• 한국자기학회지
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• 제27권3호
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• pp.77-81
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• 2017

회전 이방성 효과는 교환 결합력을 갖는 강자성/반강자성 박막의 강자성 공명 측정에서 나타나는 현상으로 교환 결합력 에너지에 의한 반강자성층의 회전에 기인한다. 본 연구에서는 $CoFe(t_F)/MnIr(2.5nm)$ 박막 재료에서 CoFe의 두께에 따른 회전 이방성 자기장과 강자성 공명 선폭 특성을 분석하였다. 회전 이방성 자기장은 $t_F$에 반비례하는 두께 의존성을 보였으며, 이들 결과는 회전 이방성 에너지가 $0.96erg/cm^2$인 조건을 만족하였다. 강자성 공명 선폭은 $t_F$ < 50 nm에서 회전 이방성 자기장의 세기에 비례하는 특성을 보였으며, $t_F$ > 50 nm에서 와전류에 의한 특성이 두드러지게 나타났다.

• Journal of Magnetics
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• 제18권2호
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• pp.155-158
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• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.560-563
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• 2007

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

• Journal of Magnetics
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• 제6권4호
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• pp.142-144
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• 2001

A method to deduce the rotational magnetization curve from experimental magnetization of partially aligned uniaxial anisotropy system has been investigated. The curve obtained by this process has been evaluated quire close to the theoretical magnetization curve compared to that obtained by linear extrapolation from high field data. This new approach offers better accuracy for the determination of magnetic anisotropy by fitting a calculated magnetization curve to the obversed one.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.556-561
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• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

• 한국초전도ㆍ저온공학회논문지
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• 제16권4호
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• 한국자기학회지
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• 제21권1호
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• pp.10-14
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• 2011

본 연구에서는 열처리에 따른 자기이방성 자기장 및 강자성 공명 선폭(${\Delta}H_{PP}$) 변화 특성을 분석하기 위하여 열처리 전후의 CoFeB/MgO 박막 재료에 대하여 강자성 공명 신호를 측정하였다. 열처리 전에 일축이방성 자기장($H_{K1}$) 특성을 보이던 CoFeB는 열처리 후 쌍축이방성 자기장 ($H_{K2}$) 특성이 부가적으로 확연히 나타났다. 이는 비정질 CoFeB가 열처리에 의하여 B이 확산되는 과정에서 박막의 수평면에서 (001)결정면을 갖는 MgO 계면으로부터 CoFeB 역시 (001)결정면을 갖는 입방결정으로 성장하였기 때문이다. 또한 쌍축이방성을 갖는 결정축의 영향으로 수평면에서의 자화용이축의 분포 특성을 증가시켜 ${\Delta}H_{PP}$도 증가하는 특성을 보인다.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.724-728
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• 2005

Electro-optic characteristics of reflective hybrid aligned liquid crystal (LC) cell driven by fringe field using a nematic LC with positive dielectric anisotropy have been studied. Optimized optical configurations are achieved by using a single polarizer, half-wave film and a cell with quarter-wave retardation. The simulation results shows an optimum cell retardation of $0.30{\mu}m$. This value may allow a practical cell gap larger than $3{\mu}m$, which makes it easy to control in the manufacturing process. Furthermore, this LC cell with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $100{\circ}$ in vertical direction and $160{\circ}$ in horizontal direction. Also, when using the LC with positive dielectric anisotropy rather than negative dielectric anisotropy, the display shows low power consumption and fast response time.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.61-62
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• 2009

Electro-optical properties of liquid crystal display (LCD) using fringe-field switching (FFS) devices depend on many parameters such as cell retardation, electrode structure, magnitude and sign of dielectric anisotropy, rubbing angle and cell gap. In this paper, the light efficiency of FFS device depending on magnitude of positive dielectric anisotropy with other cell parameters such as rubbing angle and angle and cell gap have been explored compared with FFS device using LC with negative dielectric anisotropy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.