• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.27-30
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• 2002

Boron Phosphide films were deposited on the glass substrate at the low temperature, $550^{\circ}C$, $480^{\circ}C$, by the reaction of $B_{2}H_{6}$, with $PH_{3}$ using CVD. The reactant gas rates were 50 cc/min and 20 cc/min for $B_{2}H_{6}$, 50 cc/min and 40 cc/min for $PH_{3}$ and $1.5\ell$/min for $N_{2}$ carrier gas. The films were annealed for 1hour, 3hours in $N_{2}$ ambient at $550^{\circ}C$ and $400^{\circ}C$. The deposition rate was $1000{\AA}$/min and the refractive index of film was 2.6. From results of XRD measurement the films have the preferred orientation of (1 0 1). For as deposited the film, the data of VIS spectrophotometer show 75.49%, 76.71% for 1hr-annealed and 86.4% for 3hrs-annealed. From AFM datas the surface condition of obtained films are was shown $73{\AA}$, $88.9{\AA}$ and $220{\AA}$ for as-deposited, for 1hr-annealed and for 3hr annealed, respectively.

• Journal of Magnetics
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• 제12권4호
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• pp.133-136
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• 2007

We have carried out the study of magnetocaloric effect for as-quenched and annealed $Fe_{91-x}Y_xZr_9$ alloys. Samples were prepared by arc melting the high-purity elemental constituents under argon gas atmosphere and by single roller melt spinning. These alloys were annealed one hour at 773 K in vacuum chamber. The magnetization behaviours of the samples were measured by vibrating sample magnetometer. The Curie temperature increases with increasing Y concentration (x=0 to 8). Temperature dependence of the entropy variation ${\Delta}S_M$ was found to appear in the vicinity of the Curie temperature. The results show that annealed $Fe_{86}Y_5Zr_9$ and $Fe_{83}Y_8Zr_9$ alloys a bigger magnetocaloric effect than that those in as-quenched alloys. The value is 1.23 J/kg K for annealed $Fe_{86}Y_5Zr_9$ alloy and 0.89 J/kg K for as-quenched alloy, respectively. In addition, the values of ${\Delta}S_M$ for $Fe_{83}Y_8Zr_9$ alloy is 0.72 J/Kg K for as-quenched and 1.09 J/Kg K for annealed alloy, respectively.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.36.2-36.2
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• 2009

In this work, the high power CW Nd:YAG laser has been used for thermal treatment of inkjet printed Ag films-involving eliminating organic additives (dispersant, binder, and organic solvent) of Ag ink and annealing Ag nanoparticles. By optimizing laser parameters, such as laser power and defocusing value, the laser energy can totally be converted to heat energy, which is used to thermal treatment of inkjet printed Ag films. This results in controlling the microstructures and the resistivity of films. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristic of inkjet printed Ag films is compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling image shows that the laser annealed Ag films have large columnar grains and dense structure (void free), while furnace annealed films have tiny grains and exhibit void formation. Due to these microstructural characteristics of laser annealed films, it has better electrical property (low resistivity) compared to furnace annealed samples.

• 한국재료학회지
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• 제19권1호
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• 한국산업융합학회 논문집
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• 제3권4호
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• pp.345-351
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• 2000

The change of crystalline structure of drawn PP filaments were investigated. Samples were treated by isothermally annealed after elevated heating from $20^{\circ}C$. Measurements were carried out with XRD for crystallite size and density gradient tube for crystallinity. Isothermally heat treatment were carried out at the temperature of $100^{\circ}C$, $120^{\circ}C$ and $140^{\circ}C$ for 10min., 30min. and 60min. in dry oven. The isothermal heat treatment after elevated heating from $20^{\circ}C$ were carried out at the temperature of $100^{\circ}C$, $120^{\circ}C$ and $140^{\circ}C$ for 10min., 30min. and 60min. with heating rate of $1^{\circ}C$/min., $5^{\circ}C$/min. and $10^{\circ}C$/min. From the results of this study, it found the following facts. It was found that the crystallinity and crystallite size of (110) plane of sample were increased with increasing of annealed temperature and time. Also crystallinity and crystallite size of samples which were isothermally annealed after elevated heating from $20^{\circ}C$ were higher than those of isohtermally annealed samples.

• 한국산업융합학회 논문집
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• 제5권4호
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• pp.361-366
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• 2002

The change of mechanical properties of drawn PP filaments which was treated by isothermally annealed after elevated heating. Measurements were carried out with UTM for mechanical properties. Isothermally heat treatment were carried out $100^{\circ}C$, $120^{\circ}C$, $140^{\circ}C$ for 10min., 30min., 60min, in silicon oil bath. And isothermally heat treatment after elevated heating from $20^{\circ}C$ were carried out $100^{\circ}C$, $120^{\circ}C$, $140^{\circ}C$ for 10min., 30min., 60min., with heating rate of $1^{\circ}C/min$., $5^{\circ}C/min$., $10^{\circ}C/min$. From the results of this study, it found the following facts. Initial modulus and tensile strength were increased with increasing of annealed temperature and time. Also initial modulus of tensile strength of samples which were isothermally annealed after elevated heating from $20^{\circ}C$ were higher than those of isothermally annealed samples.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.532-534
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• 2000

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.173-174
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• 2002

To study the effects of mating materials on the tribological properties of DLC films. we used a ball-on-plate reciprocating friction tester in dry air and mating materials of martensite stainless steel (hardened, annealed SUS440C), austenite stainless steels (SUS304), and bearing steel (hardened, annealed SUJ2). At a light load of 0.6 N, the friction coefficient always exceeded ${\mu}>0.3$. Tribological properties of DLC film were still excellent above 0.6 N, except in sliding against annealed SUJ2. Analysis using micro-laser Raman spectroscopy showed that the difference between annealed SUJ2 and others materials appears mainly due to structural change in film.

• Fibers and Polymers
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• 제6권4호
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• pp.284-288
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• 2005

Poly(ethylene terephthalate) was annealed at different temperature and pressure of supercritical carbon dioxide $(CO_2)$ using samples quenched from the melt. Crystallization and molecular relaxation behavior due to $CO_2-annealing$ of samples were investigated using differential scanning calorimetric and dynamic mechanical measurements. The glass transition and crystallization temperatures significantly decreased with increasing temperature and pressure of $CO_2$. The dynamic mechanical measurement of samples annealed at $150^{\circ}C$ in supercritical $CO_2$ showed three relaxation peaks, corresponding to existence of different amorphous regimes such as rigid, intermediate, and mobile domains. As a result, the mobile chains were likely to facilitate crystallization in supercritical state. It also led to the decreased modulus of $CO_2-annealed$ samples with increasing pressure.

• 한국재료학회지
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• 제27권5호
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.