• Journal of Industrial Convergence
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• v.21 no.3
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• pp.189-194
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• 2023

Recently, various studies on flexible electronic devices have been performed. In this study, the potential of Ag nanowires was evaluated as a material to replace the ITO transparent conductive film. Ag nanomaterials were formed on the glass by a novel brush coating method and an argon plasma evaporation method based on atmospheric pressure plasma. First, the Ag solution is coated on the glass with a brush, and the remaining solvent is removed with atmospheric plasma. During this process of solvent evaporation, a sound is generated by the reaction between the atmospheric plasma and the solvent. Therefore, the remaining amount of the solvent can be confirmed. In order to observe optical properties and electrical results such as reflectance, transmittance, and absorbance according to the number of coatings of the film, the results were analyzed by coating up to 5 times. For the purpose of investigating the interaction of light with Ag nanowires, reflectance and transmittance were measured while changing the wavelength of light from 200 nm to 800 nm. In the case of absorbance, the trend of increasing light absorption of the Ag nanowires according to the coating was clearly confirmed. The electrical properties showed a great change from the time of coating more than 4 times, and in particular, the resistance value was lower than kΩ/cm2 when the coating was applied 5 times. Based on these optical and electrical results, we plan to verify the possibility of a transparent conductive film by applying it to electronic devices in the future.

• Resources Recycling
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• v.26 no.6
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• pp.29-37
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• 2017

Nuclear fuel cladding tube is fabricated by pilgering and annealing process. In order to remove impurity and oxygen layer on the surface, pickling process is carried out. When Zirconium(Zr) is dissolved and saturated in acid solution during the pickling process, all the waste acid including Zr is disposed. Therefore, $BaF_2$ is added into the waste acid to extract Zr and $Ba_2ZrF_8$ is subsequently formed. To recycle Zr by electrowinning process, $Ba_2ZrF_8$ is used as electrolyte, but it has high melting point ($1053^{\circ}C$). $ZrF_4$ should be added into $Ba_2ZrF_8$ to decrease the melting point. In this paper, it was investigated that $Ba_2ZrF_8$ was separated to $BaF_2$ and $ZrF_4$ by vacuum distillation. Firstly, $BaF_2$ with different particle size ($1{\mu}m$, $35{\mu}m$, $110{\mu}m$) was added into the waste acid and the respective precipitation property was estimated. $BaF_2$ obtained by vacuum distillation was shattered by ball-milling with different time. The precipitation efficiency was compared with $1{\mu}m$ of ${BaF_2}^{\prime}s$ one, which was not used as precipitation agent.

• Applied Microscopy
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• v.38 no.4
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• pp.279-284
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• 2008

The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.169-175
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• 2014

Digital ink-jet printing system has many advantages such as fast and fine printing of various images, high efficiency and low cost process. Generally digital ink-jet printing requires ceramic pigments of cyan, magenta, yellow and black with thermal and glaze stability above $1000^{\circ}C$ for the application of porcelain product design. In this study, pink-red colored $CaO-SnO_2-Cr_2O_3-SiO_2$ pigment was synthesized using solid state reaction. The synthesis conditions of $Ca(Cr,Sn)SiO_5$ pigment such as annealing temperature, amount of mineralizer and non-stoichiometric composition were optimized. Crystal structure and morphology of the obtained $Ca(Cr,Sn)SiO_5$ pigment were analyzed using XRD, SEM, PSA, FT-IR and effect of Cr substitution on the pigment color was analyzed using Uv-vis. spectrophotometer and CIE $L^*a^*b^*$ measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.302-308
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• 2013

In this study, we report the synthesis and characteristics of gallium oxide ($Ga_2O_3$) nanoparticles prepared by the polymerized complex method. $Ga_2O_3$ nanoparticles were synthesized using $Ga(NO_3)_3$, ethylene glycol, and citric acid as the starting materials at a low temperature of $500{\sim}800^{\circ}C$. The temperature of the weight reduction by the loss of organic precursor was revealed using TG-DTA analysis. The crystal structural change of $Ga_2O_3$ nanoparticles by the annealing process was investigated by XRD analysis. The morphologies and the size distributions of $Ga_2O_3$ nanoparticles were analyzed using SEM.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.2
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• pp.271-277
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• 2013

Skin pass rolling is a very important process for applying a certain elongation to a strip in the cold rolling and annealing processes, which play an important role in preventing the stretching of the yield point when the material is processed. The exact prediction of the rolling force is essential for obtaining a given elongation with the steel grade and strip size. Unlike hot rolling and cold rolling, skin pass rolling is used to apply an elongation of within 2% to the strip. Under a small reduction, it is difficult to predict the rolling force because the elastic deformation behavior of the rolls is complicated and a model for predicting the rolling force has not yet been established. Nevertheless, the exact prediction of the rolling force in skin pass rolling has gained increasing importance in recent times with the rapid development of high-strength steels for use in automobiles. In this study, the possibility of predicting the rolling force in skin pass rolling for producing various steel grades was examined using foil rolling theory, which is known to have similar elastic deformation behavior of rolls in the roll bite. It was found that a noncircular arc model is more accurate than a circular model in predicting the roll force of high-strength steel below TS 980 MPa in skin pass rolling.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.11
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• pp.771-780
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• 2001

It is indispensable to use the process and device simulation tool in order to analyze accurately the electrical characteristics of ULSI CMOS devices, in addition to developing and manufacturing those devices. The 3D Monte Carlo (MC) simulation result is not efficient for large-area application because of the lack of simulation particles. In this paper is reported a new efficient simulation strategy for 3D MC ion implantation into large-area application using the 3D MC code of TRICSI(TRansport Ions into Crystal Silicon). The strategy is related to our newly proposed split-trajectory method and ion-splitting method(ion-shadowing approach) for 3D large-area application in order to increase the simulation ions, not to sacrifice the simulation accuracy for defects and implanted ions. In addition to our proposed methods, we have developed the cell based 3D interpolation algorithm to feed the 3D MC simulation result into the device simulator and not to diverge the solution of continuous diffusion equations for diffusion and RTA(rapid thermal annealing) after ion implantation. We found that our proposed simulation strategy is very computationally efficient. The increased number of simulation ions is about more than 10 times and the increase of simulation time is not twice compared to the split-trajectory method only.

• Journal of the Korean Electrochemical Society
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• v.6 no.2
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• pp.145-152
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• 2003

Capacitance of a hybrid capacitor that has characteristics of both electrolyte capacitor and supercapacitor is determined by anode surface covered with oxide layer. In this study, optimal condition processes for anode to fabricate a high voltage hybrid capacitor was investigated. We mixed aluminum powder having mean particle size of $40{\mu}m$ with NaCl powders at weight ratio of 4 : 1 and prepared a disk type electrode after annealing at various temperature. After dissolving NaCl in $50^{\circ}C$ distilled water, heat treatment, eletropolishing, chemical treatment, and the first and the second etching of Al disk were conducted. In each process, capacitances and resistances of the disk measured by ac-impedance analyzer were compared to find its optimum treatment condition. Also, the surface morphology of treated disks were observed and compared by SEM. After the second etching, the Al disk was anodized at 365V to make an anode of hybrid supercapacitor that can be operated at 300V, Capacitance and resistance of the anodized Al disk electrode was compared with those of commercialized conventional aluminum electrolytic capacitor at different frequencies.