• 한국식품영양학회지
• /
• 제34권5호
• /
• pp.553-559
• /
• 2021

The aim of study to investigate the phytochemicals and biological activities the bark of Betula schmidtii. The studies consisted of the solvent extraction, followed by the isolation of phenolic components 1~3 from ethyl acetate-soluble fraction of Betula schmidtii Bark. Their chemical structures were identified as arbutin (1), ρ-coumaric acid (2) and ferulic acid (3) using Ultraviolet-Visible (UV-Vis) Spectrophotometer, Electrospray Ionization Mass Spectrometry (ESI-MS) (negative ion mode), ¹H-Nuclear Magnetic Resonance (NMR), ¹³C-NMR, ¹H-¹H Correlation Spectroscopy (COSY) and ¹H-¹³C Hetero Nuclear Multiple Quantum Correlation (HMQC) spectral data. Compounds 1~3 shows the anti-oxidant effect with IC₅₀ values of 29.74±1.52, 21.32±1.07 and 34.41±1.24 in 1,1-diphenyl-2-picrylhydrazyl (DPPH) free radical scavenging activity, respectively. Also, compounds 1~3 exhibited mushroom tyrosinase inhibitory activity with IC₅₀ values of 31.14±1.07, 42.54±1.46 and 69.22±1.43 µM, respectively.

• 약학회지
• /
• 제32권1호
• /
• pp.80-85
• /
• 1988

QSAR of Salicylic acid derivatives, as anti-inflammatory agent, classified into Group I (not-having-5-phenyl ones) and Group II (having-5-phenyl ones) were investigated by quantum chemical calculations. The results are below: not significant statistically for both of Group I and Group II, but significant for each Group. $potency=-8.46X_{5}+1.639\;n=5\;r=0.77\;se=0.31\;for\;Group\;I.$ $({\pm}4.05)\;({\pm}0.5)$ where $X_5$ means charge of carbon atom bonded to hydroxyl radical. $potency=0.16X_{19}+7427.38HO-6629.85X_{15}+4977.40X_{10}+351.51X_5+3378.84$ $({\pm}0.17)\;({\pm}10.18)\;({\pm}11.70)\;({\pm}33.78)\;({\pm}4.41)\;({\pm}13.13)$ n=7 r=0.99 se=0.019 for Group II. where $X_{19}$ and $X_{15}$ stand for charges of the para carbon and the first carbon atoms in phenyl radical, respectively and $X_{10}$, charge of carboxylic carbon atom, HO, HOMO energy. It seems to be possible to qualitatively predict potency of drug by Pearson's HSAB theory. It means that drug should possess low LUMO energy and high HOMO energy.

• Bulletin of the Korean Chemical Society
• /
• 제24권7호
• /
• pp.961-966
• /
• 2003

A quantum-chemical study of conformations and electronic structures of polyheterocyclic derivatives with vinylenediheteroatom substituents at the 3- and 4-positions was performed to search for novel blue-lightemitting conjugated polymers. Conformational potential energy curves of the polymers were constructed as a function of the helical angle (a) through semiempirical Hartree-Fock band calculations at the Austin model 1 level. It is found that poly(3,4-vinylenedioxythiophene) possesses a quite flat curve in the range of α = 51.4°- 120°. Replacing S atoms for O atoms greatly increases repulsion between the neighboring units, and thereby the units become perpendicular to one another. Because of the hydrogen bonding between O and NH, poly(3,4- vinylenedioxypyrrole) is predicted to be anti-coplanar and poly(3,4-vinylenediaminofuran) to be nearly anticoplanar. According to the modified extended Huckel band calculations, the HOMO-LUMO gaps (HLGs) of the polymers, unless the polymer chains are twisted, are close to or slightly smaller than those of their respective mother polymers. Among the polymers, poly(3,4-vinylenedioxythiophene) is presumed to be the most probable candidate for a blue-light emitter because its HLG is within the range of the electronic requirement for blue-light emitters.

