• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1390-1395
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• 1999

Zr(Y,Ce)O2 TZP ceramics were prepared by sintering compacts of 3 mol% Y2O3-TZP(3Y-TZP) powders with different amount of 12 mol% CeO2-TZP(12Ce-TZP) in air at 140$0^{\circ}C$ for 2 h. The phase changes microstructure and mechanical properties of Zr(Y. Ce)O2 TZP after hydrothermal aging(20$0^{\circ}C$ 5h) were investigated. Although an addition of 12Ce-TZP accelerated the grain growth of Zr(Y, Ce)O2 TZP it restrained the transformation of tetragonal to the monoclinic phase during aging. The degradation in mechanical properties of sintered bodies was governed by the formed monoclinic phase and chemical composition. Induced Vickers indentation crack was propagated intergranually. From SEM observation of the fracture surfaces the pull-out of individual grain was confirmed.

• Proceedings of the Korean Magnestics Society Conference
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• 2011.12a
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• pp.101-101
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• 2011

The control of magnetization by an electric field at room temperature remains as one of great challenges in materials science. Multiferroics, in which magnetism and ferroelectricity coexist and couple to each other, could be the most plausible candidate to realize this long-sought capability. While recent intensive research on the multiferroics has made significant progress in sensitive, magnetic control of electric polarization, the electrical control of magnetization, the converse effect, has been observed only in a limited range far below room temperature. Here we demonstrate at room temperature the control of both electric polarization by a magnetic field and magnetization by an electric field in a multiferroic hexaferrite. The electric polarization rapidly increases in a magnetic field as low as 5 mT and the magnetoelectric susceptibility reaches up to 3200 ps/m, the highest value in single phase materials. The magnetization is also modulated up to 0.34 mB per formula unit in an electric field of 1.14 MV/m. Furthermore, this compound allows nonvolatile, magnetoelectric reading- and writing-operations entirely at room temperature. Four different magnetic/electric field writing conditions generate repeatable, distinct M versus E curves without dissipation, offering an unprecedented opportunity for a multi-bit memory or a spintronic device applications.

• Parasites, Hosts and Diseases
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• v.53 no.6
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• pp.699-703
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• 2015

Cystic echinococcosis (CE) is one of the most widespread zoonotic helminthiases, which can last an asymptomatic infection for several years. The purpose of this study was to demonstrate serum antibody prevalence of CE among asymptomatic people in Uzbekistan using ELISA. A total of 2,547 serum samples were collected, 66 from confirmed CE patients and 2,481 of patients with other diseases than CE at a hospital in Tashkent, Uzbekistan. The serum samples were screened for CE specific IgG antibodies by ELISA using cystic fluid antigen obtained from sheep. The serum antibody positive rate was 89.4% (59/66) in CE and 3.6% (89/2,481) in other disease patients. The present ELISA recognized 89.4% sensitivity and 96.4% specificity. The ELISA absorbance of positive samples was distributed 0.271-0.971 for CE and 0.273-0.887 for other disease patients. The other disease patients with high absorbance over 0.3 were 50 (2.0%) who were presumed to be active CE patients. The patients in their 40s showed the highest positive rate of 5.2% (P=0.181), and women were 4.4% while men were 3.1% positive (P=0.136). The data confirmed that there are many asymptomatic patients of CE in Tashkent. It is indicated that CE is an endemic disease of public health importance in Uzbekistan.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.447-450
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• 2003

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR (DLAR) coating of MgF$_2$/CeO$_2$. We investigated CeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ deposited at 40$0^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4${\mu}{\textrm}{m}$ to 1.1${\mu}{\textrm}{m}$. We achieved the efficiencies of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details on MgF$_2$, CeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• Journal of the Korean Home Economics Association
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• v.30 no.1
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• pp.1-9
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• 1992

Graft polymerization mechanism and rate of polymerization of MMA and MMA/4-VP onto cellulose fiber using Ce(IV) salt as an initiatior were investigated. It was shown that the concentration of Ce(IV) salt affected on the graft yield, graft efficiency, total conversion and the rate of graft polymerization. The graft yield and total cenversion for MMA grafted polymer were significantly higher than those for MMA/4-VP grafted polymer with variation of CAN concentration. In this system the oxidative termination by Ce(IV) salt was considered particularly in higher concentration Ce(IV) ion. The change in the mode of termination reactions with variation of CAN concentration made possible the presence of an optimum Ce(IV) ion concentration for maximum graft yield.

• Journal of Magnetics
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• v.4 no.3
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• pp.102-106
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• 1999

Ce exhibits the intermediate valence (IV) state both as an element and in its compounds. In the present review characteristic behavior of the materials showing the IV state are described. Then the methods of producing this state : the application of the external pressure, temperature and magnetic field as well as the alloying are being discussed. An identification of the IV state is frequently not a simple goal and the best results can be obtained using a combination of various independent methods. Particular attention is paid to the X-ray spectroscopy, lattice parameters and the magnetic properties. As the examples of the IV state in the Ce compounds the properties of following materials are reported : CeRhSb, $CeCu_5In_7, CeAg_6In_6, Sc_{1-x}Ce_xFe_4Al_8 $and for comparison Sc1-xYbxFe4Al8.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the SCSK Conference
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• 2003.09a
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• pp.570-577
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• 2003

The importance of cornified envelope (CE)-bound lipids to epidermal barrier function is increasingly being recognized. In the present study, we intentionally damaged the cornified layer of hairless mice by ultraviolet irradiation and sodium dodecyl sulfate (SDS) treatment, and assessed the changes in epidermal barrier function by measuring Trans Epidermal Water Loss (TEWL). We also measured changes in the amount of CE-bound lipids using thin layer chromatography (TLC). The results showed that both treatments increased TEWL and decreased CE-bound lipids (omega-hydroxy cerami de and omega-hydroxy acid). In addition, investigation of the chronological changes in TEWL revealed an inverse relationship between TEWL and CE-bound lipids, and a correlation between CE-bound lipids and epidermal barrier function. We then measured the amount of CE-bound lipids in the cheek and the medial side of the upper arm in humans. The results showed that because the cheek receives external stimulation on a daily basis, the amount of CE-bound lipids was significantly lower, while the level of TEWL was higher. These observations, together with those from the animal study, indicate that CE-bound lipids are related to epidermal barrier function.