• Journal of the Korean Vacuum Society
• /
• v.7 no.3
• /
• pp.195-200
• /
• 1998

We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.

• Journal of Technologic Dentistry
• /
• v.29 no.1
• /
• pp.121-131
• /
• 2007

A preparation process's conditions of aqueous sol which contains anatase-type nano titania particles with photocatalyic properties was established by using Yoldas process, so called, DCS(Destabilization of Colloidal Solution) process in this study. And crystal size change and phase transformation of titania particles in aqueous titania sol depending on reaction conditions was investigated by a light scattering method and XRD analysis of frozen dried powders, respectively. This sol with photo catalytic nano titania particles was used to the following hydrophilic hybrid coating film's fabrication and its properties was evaluated. Subsequently, for coating film using the above mentioned aqueous titania sol, non-aqueous titania sol was prepared without any chemical additives and its time stability according to aging time was investigate. By using the above mentioned aqueous titania sol and non-aqueous sol, a complex oxide coating sol for metal and ceramic substrate and a organic-inorganic hybrid coating sol for polymer substrate was prepared and it's hydrophilicity depending on UV irradiation conditions was evaluated. As a conclusions, the following results were obtained. (1)Aqueous titania sol The average particle size of titania in formed aqueous titania sol was distributed between 20$\sim$90nm range depending on reaction conditions. And the crystal phase of titania powders obtained by frozen drying method was changed from amorphous state to anatase and subsequently transformed to rutile crystal phase and it is attributed to concentration gradient in aqueous sol. (2)Non-aqueous titania sol Non-aqueous titania sol was prepared using methanol as a solvent and a little distilled water for hydrolysis and nitric acid as a catalyst were used. The obtained non-aqueous titania sol was stable at room temperature for 20 days. Additionally, non-aqueous titania sol with addition of chealating reagent such as acethylaceton and ethylene glycol prolonged the stability of sol by six months. (3)Complex sol and hybrid sol with super hydrophilicity The above mentioned aqueous titania sol as a main photocataylic component and non-aqueous titania sol as a binder for coating process was used to prepare a complex sol used for metal, ceramic and wood material substrate and also to prepare the organic-inorganic hybrid sol for polymer substrate such as polycarbonate and polyethylene, in which process APMS(3-Aminopropyltrimethoxysilane), GPTS(3-Glycidoxypropyl-trimethoxysilane) as a hydrophilic silane compound and HEMA(2-Hydroxyethyl methacrylate) as a forming network in hybrid coating film were used. The hybrid coating film such as prepared through this process showed a superhydrophilicity below 1$10^{\circ}$ depending on processing conditions and a pencil's hardness over 6 H.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.362-362
• /
• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Resources Recycling
• /
• v.17 no.5
• /
• pp.52-59
• /
• 2008

Sol-gel process applied in this study was carried out by chelation of metal ions and citric acid. From the results of thermal gravimetric analysis and XRD analysis of gel powder obtained through sol-gel and heat treatment, gel powders are mostly amorphous, and crystallize completely at $900^{\circ}C$, and the crystalline structure of YAG increases with increasing calcinations temperature. Since YAG prepared by sol-gel & calcinations process was porous, and the sape and size was irregular and nonuniform, the shape and size of YAG powder had to be controlled. Therefore the effects of organic materials such as ethylene glycol and surfactant on the crystalline structure of YAG powder were investigated. Polyesterification of ethylene glycol and citric acid separated reaction area of metal ions in the solution and decreased the size of YAG primary particles. The addition of Igepal 630 as surfactant formed the droplet in the solution, and increased the size of primary particles which forms the aggregate of YAG In order to obtain monodispersed YAG particles of uniform size, gel powder prepared with organic materials had to be milled before calcination. And milling process was very important for obtaining YAG of uniform size.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.8
• /
• pp.23-28
• /
• 2019