• 전자공학회논문지D
• /
• 제36D권7호
• /
• pp.66-79
• /
• 1999

본 논문에서는 얕은 양자 우물(extremely shaliow quantum wells, ESQWs)을 사용한 광 쌍안정 대칭형 자기 전광 소자(symmetric self elctrooptic effect device, S-SEED)의 성능에 있어서 높은 입사 광전력의 영향을 조사한다 . 다음과 같은 네 가지 ESQWs S-SEED 구조를 고려하였다. 무 반사 입힘(AR-coated) ESQWs S-SEED, back-to-back ARcoated ESQWs S-SEED, 비대칭 공명구조(AFP) ESQWs S-SEED, back-toback AFP ESQWs S-SEED. 입사 광 전력이 증가함에 따라 On/Off 대조비, On/Off 반사율 차이와 같은 소자성능은 ohmic heating 과 여기자 포화(exciton saturation)의 영향으로 심각하지 않게 저하된다. 한편 소자의 스위칭 속도는 지속적으로 증가하다가 특정 입사 광 전력 하에서 점차 감소하기 시작한다. 직렬 광 연결 시스템(cascading optical interconnection system)에 있어서 소자의 최대 속도 스위칭 동작을 위한 최대 입사 광 전력의 최적화를 바탕으로 0 V와 5 V의 외부 전압 조건에서 양자우물의 수를 변화시키면서 $5{\times}5{\mu}m^2$의 mesa 영역에 대하여 네 가지 ESQWs S-SEED의 시스템 비트 레이트를 모의 실험하고 그 결과를 분석하였다.

• 한국지반공학회논문집
• /
• 제29권7호
• /
• pp.5-15
• /
• 2013

노후화된 터널에서 배수공의 막힘현상은 중요한 문제점으로 대두되며, 장기적으로는 배수시스템에 폐색현상을 일으킨다. 배수시스템에서의 침전물 방지를 위한 요소기술 검증을 위해 본 연구에서는 도로터널의 토사층 및 라이닝을 모사하여 배수공의 유출수에서의 침전현상을 살펴보았다. 또한 기존의 배수공들은 대부분$5^{\circ}$ 이하로 설치되었기 때문에 배수공의 기울기를 변화시켜가며 시험하였다. 배수공의 기울기를 $2^{\circ}$로 한 경우에는 퀀텀스틱은 스케일의 생성을 방지하는 데 효과가 있었으나 자화장치는 효과가 없는 것으로 나타났다. 배수공의 기울기를 $5^{\circ}$로 한 경우에는 퀀텀스틱과 자화장치 모두 배수공내 스케일의 생성을 방지하는 데 효과가 있었으나, 특히 퀀텀스틱이 자화장치보다 더욱 효과가 있는 것으로 나타났다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제17권4호
• /
• pp.483-491
• /
• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• 전자공학회논문지A
• /
• 제32A권11호
• /
• pp.29-34
• /
• 1995

Mirror coating is applied to laser facets to improve properties of edge emitting laser diodes. In this experiment, InGaAsP/GaAs high power laser diodes were studied with respect to different degrees of anti-reflective coating. Sputterred $Al_{2}$O$_{3}$ was used as the coating material and the HR coating was kept constant at 90%. Threshold current density, differential quantum efficiency, emission wavelength and the operating current at 500mW were measured for a range of AR coating and compared with theoretically calculated values; that showed good agreements. Precise wavelength control is important for laser diodes for solid state pumping because of small absorption bandwidth. In addition, since these lasers operate under CW condition, a lowest possible operating current for a given power is desired in order to minimize the heat produced. From the results of this experiment, we were able to obtain a optimum range of AR coatings for minimum operating current. The wavelength can be varied up to 4nm within this range.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.112.1-112.1
• /
• 2011

The back contact solar cell (BCSC) has several advantages compared to the conventional solar cell since it can reduce grid shadowing loss and contact resistance between the electrode and the silicon substrate. This paper presents the effect of the surface texturing of the silicon BCSC by varying the texturing depth or the texturing gap in the commercially available simulation software, ATHENA and ATLAS of the company SILVACO. The texturing depth was varied from $5{\mu}m$ to $150{\mu}m$ and the texturing gap was varied from $1{\mu}m$ to $100{\mu}m$ in the simulation. The resulting efficiency of the silicon BCSC was evaluated depending on the texturing condition. The quantum efficiency and the I-V curve of the designed silicon BCSC was also obtained for the analysis since they are closely related with the solar cell efficiency. Other parameters of the simulated silicon BCSC are as follows. The substrate was an n-type silicon, which was doped with phosphorous at $6{\times}10^{15}cm^{-3}$, and its thickness was $180{\mu}m$, a typical thickness of commercial solar cell substrate thickness. The back surface field (BSF) was $1{\times}10^{20}\;cm^{-3}$ and the doping concentration of a boron doped emitter was $8.5{\times}10^{19}\;cm^{-3}$. The pitch of the silicon BCSC was $1250{\mu}m$ and the anti-reflection coating (ARC) SiN thickness was $0.079{\mu}m$. It was assumed that the texturing was anisotropic etching of crystalline silicon, resulting in texturing angle of 54.7 degrees. The best efficiency was 25.6264% when texturing depth was $50{\mu}m$ with zero texturing gap in case of low texturing depth (< $100{\mu}m$).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.394-394
• /
• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• 한국표면공학회지
• /
• 제49권3호
• /
• pp.301-306
• /
• 2016

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.