• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.369-372
• /
• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.

• Korean Journal of Metals and Materials
• /
• v.47 no.4
• /
• pp.228-234
• /
• 2009

It is well known that the formation of $SiO_2$, $Al_2O_3$ and/or other oxides at the steel surface during the annealing process deteriorates the surface quality of galvanized steels. It is important to minimize oxide formation during the annealing process for the superior surface quality of galvanized steels. In order to minimize the oxide formation on the steel surface, antimony was chosen as an alloying element to the commercial steels. Then, the effect of alloying element on the oxidation behavior was investigated. A small amount of antimony was added to two types of steels, one with 0.1% C, 1.0% Si, 1.5% Mn, 0.08% P, and the other with 0.002% C, 0.001% Si, 0.104% Mn, 0.01% P. Then, the oxidation behavior was investigated from $650{\sim}900^{\circ}C$ in the air. The addition of antimony to the steels retarded the outward diffusion of elements during the oxidation, resulting in reduction of the oxidation rate.

• Nuclear Engineering and Technology
• /
• v.54 no.2
• /
• pp.627-636
• /
• 2022

In nuclear power plants and other nuclear facilities the removal of cobalt from radioactive liquid waste is needed to reduce the radioactivity concentration in effluents. In liquid wastes containing strong organic complexing agents such as EDTA cobalt removal can be problematic due to the high stability of the Co-EDTA complex. In this study, the removal of cobalt from NaNO₃ solutions using antimony oxide (Sb₂O₃) synthesized from potassium hexahydroxoantimonate was investigated in the absence and presence of EDTA. The uptake studies on the ion exchange material were conducted both in the dark (absence of UV-light) and under UV-C irradiation. Ca²⁺ or Ni²⁺ were included in the experiments as competing cations to test the selectivity of the ion exchanger. Results show that UV-C irradiation noticeably enhances the cobalt sorption efficiency on the antimony oxide. It was shown that nickel decreased the sorption of cobalt to a higher extent than calcium. Finally, the sorption data collected for Co²⁺ on antimony oxide was modeled using six different isotherm models. The Sips model was found to be the most suitable model to describe the sorption process. The Dubinin-Radushkevich model was further used to calculate the adsorption energy, which was found to be 6.2 kJ mol^-1.

• Journal of the Korean Electrochemical Society
• /
• v.23 no.1
• /
• pp.18-23
• /
• 2020

Antimony telluride (Sb_xTe_y) thin films were synthesized by an electrodeposition method with a control of applied potential at room temperature. Characterization of electrical and thermoelectric properties such as conductivity, Seebeck coefficient, and power factor (P.F.) were conducted as a function of the chemical composition of the electrodeposited films. Morphology of thin films were dense and uniform and the composition was tailored from 25 to 60 at.% of the Sb content by altering the applied potential from -0.13 to -0.27 V (vs. SCE). The conductivity of the films were ranged from 2 × 10^-4 ~ 5 × 10^-1 S/cm indicating their amorphous behavior. The meaured Seebeck coefficient of films were relatively high compared to that of bulk single cyrstal Sb_xTe_y due to their low carrier concentration. The variation of the Seebeck coefficient of the films was also related to the change of chemical composition, showing the power factor of ~10 ㎼/mK².

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.282-282
• /
• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.1
• /
• pp.5-9
• /
• 2015

Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.56.2-56.2
• /
• 2010

An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.

• Journal of the Semiconductor & Display Technology
• /
• v.16 no.2
• /
• pp.39-43
• /
• 2017

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 2000.11a
• /
• pp.90-99
• /
• 2000

This report describes the results of analysis, synthesis and evaluation of antimony dithiocarbamates (SbDTC). Sb-DTC were synthesized by reacting antimony oxide with dithiocarbamates whish were prepared by reaction of dialkylamines and carbon disulfide. The chemical structures and properties of synthesized Sb-DTCs in lab. were discussed. The frictional properties of SbDTC were tested with Four-Ball Wear Scar Tester and Four-Ball Extreme Tester by ASTM method.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.162-162
• /
• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.