• 제목/요약/키워드: Anodic aluminum oxide substrate

검색결과 29건 처리시간 0.02초

스퍼터링을 통하여 다공성 양극산화 알루미늄 기판에 증착되는 니켈 박막의 기공 크기 조절 (Control of the Pore Size of Sputtered Nickel Thin Films Supported on an Anodic Aluminum Oxide Substrate)

  • 지상훈;장춘만;정우철
    • 한국수소및신에너지학회논문집
    • /
    • 제29권5호
    • /
    • pp.434-441
    • /
    • 2018
  • The pore size of nickel (Ni) bottom electrode layer (BEL) for low-temperature solid oxide fuel cells embedded with ultrathin-film electrolyte was controlled by changing the substrate surface morphology and deposition process parameters. For ~150-nm-thick Ni BEL, the upper side of an anodic aluminum oxide (AAO) substrate with ~65-nm-sized pores provided ~1.7 times smaller pore size than the lower side of the AAO substrate. For ~100-nm-thick Ni BEL, the AAO substrate with ~45-nm-sized pores provided ~2.6 times smaller pore size than the AAO substrate with ~95-nm-sized pores, and the deposition pressure of ~4 mTorr provided ~1.3 times smaller pore size than that of ~48 mTorr. On the AAO substrate with ~65-nm-sized pores, the Ni BEL deposited for 400 seconds had ~2 times smaller pore size than the Ni BEL deposited for 100 seconds.

실리콘 및 사파이어 기판을 이용한 알루미늄의 양극산화 공정에 관한 연구 (Fabrication of Anodic Aluminum Oxide on Si and Sapphire Substrate)

  • 김문자;이진승;유지범
    • 한국재료학회지
    • /
    • 제14권2호
    • /
    • pp.133-140
    • /
    • 2004
  • We carried out anodic aluminum oxide (AAO) on a Si and a sapphire substrate. For anodic oxidation of Al two types of specimens prepared were Al(0.5 $\mu\textrm{m}$)!Si and Al(0.5 $\mu\textrm{m}$)/Ti(0.1 $\mu\textrm{m}$)$SiO_2$(0.1 $\mu\textrm{m}$)/GaN(2 $\mu\textrm{m}$)/Sapphire. Surface morphology of Al film was analyzed depending on the deposition methods such as sputtering, thermal evaporation, and electron beam evaporation. Without conventional electron lithography, we obtained ordered nano-pattern of porous alumina by in- situ process. Electropolishing of Al layer was carried out to improve the surface morphology and evaluated. Two step anodizing was adopted for ordered regular array of AAO formation. The applied electric voltage was 40 V and oxalic acid was used as an electrolyte. The reference electrode was graphite. Through the optimization of process parameters such as electrolyte concentration, temperature, and process time, a regular array of AAO was formed on Si and sapphire substrate. In case of Si substrate the diameter of pore and distance between pores was 50 and 100 nm, respectively. In case of sapphire substrate, the diameter of pore and distance between pores was 40 and 80 nm, respectively

Bendable ac-PDP using Fence-Structured Electrodes on Polyethylene Terephthalate Substrate

  • Choi, Won-Yeol;Hong, Cho-Rong;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
    • /
    • pp.593-596
    • /
    • 2007
  • A possibility of manufacturing bendable ac-PDP using aluminum electrode with anodic aluminum oxide dielectric material system on PET film substrate was explored. For this structure, PET film with fence-structured aluminum electrodes was used for front plate and PET film with barrier ribs of UV curable resin for the rear plate. The results demonstrate that it is feasible to manufacture the bendable ac-PDPs using those material system and are expected to expand the applications of plasma display panels.

  • PDF

알루미늄 양극산화를 사용한 DRAM 패키지 기판 (DRAM Package Substrate Using Aluminum Anodization)

  • 김문정
    • 대한전자공학회논문지SD
    • /
    • 제47권4호
    • /
    • pp.69-74
    • /
    • 2010
  • 알루미늄 양극산화(aluminum anodization)의 선택적인 적용을 통하여 DRAM 소자를 위한 새로운 패키지 기판을 제작하였다. 에폭시 계열의 코어(core)와 구리의 적층 형태로 제작되는 일반적인 패키지 기판과는 달리 제안된 패키지 기판은 아래층 알루미늄(aluminum), 중간층 알루미나(alumina, $Al_2O_3$) 그리고 위층 구리(copper)로 구성된다. 알루미늄 기판에 양극산화 공정을 수행함으로써 두꺼운 알루미나를 얻을 수 있으며 이를 패키지 기판의 유전체로 사용할 수 있다. 알루미나층 위에 구리 패턴을 배치함으로써 새로운 2층 금속 구조의 패키지 기판을 완성하게 된다. 또한 알루미늄 양극산화를 선택적인 영역에만 적용하여 내부가 완전히 채워져 있는 비아(via) 구조를 구현할 수 있다. 패키지 설계 시에 비아 인 패드(via in pad) 구조를 적용하여 본딩 패드(bonding pad) 및 볼 패드(ball pad) 상에 비아를 배치하였다. 상기 비아 인 패드 배치 및 2층 금속 구조로 인해 패키지 기판의 배선 설계가 보다 수월해지고 설계 자유도가 향상된다. 새로운 패키지 기판의 주요 설계인자를 분석하고 최적화하기 위하여 테스트 패턴의 2차원 전자기장 시뮬레이션 및 S-파라미터 측정을 진행하였다. 이러한 설계인자를 바탕으로 모든 신호 배선은 우수한 신호 전송을 얻기 위해서 $50{\Omega}$의 특성 임피던스를 가지는 coplanar waveguide(CPW) 및 microstrip 기반의 전송선 구조로 설계되었다. 본 논문에서는 패키지 기판 구조, 설계 방식, 제작 공정 및 측정 등을 포함하여 양극산화 알루미늄 패키지 기판의 특성과 성능을 분석하였다.

