• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.905-908
• /
• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.7
• /
• pp.2105-2110
• /
• 2013

Carbon-fiber-supported NiO catalytic filters for oxidation of volatile organic compounds were prepared by electroless Ni-P plating and subsequent annealing processes. Surface structure and crystallinity of NiO film on carbon fiber could be modified by post-annealing at different temperatures (500 and $650^{\circ}C$). Catalytic thermal decompositions of toluene over these catalytic filters were investigated. $500^{\circ}C$-annealed sample showed a higher catalytic reactivity toward toluene decomposition than $650^{\circ}C$-annealed one under same conditions, despite of its lower surface area and toluene adsorption capacity. X-ray diffraction and X-ray photoelectron spectroscopy studies suggest that amorphous structures of NiO on $500^{\circ}C$-annealed catalyst caused the higher reactivity for oxidation of toluene than that of $650^{\circ}C$-annealed sample with a higher crystallinity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.217-217
• /
• 2013

Carbon-fiber-supported NiO catalytic filters for oxidation of volatile organic compounds were prepared by electroless Ni-P plating and subsequent annealing processes. Surface structure and crystallinity of NiO film on carbon fiber could be modified by post-annealing at different temperatures (500 and $650^{\circ}C$. Catalytic thermal decompositions of toluene over these catalytic filters were investigated. $500^{\circ}C$ annealed sample showed a higher catalytic reactivity toward toluene decomposition than $650^{\circ}C$ annealed one under same conditions, despite of its lower surface area and toluene adsorption capacity. X-ray diffraction and X-ray photoelectron spectroscopy studies suggested that amorphous structures of NiO on $500^{\circ}C$ annealed catalyst caused the higher reactivity for oxidation of toluene than that of $650^{\circ}C$ annealed sample with a higher crystallinity.

• Journal of the Korean Vacuum Society
• /
• v.10 no.1
• /
• pp.119-126
• /
• 2001

Hydrogenated amorphous carbon (a-C:H) films were deposited by ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) method with deposition conditions such as ECR plasma source power, gas composition of methane and hydrogen, deposition time and substrate bias voltage. The hydrogen content in the films has been measured by ERDA (elastic recoil detection analysis) using 2.5 MeV $He^{++}$ ion beam. From the results of AES (Auger electron spectroscopy), RBS (Rutherford backscattering spectrometry) and ERDA, the composition elements of deposited film were confirmed the carbon atom and the hydrogen atom. It was observed by FTIR (Fourier transform infrared) that the hydrogen contents in the film varied according to the deposition conditions. In deposition condition of substrate bias voltage, the hydrogen contents were decreased remarkably because the amount of dehydrogenation in films was increased as the substrate bias voltage increased. In the rest deposition conditions, the hydrogen contents in the film were measured in the range 45~55%.

• Journal of the Korean Vacuum Society
• /
• v.9 no.4
• /
• pp.382-388
• /
• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Proceedings of the Korea Society for Industrial Systems Conference
• /
• 2001.05a
• /
• pp.224-231
• /
• 2001

Hydrogenated amorphous carbon films were deposited by ERC-PECVD with deposition conditions, such as ECR power, gas composition of methane and hydrogen, deposition time, and substrate bias voltage. The characteristics of the film were analyzed using the AES, ERDA, FTIR. Raman spectroscopy and micro hardness tester. From the results of AES and ERDA, the elements in the deposited film were confirmed as carbon and hydrogen atoms. FTIR spectroscopy analysis shows that the atomic bonding structure of a-C:H film consisted of sp³and sp²bonding, most of which is composed of sp³bonding. The structure of the a-C:H films changed from CH₃bonding to CH₂or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased. Raman scattering analysis shows that integrated intensity ratio (I/sub D//I/sub G/) of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased.

• Bulletin of the Korean Chemical Society
• /
• v.23 no.2
• /
• pp.225-228
• /
• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.16 no.8
• /
• pp.1747-1752
• /
• 2012

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane (BTMSM) and oxygen mixed precursor by the chemical vapor deposition. The dielectric constant is measured by MIS(metal/insulator/Si) structure, but it could decrease the reliability because the uniformity is not assured. To research the dielectric constant of SiOC film, the range of low polarization was researched in SiOC film using the optical analysis and hardness, and then calculated the dielectric constant of SiOC film with amorphous structure of high degree. After annealing, the dielectric constant of SiOC film was decreased owing to the lowering of polarization, and FTIR spectra of the main bond was shifted to higher wave number. The main bond of 950~1200 cm-1 was composed of the Si-C and Si-O bonds. The intensity increases in Si-O bond infers the bonding strength became stronger than that of deposited film. Annealed SiOC film showed 2.06 in dielectric constant.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2016.11a
• /
• pp.156-156
• /
• 2016

The effect of nitrogen doping on the mechanical and tribological performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to $1{\mu}m$ in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness of the coatings decreased from $65{\pm}4.8GPa$ to $25{\pm}2.4GPa$ with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the $sp^2$ phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics. To achieve highly conductive and wear-resistant coatings in system components, the friction and wear performances of the coating were investigated. The tribological behavior of the coating was investigated by sliding an SUJ2 ball over the coating in a ball-on-disk tribo-meter. The experimental results revealed that doping using a high nitrogen gas flow rate improved the wear resistance of the coating, while a low flow rate of 0-10 sccm increased the coefficient of friction (CoF) and wear rate through the generation of hematite (${\alpha}-Fe_2O_3$) phases by tribo-chemical reaction. However, the CoF and wear rate dramatically decreased when the nitrogen flow rate was increased to 30-40 sccm, due to the nitrogen inducing phase transformation that produced a graphite-like structure in the coating. The widths of the wear track and wear scar were also observed to decrease with increasing nitrogen flow rate. Moreover, the G-peaks of the wear scar around the SUJ2 ball on the worn surface increased with increasing nitrogen doping.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.1
• /
• pp.49-53
• /
• 2011

Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.