• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• 한국재료학회지
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• 제29권11호
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• pp.727-733
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• 2019

In this study, the glass melting properties are evaluated to examine the possibility of using refused coal ore as replacement for ceramic materials. To fabricate the glass, refused coal ore with calcium carbonate and sodium carbonate in it (which are added as supplementary materials) is put into an alumina crucible, melted at $1,200{\sim}1,500^{\circ}C$ for 1 hr, and then annealed at $600^{\circ}C$ for 2 hrs. We fabricate a black colored glass. The properties of the glass are measured by XRD (X-ray diffractometry) and TG-DTA (thermogravimetry-differential thermal analysis). Glass samples manufactured at more than $1,300^{\circ}C$ with more than 60 % of refused coal ore are found by XRD to be non-crystalline in nature. In the case of the glass sample with 40 % of refused coal ore, from the sample melted at $1,200^{\circ}C$, a sodium aluminum phosphate peak, a disodium calcium silicate peak, and an unknown peak are observed. On the other hand, in the sample melted at $1,300^{\circ}C$, only the sodium aluminum phosphate peak and unknown peak are observed. And, peak changes that affect crystallization of the glass according to melting temperature are found. Therefore, it is concluded that glass with refused coal ore has good melting conditions at more than $1,200^{\circ}C$ and so can be applied to the construction field for materials such as glass tile, foamed glass panels, etc.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• 폴리머
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• 제27권2호
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• pp.113-119
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• 2003

폴리(에틸렌 테레프탈레이트) (PET)의 열처리 조건들 즉, 상대 습도, 온도 그리고 시간 등에 따라 나타나는 PET의 열적 특성과 결정화 거동에 대해서 연구하였다. PET샘플에 열처리를 수행한 후 수분 함유량, 유리 전이온도($T_g$), 그리고 결정화 온도($T_{\propto}$) 등의 변화를 조사하였다. 그리고 열처리된 PET시편에 대해서 결정화를 시키고 결정화도에 따른 열변형 온도(HDT)를 측정하였다. 또한 사출 성형으로 제작된 PET샘플의 열처리 후 잔류 응력의 완화를 편광 필름을 통하여 조사하였다. 열처리 시의 상대 습도, 온도, 그리고 시간이 증가함에 따라 PET샘플 내의 수분 함유량은 최대 6000 ppm이상 까지 증가하였다. $T_g$와 $T_c$는 시편 내에 수분 함유량이 증가할수록 감소하였다. PET샘플의 결정화도는 수분의 함유량이 증가함에 따라 증가되었다. 그러나 같은 양의 수분 함량에서 결정화도는 열처리의 조건에 따라 다르게 나타났다. PET샘플 내의 잔류응력의 완화는 열처리 조건에 따라 다르게 나타났으며, PET샘플 내에 잔류 응력이 감소할수록 최대 결정화도는 증가하였다.

• 한국진공학회지
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• 제5권4호
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• pp.348-353
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• 1996

CdS/ITO/glass 기판위에 다결정 CdTe 박막을 진공증착법으로 제조한 후 급속열처리하여 열처리 온도와 가스분위기가 CdTe의 박막의 물성과 전지특성에 미치는 효과를 연구하였다. $450^{\circ}C$에서 $550^{\circ}C$까지 공기중 급속열처리한 경우 박막은 EDX 조성분석결과 화학양론비를 유지하였고 표면성분비는 Cd-rich 상태였으나 전처리후 저저항 contact 제조에 유리한 Te-rich 상태로 변화되었다. TEM과 micro-EDX 결과 급속열처리 전후 모두 CdTe는 주상정구조가 관찰되었고 열처리동안 CdTe내로 확산된 S의 양이 로열처리와 비교하여 매우 적음을 알 수 있었다. 급속열처리 온도가 가스분위기 조건 중 공기 중에서 $550^{\circ}C$ 열처리하였을 때 가장 우수한 태양전지효율을 나타내었다.

