• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.248-255
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• 2012

AlN thin films containing various amounts of Co, AlN-Co, and Al-Co alloy particles were prepared using a two-facing-target type dc reactive sputtering (TFTS) system. The as-deposited films exhibited the variable nature expected from an AlN-rich phase, and an amorphous-like phase, depending on the Co content in the films. Specific favorable microstructures were prepared by optimizing annealing conditions. Those microstructures and their magnetic properties and resistivity were investigated. As-deposited films showed very small saturation magnetization and an amorphous-like structure. However, when annealed, the as-deposited amorphous-like phase decomposes into phases of AlN, Co and Al-Co. These annealing induced changes in the microstructure improve the magnetization and resistivity of the films. Further improvement of soft magnetic properties could lead to the material being used for high density magnetic recording head material.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.196-198
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• 1996

The manufacturing process of the amorphous transformer core consists of winding, cutting, forming, annealing. Clamping of cores during this process are required for shape forming. Clamping of cores enhances the space factor, but degrades the magnetic properties and core loss characteristics of the cores. In this study, we investigated the optimal clamping pressure required in magnetic field annealing of 5 kVA amorphous transformer core.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.4
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• pp.379-384
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• 1992

The Fe-base amorphous ribbons with 15mm width and about 20x10S0-6Tm thickness, (FeS179-xTCrS1xT)BS116TSiS15T and (FeS181-xTMnS1xT) BS112TSiS17T (x:0-6), were prepared melt spinner. The thickness of the ribbons followed by PFC (Planar Flow Casting). The initial permeability and total core losses were measured as a function of additive elements (Cr, Mn) and annealing conditions in high frequency for the purpose of using these materials as a core of magnetic amplifier and switched mode power supplies. The initial permeabilities were enhanced and core losses were decreased by non-magnetic field annealing in proper conditions. The lowest core loss in 0.2T/10kHz was measured at 3% Cr addition amorphous ribbon, and the loss was 5.6W/kg. The permeability of the ribbon at 10kHz was about 9000.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.31-34
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• 1997

A reversible scalar phenomena in amorphous As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ have been investigated by blue-pass-filtered Hg lamp and He-Ne laser. Annealing causes the shift of the absorption edge to shelter wavelengths approximately 0.17ev, also illumination moves it to longer wavelengths about 0.05 ~ 0.07eV and it increases the refractive index maximum 0.3. Therefore the thermalbleaching(TB) and photodarkening(PD) effects have been understood by the results related to optical absorption characteristics. TB could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, PD could be understood as due to the enhancement of disorder since the slope of Urbach’s tail(1/F) around an absorption edge were decreased by illumination.ion.n.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.23-27
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• 2005

We observed that optical properties of silicon changed under high dose electron irradiation at 250 keV. Our experimental results revealed that the optical transmission through a silicon wafer is significantly increased by electron irradiation. Transmission increase by the change in the absorption coefficient is explained through an analogy with amorphous silicon. Moreover, solar cell open-circuit voltages indicated that defects were generated by electron irradiation, and that the defects responded to annealing. Our results demonstrated that the optical properties of silicon can be controlled by a combination of electron irradiation and hydrogen annealing.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.376-385
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• 1995

Copper-chromium multilayers with a nominal bilayer thickness of about 400 $\AA$ (200 $\AA$ each) were prepared by dc magnetron sputtering and the evolution of microstructure during heat treatment was investigated by using x-ray diffractometry(XRD), Auger electron spectroscopy(AES) and transmission electron microscopy(TEM). It was observed that an amorphous phase with a thickness of about 40 $\AA$ was formed at the interfaces of the as-deposited Cu/Cr multilayered film using cross-sectional TEM. At elevated temperatures, the Cu(111) reflection showed increasing intensity and decreasing line-width as a result of copper grain growth. The intermixed amorphous phase disappeared after annealing at $250^{\circ}C$ for 1 h and the multilayer structure was stable up to $400^{\circ}C$ for 1 h annealing. At $600^{\circ}C$ annealing, it was observed that the multilayer structure was completely destroyed and copper and chromium phases were fully intermixed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.236-238
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• 1990

For improving magnetic properties of the amorphous Fe-B-Si alloy, we annealed in a magnetic field oriented in the plane of the ribbon longitudinal to its long axis. By field annealing, coercive force and total core loss are reduced from 0.04 Oe to 0.02 Oe, and from 0.25 watt/kg to 0.15 watt/kg respectively comparing with non-field annealed specimen. These reductions were caused by the formation of $180^{\circ}$ domains parallel to the annealing field due to the induced anisotorpy.