• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.29-33
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• 2000

The crystallographic and high frequency characteristics of $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ soft magnetic alloys were investigated under magnetic field annealing, The crystallization fraction of annealed samples with longitudinal magnetic fields is higher than that of samples without magnetic field. When the transverse magnetic field is applied, the crystallization fraction does not increases but decreases until $500^{circ}C$. It is found that for samples, the saturation induction are all same with 1.3 T. The coercive field of as-cast samples is 1.03 A/cm, but in annealed samples it decrease from 0.56 to 0.1A/cm with increasing annealing temperature from 400 to $550^{circ}C$. The squareness of annealed samples under transverse magnetic field has a small value than that of both without field and with longitudinal field annealing. It is noted that the magnetic field annealing with transverse direction to amorphous $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ profoundly influenced on the Mossbauer spectra in contrast to that with longitudinal direction and without magnetic field.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.75-78
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• 2017

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.75-79
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• 2009

An intrinsic silicon thin film passivation layer is deposited by the microwave remote-plasma enhanced chemical vapor deposition at temperature of $175^{\circ}C$ and various gas ratios for solar cell applications. The good quality amorphous silicon films were formed at silane $(SiH_4)$ gas flow rates above 15 seem. The highest effective carrier lifetime was obtained at the $SiH_4$, flow rate of 20 seem and the value was about 3 times higher compared with the bulk lifetime of 5.6 ${\mu}s$ at a fixed injection level of ${\Delta}n\;=\;5{\times}10^{14}\;cm^{-3}$. An annealing treatment was performed and the carrier life times were increased approximately 5 times compared with the bulk lifetime. The optimal annealing temperature and time were obtained at 250 $^{\circ}C$ and 60 sec respectively. This indicates that the combination of the deposition of an amorphous thin film at a low temperature and the annealing treatment contributes to the excellent surface and bulk passivation.

• Journal of Magnetics
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• 제6권3호
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• pp.86-89
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• 2001

Microstructure modifications are investigated for annealed Co-based amorphous ribbon in vacuum and open air. X-ray diffraction (XRD) spectra for annealed sample in vacuum indicate atomic arrangements with initial nucleation of hcp-Co crystallite at 38$0^{\circ}C$ annealing temperature. However, the XRD spectra in samples with long annealing times of $t_a\geq300$ min demonstrate sharp and good developed surface crystalline hcp-, fcc- Co and $Co_2$Si phases. The giant magnetoimpedance (GMI) profile at 0.1 MHz displaying one-peak behavior in vacuum annealed samples at T = 38$0^{\circ}C$ irrespective of annealing time $t_a$ from 20 to 480 mim. For the annealed samples in an open air, the GMI profile shows two-peaks for $t_a$ = 20 min annealed sample. However, one of peaks disappears and an asymmetric GMI profile exhibits a drastic step-like change near zero field for $t_a\geq300$min. Such asymmetric GMI characteristics is related to the surface microstructures of fcc-Co, hop-Co and $Co_2$Si crystalline phases.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• The Korean Journal of Ceramics
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• 제3권2호
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• pp.96-100
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• 1997

Hydrogenated amorphous carbon films were deposited on silicon substrates by using an RF PECVD. The hydrogen/methane ratio was varied from 50% to 88% to study the effect of hytdrogen in the film on the tribological properties. The friction and wear behaviors of the deposited films were investigated by ball-on-disk type wear tester. FT-IR spectra were used to characterize the structure of the films. Tribological properties of carbon films were correlated with their structure such as ratio of "polymer-like" stretching type and that of sp2 bonding. The result showed that the annealing caused a decrease in the amount of wear of contacted $Si_3N_4$ balls and a increase in the coefficient of friction. Possible explanation for annealing effect was discussed by the hydrogen desorption.esorption.

• Journal of the Optical Society of Korea
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• 제5권1호
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• pp.1-4
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• 2001

The results of investigating $SiL_{2,3}$/ X-ray emission valence spectra of amorphous silicon films irradiated by excimer laser are presented. It is found that laser annealing leads to crystallization of amorphous silicon films and the crystallinity increases with the laser energy density from 250 to 400 mJ/$\textrm{cm}^2$. The vertical structure of the film is investigated by changing the accelerating voltage on the X-ray tube, and the chemical and structural state of Si$_3$N$_4$ buffer layer is found not to be changed by the excimer laser treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.