• 한국재료학회지
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• 제28권12호
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• pp.763-768
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• 2018

In this study, glass fibers are fabricated via a continuous spinning process using manganese slag, steel slag, and silica stone. To fabricate the glass fibers, raw materials are put into an alumina crucible, melted at $1550^{\circ}C$ for 2 hrs, and then annealed at $600^{\circ}C$ for 2 hrs. We obtain a black colored glass. We identify the non-crystalline nature of the glass using an XRD(x-ray diffractometer) graph. An adaptable temperature for spinning of the bulk marble glass is characterized using a high temperature viscometer. Spinning is carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1109^{\circ}C$ to $1166^{\circ}C$, while the winder speed is in the range of 100rpm to 250rpm. We investigate the various properties of glass fibers. The average diameters of the glass fibers are measured by optical microscope and FE-SEM. The average diameter of the glass fibers is $73{\mu}m$ at 100rpm, $65{\mu}m$ at 150rpm, $55{\mu}m$ at 200rpm, and $45{\mu}m$ at 250rpm. The mechanical properties of the fibers are confirmed using a UTM(Universal materials testing machine). The average tensile strength of the glass fibers is 21MPa at 100rpm, 31MPa at 150rpm, 34MPa at 200rpm, and 45MPa at 250rpm.

• 열처리공학회지
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• 제30권4호
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• pp.151-155
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• 2017

The ZTO single layer and ZTO/Ag/ZTO tri-layer films were deposited on glass substrates by using the radio frequency (RF) and direct current (DC) magnetron sputtering and then rapid thermal annealed (RTA) in a low pressure condition for 10 minutes at 150 and $300^{\circ}C$, respectively. As deposited tri-layer films show the 81.7% of visible transmittance and $4.88{\times}10^{-5}{\Omega}cm$ of electrical resistivity, while the films annealed at $300^{\circ}C$ show the increased visible transmittance of 82.8%. The electrical resistivity also decreased as low as $3.64{\times}10^{-5}{\Omega}cm$. From the observed results, it is concluded that rapid thermal annealing (RTA) is an attractive post-deposition process to optimize the opto-elecrtical properties of ZTO/Ag/ZTO tri-layer films for the various display applications.

• 열처리공학회지
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• 제29권4호
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• pp.163-167
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• 2016

$SnO_2$ thin films were prepared by radio frequency magnetron sputtering on glass substrates and then vacuum annealed for 30 minutes at 100, 200, and $300^{\circ}C$, respectively. The thickness of films kept at 100 nm by controlling the deposition rate. While the optical transmittance and electrical resistivity of as deposited $SnO_2$ films were 82.6% in the visible wavelength region and $1.9{\times}10^{-3}{\Omega}cm$, respectively, the films annealed at $200^{\circ}C$ show the increased optical transmittance of 84.5% and the electrical resistivity also decreased as low as $8.5{\times}10^{-4}{\Omega}cm$. From the observed results, it is concluded that post-deposition vacuum annealing at $200^{\circ}C$ is an attractive condition to optimize the opto-elecrtical properties of $SnO_2$ thin films for the opto-electrical applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.287-290
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• 1989

Single-phase $YBa_2Cu_3O_{j-g}$ (YBC) ceramic samples were annealed at $700^{\circ}C$ under a flowing $O_2$ atmosphere for 0, 18, 36, 54 and 72. hours after sintering. The resistivities(p) and the critical current densities($J_c$) of the samples were measured in a temperature range 77 to 300 K by a four probe method, using silver paint contacts. The variations of the electrical properties with annealing time are explained in terms of flux pinning, percolation probability and randomness, and alignment of grains and twins.The anomalous increases in $J_c$ and $T_c$ observed in sample annealed for a relatively long time possibly due to alignment of grains and twins, may imply the occurrence of superconducting glass state in high-$T_c$ superconducting ceramic.

• 열처리공학회지
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• 제25권5호
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• pp.244-248
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• 2012

ITO/$TiO_2$ films were deposited by RF magnetron sputtering on glass substrates and then the effect of vacuum annealing on the structural, optical and electrical properties of the films was investigated. The structural, optical and electrical properties are strongly related to annealing temperature. The films annealed at $300^{\circ}C$ showed a grain size of 40.9 nm, which was larger than as-deposited amorphous films. The optical transmittance in the visible wavelength region also increased, while the electrical resistivity decreased. The ITO/$TiO_2$ films annealed at $300^{\circ}C$ showed the highest optical transmittance of 81% and also showed the lowest electrical resistivity of $3.05{\times}10^{-4}{\Omega}cm$, in this study.