• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
• /
• pp.209-212
• /
• 2001

High quality Taros thin films have been obtained from anodizing. The as-deposited amorphous films have excellent physical and electrical properties: refractive indices ~2.15, dielectric constants ~25, and leakage currents <10$^{-8}$ Ac $m^{-2}$ at 1MV $cm^{-1}$ , 700$\AA$ thickness. We fabricated a MIM element with theses T $a_2$ $O_{5}$ films which had perfect current-voltage symmetry characteristics using a new process technology which was post annealing of whole MIM element instead of conventional annealing conditions (top-electrode metals, annealing conditions) on the capacitor performances were extensively discussed throughout this work.k.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2000년도 춘계학술대회논문집
• /
• pp.202-205
• /
• 2000

The effect of two step cold rolling and intermediate annealing conditions on the microstructure and texture evolution in type 430 stainless steel has been investigated tin order to improve ridging characteristic and deep drawability. The rolling and recrystallization textures were examined by orientation distributionfunction(ODF) and electron backscattered diffraction(EBSD). The observation showed that the intensity of ${\gamma}$-fiber was increased with two-step cold rolling process and so ridging characteristic and deep drawability were considerably improved. The relation between these properties an texture evolution has been discussed.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.1810-1815
• /
• 2003

Tube hydroforming provides a number of advantages over conventional stamping process, including fewer secondary operation, weight reduction, assembly simplification, adaptability to forming of complex structural components and improved structural strength and stiffness. In this study, the effect of the heat treatment on the hydro-formability has been investigated. By using the mild steel tube bulging test is performed at various heat treatment conditions to evaluate the hydro-formability.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
• /
• pp.224-227
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• 대한의용생체공학회:학술대회논문집
• /
• 대한의용생체공학회 1997년도 추계학술대회
• /
• pp.361-364
• /
• 1997

Bayesian MAP-EM approaches have been quite useful or tomographic reconstruction in that they can stabilize the instability of well-known ML-EM approaches, and can incorporate a priori information on the underlying emission object. However, MAP reconstruction algorithms with expressive priors often suffer from the optimization problem when their objective unctions are nonquadratic. In our previous work [1], we showed that the use of deterministic annealing method greatly reduces computational burden or optimization and provides a good solution or nonquadratic objective unctions. Here, we further investigate the convergence of the deterministic annealing algorithm; our experimental results show that, while the solutions obtained by a simple quenching algorithm depend on the initial conditions, the estimates converged via deterministic annealing algorithm are consistent under various initial conditions.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.911-917
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 추계학술대회 논문집
• /
• pp.17-20
• /
• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
• /
• pp.242-244
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.357-357
• /
• 2010

The electrical characteristics of ZnO thin film transistor (TFT) were investigated. ZnO thin layer was deposited by DC sputtering method and TFTs with ZnO channel layer were fabricated. On/off current ratio and saturated drain current of fabricated devices were improved by annealing in nitrogen ambient at various temperatures. As a result, the electrical characteristics of ZnO TFT were improved by post annealing in nitrogen ambient and it is important to optimize the annealing conditions for ZnO TFT fabrication.

• 열처리공학회지
• /
• 제7권3호
• /
• pp.175-183
• /
• 1994

The effect of batch annealing conditions and austenitizing temperatures on the hardness and microstructural factors were examined by using 420J2 martensitic stainless steel. In spite of the similler hardness after batch annealing, the difference in hardness at the same austenitizing temperature was caused by changes in dissolved carbon during batch annealing. The highest hardness of the specimen was obtained at the batch annealing temperature of $820^{\circ}C$ and austenitizing temperature of $1050^{\circ}C$. The main factor affecting the final hardness of the cold annealed 420J2 specimen was proved to the austenitizing temperature rather than batch annealing temperature.