate the bone marrow involvement of leukemia, we peformed scintigraphies using $^{99m}Tc$ antimony sulfide colloid and Gallium-67. Total 13 patients were included and obtained 14 study sets of $^{99m}Tc$ antimony sulfide colloid and gallium-67 and compared with bone marrow aspiration biopsy and clinicolaboratory datas. $^{99m}Tc$ Antimony scan showed localized defect in 4 patients who had relapse. No false positive or negative results were observed. Gallium 67 showed localized increased uptake in 2 of 4 relapsed patients. Therefore, bone marrow scan is useful for the evaluation of marrow infiltration in ieukemic patients.

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