• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Journal of the Korea Institute of Military Science and Technology
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• v.6 no.3
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• pp.44-53
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• 2003

Cu/C films were prepared at room temperature under $Cu(hfac)_2-Ar-H_2$ atmosphere in order to obtain metallized polymer by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The room temperature MOCVD on polymer substrate could be possible by collaboration of ECR and a DC bias. Structural analysis of the films by ECR was found that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. The increase in $H_2$ contents brought on copper-rich film formation with low electric resistance. On the other hand carbon-rich films with low sheet electric resistance were prepared in argon atmosphere. The electric sheet resistance of Cu/C films with good interfacial property were controlled at $10^8$~$10^0$ Ohm/sq. ranges by the $H_2$/Ar mole ratio and the shielding effectiveness of the film showed maximum up to 45dB in the our experimental range.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.923-926
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• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.91-91
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• 2017

트라이볼로지란? 상대운동을 하면서 서로 영향을 미치는 두면 및 이와 관련된 문제로 마찰, 마모, 윤활에 대한 것을 말한다. 트라이볼로지는 1960대에 조사 연구되기 시작하면서 학문적으로 많은 정리가 이루어졌고, 현재 현대사회에서 문제가 되고 있는 에너지 및 환경 문제를 해결할 수 있는 핵심 요소로 떠오르고 있다. 특히 4차 산업혁명시대를 맞이하여 많은 부분에서는 인공지능, 클라우딩, 빅 데이터 및 로봇 등을 이야기하고 이에 대한 투자 및 개발을 이야기하고 있지만, 이 4차 산업을 뒷받침할, 강인한 제조업이 없으면 불가능한 혁명이라고 말 할 수 있다. 특히 트라이볼로지는 제조업의 무인 자동화 및 무인 로봇 등 이를 필요로 하는 산업 기기와 같은 전반적인 부품 및 소재의 마모를 감소시켜, 기계 장치의 신뢰성을 증가시킬 수 있다. 마찰은 두 물체 상호간의 열 발생을 억제 시키고, 마모는 물체의 표면 경도가 높으면 높을수록 마모량이 적어진다고 알려져있다. 따라서 트라이볼로지와 관련한 표면 처리의 경우, 고온 환경에서의 사용성 증대 및 고경도화 그리고 저마찰을 위한 방향으로 개발 발전되어져 왔다. 트라이볼로지 코팅 중 내마모 코팅의 경우, 티타늄 원소를 기본으로 알루미늄(Al) 및 실리콘(Si)를 합금화하면서, 고경도화 및 내열성을 증대시키는 방향으로 발전되어 왔다. 그에 따라 표면경도의 경우, 4000 Hv, 내열성 $1200^{\circ}C$에 도달였다. 하지만 여전히 철계와의 마찰계수는 0.3 이상으로 이를 낮추는 방법이 요구되고 있다. 최근 트라이볼로지 코팅 중 카본을 함유한 비정질 다이아몬드상 카본 막 (Diamond like Carbon Film : DLC) 이나, Diamond 막의 수요 증가는 마찰을 낮추어 융착마모를 줄이려는 노력으로 볼 수 있다. 특히 수소를 포함하지 않는 고경도 탄소막인 ta-C(tetrahedral amorphous-Carbon)의 수요는 증대되고 있으며, 이에 대한 후막화 및 양산화 기술의 개발의 현재 isssu로 대두되고 있다.

• Tribology and Lubricants
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• v.38 no.6
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• pp.274-280
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• 2022

There is a problem that semiconductor probe pin has a short lifespan. In order to solve this problem, Ti having excellent conductivity was doped to tetrahedral amorphous carbon (ta-C) having excellent hardness and abrasion resistance. This experiment was planned through the Taguchi robust design to determine the effect of the control factor of the ta-C:Ti coating film. The effect and contribution of control factors such as Unbalanced Magnetron Sputter(UBM) discharge current, arc discharge current, temperature, and bias voltage on ta-C:Ti characteristics were analyzed from the perspective of electrical and mechanical characteristics. The UBM discharge current was set to 4, 6, and 8 A. The main control factor of thickness and resistance is the UBM discharge current, and the thickness increased and the resistance decreased as the current increased. The decrease in resistance is due to the increase in the Ti content of the ta-C:Ti coating film. The arc discharge current was set to 60, 80, and 100 A. The main control factor of hardness and wear is the arc discharge current, and as the current rises, the hardness increases and the wear area decreases. This is due to the increased ta-C content of the ta-C:Ti coating film. Since resistance and wear are important for Probe Pin, the optimal level is set from the perspective of resistance and wear and a confirmation experiment is conducted.