• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.77-81
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• 2017

The rotatable anisotropy effect was observed in the ferromagnetic resonance measurement in exchange coupled ferromagnetic/antiferromagnetic thin films and it was due to rotation of antiferromagnetic layer by the exchange coupling energy. We analyzed the CoFe thickness dependence of rotatable anisotropy field and ferromagnetic resonance linewidth in exchange coupled $CoFe(t_F)/MnIr(2.5nm)$ thin films. The rotatable anisotropy field was inversely propositional to the CoFe thickness and it was well fitted by the rotatable anisotropy energy of $0.96erg/cm^2$. The ferromagnetic resonance linewidth were linearly propositional to the rotatable anisotropy field in $t_F$ < 50 nm, while it was more dominated by the eddy current effect in $t_F$ > 50 nm.

• Journal of Magnetics
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• v.18 no.2
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• pp.155-158
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• 2013

FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and back-scattered particles which have a high in-plane magnetic anisotropy field $H_k$ above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and $H_k$ of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high $H_k$ of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.560-563
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• 2007

The light efficiency of fringe-field switching (FFS) mode was found to be dependent on the magnitude of dielectric anisotropy, indicating that the voltagedependent maximal effective cell retardation value in the on state is a function of magnitude of the dielectric anisotropy of the LC.

• Journal of Magnetics
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• v.6 no.4
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• pp.142-144
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• 2001

A method to deduce the rotational magnetization curve from experimental magnetization of partially aligned uniaxial anisotropy system has been investigated. The curve obtained by this process has been evaluated quire close to the theoretical magnetization curve compared to that obtained by linear extrapolation from high field data. This new approach offers better accuracy for the determination of magnetic anisotropy by fitting a calculated magnetization curve to the obversed one.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.556-561
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• 2013

Interest in spin-torque oscillators (STOs) has been increasing due to their potential use in communication devices. In particular the magnetic tunnel junction-based STO (MTJ-STO) with high perpendicular anisotropy is gaining attention since it can generate high output power. In this paper, a circuit-level model for an in-plane magnetized MTJ-STO with partial perpendicular anisotropy is proposed. The model includes the perpendicular torque and the shift field for more accurate modeling. The bias voltage dependence of perpendicular torque is represented as quadratic. The model is written in Verilog-A, and simulated using HSPICE simulator with a current-mirror circuit and a multi-stage wideband amplifier. The simulation results show the proposed model can accurately replicate the experimental data such that the power increases and the frequency decreases as the value of the perpendicular anisotropy gets close to the value of the demagnetizing field.

• Progress in Superconductivity and Cryogenics
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• v.16 no.4
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• pp.31-35
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• 2014

The upper critical field ($H_{c2}$) was determined by applying a magnetic field along the ab plane and c axis for two single crystals of $BaFe_{2-x}Ru_xAs_2$ (x=0.48 and 0.75). The anisotropy of the $H_{c2}(0)$, ${\gamma}(0)=H_{c2}{^{ab}}(0)/H_{c2}{^c}(0)$, was ~1.6 for x=0.48 and ~2.3 for x=0.75. The angle-dependent resistance measured below $T_c$ allowed perfect scaling features based on anisotropic Ginzburg-Landau theory, leading to consistent anisotropy values. Because only one fitting parameter ${\gamma}$ is used in the scaling for each temperature, the validity of the ${\gamma}$ value was compared with that determined from ${\gamma}=H_{c2}{^{ab}}/H_{c2}{^c}$. The ${\gamma}$ obtained at a temperature close to $T_c$ was 3.0 and decreased to 2.0 at low temperatures. Comparing to the anisotropy determined for electron- or hole-doped $BaFe_2As_2$ using the same method, the present results point to consistent anisotropy in Ru-doped $BaFe_2As_2$ with other electron- or hole-doped $BaFe_2As_2$.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.10-14
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• 2011

We have measured the ferromagnetic resonance (FMR) signal in as deposited and $400^{\circ}C$ annealed CoFeB/MgO thin film to investigate the annealing effect on magnetic anisotropies and FMR linewidth (${\Delta}H_{PP}$). The uniaxial anisotropy field ($H_{K1}$) was only observed in the as deposited sample. Whereas, in the $400^{\circ}C$ annealed sample, the biaxial anisotropy field ($H_{K2}$) was additionally observed in accompany with uniaxial anisotropy field ($H_{K1}$). The appearance of biaxial anisotropy fields was originated from the crystalline growth of bcc CoFeB(001) from the MgO(001) interface and by the B diffusion during thermal annealing. Also, the ${\Delta}H_{PP}$ of $400^{\circ}C$ annealed sample was increased compared with that of as deposited sample, which was due to the broad distribution of the magnetization axis by the biaxial anisotropy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.724-728
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• 2005

Electro-optic characteristics of reflective hybrid aligned liquid crystal (LC) cell driven by fringe field using a nematic LC with positive dielectric anisotropy have been studied. Optimized optical configurations are achieved by using a single polarizer, half-wave film and a cell with quarter-wave retardation. The simulation results shows an optimum cell retardation of $0.30{\mu}m$. This value may allow a practical cell gap larger than $3{\mu}m$, which makes it easy to control in the manufacturing process. Furthermore, this LC cell with optimized cell parameters shows low wavelength dispersion and the contrast ratio greater than 5 over exists about $100{\circ}$ in vertical direction and $160{\circ}$ in horizontal direction. Also, when using the LC with positive dielectric anisotropy rather than negative dielectric anisotropy, the display shows low power consumption and fast response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.61-62
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• 2009

Electro-optical properties of liquid crystal display (LCD) using fringe-field switching (FFS) devices depend on many parameters such as cell retardation, electrode structure, magnitude and sign of dielectric anisotropy, rubbing angle and cell gap. In this paper, the light efficiency of FFS device depending on magnitude of positive dielectric anisotropy with other cell parameters such as rubbing angle and angle and cell gap have been explored compared with FFS device using LC with negative dielectric anisotropy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.