• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1971-1973
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• 2005

We fabricated an alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. The nano-sized pores with diameter of $60{\sim}120nm$ was obtained by $40{\sim}80$ voltage. The pore widening process was employed for obtaining the flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano- structure.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1047-1052
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• 1998

The porous alumina membrane was prepared from aluminum metal(99.8%) by anodic oxidation using DC power supply of constant current mode in aqueous solution of sulfuric, oxalic, phosphoric and chromic acid. Pore size and distribution, membrane thickness, morphology and crystal structure were examined with several anodizing conditions : reaction temperature, electrolyte concentration, current density and electrolyte type. It was found that ultrafiltration membrane was fabricated in electrolyte of sulfuric, and oxalic acid. On the other hand, microfiltration membrane was fabricated in electrolyte of phosphoric, and chromic acid. Also, it was shown that crystal structure of porous alumina membrane prepared in sulfuric, oxalic, and phosphoric acid was amorphous, whereas porous alumina membrane prepared in chromic acid had ${\gamma}$ type of crystal structure.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.133-134
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• 2007

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.244-249
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• 2007

The properties of anodized films on aluminum 6061 alloy in single electrolyte of sulfuric acid and mixed electrolyte of sulfuric-boric acid and sulfuric-boric-nitric acid have been studied. Polarization tests in NaC solution were used to investigate the corrosion performance. Characteristics of film formation and surface morphology were examined by optical microscopy, FE-SEM and EDS. The results obtained have indicated that oxide films growth have been promoted by nitric acid and anodized films in mixed electrolyte have superior corrosion resistance. In case of anodic films formed in mixed electrolyte, some grooves and numerous crazings were also observed at the surface.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.440-443
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• 1999

The morphology and composition of anodic films, formed on aluminium at various current densities, in the range 1-$100{\;}Am^{-2}$, in the molten bisulphate melt at different temperatures (418-498K), have been studied using transmission electron microscopy of ultramicrotomed film sections, and ion beam thinned films. From the structural analysis of the electron diffraction patterns taken from the ultramicrotomed sections and ion beam thinned films, it can be concluded that the crystal modification process from ${\gamma}-Al_2O_3{\;}to{\;}{\alpha}-Al_2O_3$ proceeds in the following steps : (equation omitted)

• Journal of the Korean institute of surface engineering
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• v.51 no.6
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• pp.393-399
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• 2018

Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

• Journal of the Korea Convergence Society
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• v.7 no.5
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• pp.169-173
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• 2016

Anodic oxidation of aluminum has a sulfuric acid method and a oxalic acid method. Sulfuric acid concentration of the sulfuric acid method is 15~20 wt%. In the case of soft anodizing used in the $20{\sim}30^{\circ}C$ range, and voltage is the most used within a DC voltage 13~15V. In the case of hard anodizing used in the $0{\sim}-5^{\circ}C$ range. An aluminum oxide layer is made using sulfuric acid and oxalic acid. In this study, thermal fatigue of aluminum oxide layer which is made using sulfuric acid and oxalic acid is compared. Crack generating temperature of a sulfuric acid method and a oxalic acid method is $500^{\circ}C$ and $600^{\circ}C$. Thermal fatigue of aluminum oxide layer which is made using oxalic acid is better than thermal fatigue of aluminum oxide layer which is made using sulfuric acid. The characteristic of thermal fatigue can be explained by using thermal expansion coefficient of Al and Al2O3 and manufacturing temperature on Al anodizing. It was made possible through the convergent study to propose the manufacturing method of the anodic oxidation product used at a high temperature.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.5
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• pp.420-425
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• 2008

PMMA light guiding plate with nano-sized pattern was fabricated using anodized aluminum oxide membrane as a template for nano imprint lithography. Nano-sized pore arrays were prepared by the self-organization processes of the anodic oxidation using the aluminum plate with 99.999% purity. Since the aluminum plate has a rough surface, the aluminum plate with thickness of 1mm was anodized after the pre-treatments of chemical polishing, and electrochemical polishing. The surface morphology of the alumina obtained by the first anodization process was controlled by the concentration of electrochemical solution during the first anodization. The surface morphology of the alumina was also changed according to temperature of the solution during chemical polishing performed after first anodization. The pore widening process was employed for obtaining the one-channel with flat surface and height of the channel because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. It is shown from SPM results that the nano-sized pattern on PMMA light guiding plate fabricated by nano imprint lithography method was well transferred from that of anodized aluminum oxide template.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.396-396
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• 2007

Highly ordered pore structures as a template for formation of seeds have been prepared by the self-organization process of aluminum oxidation. The a-Si films were deposited on the anodic alumina films and crystallized by laser irradiation. It was found that un-melted part of fine poly-Si grain formed by explosive crystallization (EX) lead super lateral growth(SLG) and occluded with neighbor grains. The crystallized grains along the distribution of seeds were obtained. This results show a great potential for use in novel crystallization for decently uniform polycrystalline Si thin film transistors (poly-Si TFTs).

• Corrosion Science and Technology
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• v.14 no.3
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• pp.140-146
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• 2015

The commercialization of aluminum had been delayed than other metals because of its high oxygen affinity. Anodizing is a process in which oxide film is formed on the surface of a valve metal in an electrolyte solution by anodic oxidation reaction. Aluminum has thin oxide film on surface but the oxide film is inhomogeneous having a thickness only in the range of several nanometers. Anodizing process increases the thickness of the oxide film significantly. In this study, porous type oxide film was produced on the surface of aluminum in sulfuric acid as a function of electrolyte temperature, and the optimum condition were determined for anodizing film to exhibit excellent cavitation resistance in seawater environment. The result revealed that the oxide film formed at $10^{\circ}C$ represented the highest cavitation resistance, while the oxide film formed at $15^{\circ}C$ showed the lowest resistance to cavitation in spite of its high hardness.