비정질 실리콘 박막 태양전지 효율 향상을 위한 양극산화 알루미늄 템플레이트을 이용한 플라즈모닉 금 나노점 배열 최적화 (Plasmonic gold nanodot array optimization on a-Si thin film solar cells using anodic aluminum oxide templates)

  • 배규영;김경식
    • 정보저장시스템학회논문집
    • /
    • 제9권2호
    • /
    • pp.67-71
    • /
    • 2013
  • The fabrication method of plasmonic nanodots on silicon substrate has been developed to improve the efficiency of thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of gold nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of a-Si thin film solar cells. It is found that optical properties of the thin film solar cells are improved by finding optimization values of the structural parameters of the gold nanodot array.

알루미늄 양극산화 피막의 상전이에 미치는 수화처리의 영향 (Effects of Hydration Treatments on the Phase Transition of Anodic Aluminum Oxide Layers)

  • 주은균;김성수;오한준;조수행;지충수
    • 한국재료학회지
    • /
    • 제12권7호
    • /
    • pp.540-544
    • /
    • 2002
  • Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.

원자현미경에서 나노허니컴 구조물의 홀 사이즈에 따른 점착 및 마찰 거동 분석 (Pore size effects of adhesion and friction for nanohoneycomb structures in AFM)

  • 최덕현;이평수;이건홍;박현철;황운봉
    • 한국복합재료학회:학술대회논문집
    • /
    • 한국복합재료학회 2005년도 추계학술발표대회 논문집
    • /
    • pp.129-132
    • /
    • 2005
  • This study analyzes the behavior of adhesion and friction according to the pore size of nanohoneycomb structures in atomic force microscope (AFM). Anodic aluminum oxide (AAO) films are fabricated as nanohoneycomb structures. According to the pore diameters of the nanohoneycomb structures, the adhesive forces and the frictional coefficients arc obtained in AFM, and the behaviors are analyzed in the view of the contact area between the sphere particle and nanohoneycomb substrate. The effective Young's moduli of the nanohoneycomb structures are measured from the nanoindentation tests, and the contact areas at zero applied load are calculated by combining the porosity of the nanohoneycomb structures and the contact radius determined from JKR and DMT theory.

  • PDF

Uniform Field Emission from Carbon Nanotubes Fabricated by CO Disproportionation

  • Lee, Jin-Seung;Suh, Jung-Sang
    • Bulletin of the Korean Chemical Society
    • /
    • 제24권12호
    • /
    • pp.1827-1831
    • /
    • 2003
  • Field emission of carbon nanotubes (CNTs) fabricated by disproportionation of CO has been studied. CNTs fabricated on well-ordered Co nanowire arrays formed on the porous anodic aluminum oxide templates were well graphitized, uniform in diameter and aligned vertically with respect to the plane of the template, and showed a good field emission property. Very uniform emissions were observed from the CNTs fabricated at relatively low temperature, $500-600^{\circ}C$. Low fabrication temperature such as $500^{\circ}C$ could make it possible to fabricate CNTs on soda lime glass, a low-cost substrate, for display panel.

고분자 공중합체와 알루미늄 양극 산화막 템플레이트를 이용한 나노점 배열 형성 (Fabrication of Nanodot Arrays Via Pulsed Laser Deposition Technique Using (PS-b-PMMA) Diblock Copolymer and Anodic Aluminum Oxide Templates)

  • 박성찬;배창현;박승민;하정숙
    • 한국진공학회지
    • /
    • 제15권4호
    • /
    • pp.427-433
    • /
    • 2006
  • 자발적인 미세상 분리에 의해 실린더형의 규칙적인 배열을 형성하는 고분자 공중합체와 알루미늄의 양극산화에 의해 실린더형 기공 배열이 형성되는 알루미나 템플레이트를 이용하여 다양한 물질의 나노점 배열을 형성하였다. 펄스형 레이저 기상 증착법을 이용하여 은, 니켈, 산화아연, 실리콘, 코발트 / 백금 나노점 배열을 얻었는데, 나노점의 크기와 배열은 템플레이트의 기공 크기와 배열을 보여주었다. 이러한 템플레이트 기법을 이용하면 나노점의 밀도는 고 분자 공중합체와 알루미나의 경우 각각 $6{\times}10^{11}/cm^2$$1{\times}10^{10}/cm^2$ 이다. 이중 에르븀이 도핑된 실리콘 나노점과 ZnO 나노점 배열은 PL 측정을 통하여 물질의 광학성질에 관해 알아보았다. 에르븀이 도핑된 실리콘 나노점 배열은 $1.54{\mu}m$에서 강한 빛을 내며 ZnO 나노점 배열은 380 nm 에서 강한 PL 세기를 나타낸다.