The structural integrity of a surface metal coating was evaluated through numerical results to improve the efficiency and reduce the damage caused by cavitation in ships and marine plants. The goal was to ensure structural strength and performance, even if the thickness of the wing is reduced to reduce the weight of the material and surface coating. Analytical methods were used for four models: a non-coating model, one with the same thickness after coating, one with a thickness reduction of 3% after coating, and one with thickness reduction of 5% after coating. With a thickness reduction of 5% after coating, the stress was increased to 12%, and the safety factor was 0.99%, so the structural integrity was insufficient. However, a better material or a thicker coating could allow a sufficient safety factor to be secured. The structural integrity was improved by the coating, and even when the weight was reduced up to 5%, the structural integrity could be sufficiently secured due to the coating effect.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Electrochemical Society
• /
• v.9 no.4
• /
• pp.141-150
• /
• 2006

Nanocrystalline CoW thin/thick film alloys were electodeposited from citrate baths to investigate the influences of metal ion concentration, current density and solution pH on chemical composition, current efficiency, residual stress, surface morphology, and microstructure of the film. Deposit W (tungsten) content in CoW thin/thick film increased with increasing W ion concentration, current density, and solution pH in the plating bath. It was observed that residual stress in CoW thin/thick film decreased with increasing W ion concentration and solution pH. CoW thin film exhibited mixed phases of hop Co [(100) and (002)] and hcp $Co_3W$ [(002) and (201)] at W ion concentration with 0.02 to 0.08 M. The microstructure of CoW thin film at W ion concentration of 0.1 to 0.2 M was close to amorphous phase. The dominant phases were found to be hop Co (002) and hop $Co_3W$ [(200), (002) and (201)] at the current densities of 5, 10, 25, and $100mA{\cdot}cm^{-2}$ CoW thin film at the current densities of 50 and $75mA{\cdot}cm^{-2}$ was close to amorphous phase. At solution pH 8.7, CoW thin film exhibited hcp Co (002) and hop $Co_3W$ [(200), (002) and (201)]. Below solution pH 8.7, CoW thin film exhibited amorphous microstructure. The optimum electrodeposition conditions for CoW thin/thick film were found to be W ion concentration of 0.08 M, current density of $10mA{\cdot}cm^{-2}$, and solution pH 8.7.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.239-240
• /
• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of Soil and Groundwater Environment
• /
• v.11 no.5
• /
• pp.20-34
• /
• 2006

This study was undertaken to assess the anthropogenic impact on trace metal concentrations (Zn, Cu, Pb, Cr, Ni, and Cd) of roadside sediments (N = 70) from No.7 national road within the watershed of Hoidong Reservoir in Pusan City and to estimate the potential mobility of selected metals using sequential extraction. We generally found high concentrations of metals, especially Zn, Cu and Pb, affected by anthropogenic inputs. Compared to the trace metal concentrations of uncontaminated stream sediments, arithmetic mean concentrations of roadside sediments were about 7 times higher for Cu, 4 times higher for Zn, 3 times higher for Pb and Cr and, 2 times higher for Ni and As. Speciation data on the basis of sequential extraction indicate that most of the trace metals considered do not occur in significant quantities in the exchangeable fraction, except for Cd and Ni whose exchangeable fractions are appreciable (average 29.3 and 25.8%, respectively). Other metals such as Zn (51.4%) and Pb (45.2%) are preferentially bound to the reducible fraction, and therefore they can be potentially released by a pH decrease and/or redox change. Copper is mainly found in the organic fraction, while Cd is highest in the exchangeable fraction, and Cr and Ni in the residual fraction. Considering the proportion of metals bound to the exchangeable and carbonate fractions, the comparative mobility of metals probably decreases in the order of Cd>Ni>Pb>Zn>Cr>Cu. Although the total concentration data showed that Zn was typically present in potentially harmful concentration levels, the data on metal partitioning indicated that Cd, Ni and Pb pose the highest potential hazard for runoff water. As potential changes of redox state and pH may remobilize the metals bound to carbonates, amorphous oxides, and/or organic matter, and may release and flush them through drain networks into the watershed of Hoidong Reservoir, careful monitoring of environmental conditions appears to be very important.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.254-255
• /
• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.