• 한국정보통신학회논문지
• /
• 제18권5호
• /
• pp.1149-1154
• /
• 2014

본 연구는 산화물반도체트랜지스터의 터널링 현상을 살펴보기 위해서 게이트 절연막으로서 SiOC 박막을 사용하고 채널층으로 IGZO를 이용하여 트랜지스터를 제작 하였다. SiOC 박막은 분극이 작아질수록 비정질특성이 우수해지면서 절연특성이 좋아진다. SiOC 게이트 절연막과 채널 층 사이의 계면에 존재하는 접합특성은 SiOC의 분극특성에 따라서 달려졌다. 드레인소스 전류($I_{DS}$)와 게이트소스 전압($V_{GS}$)의 전달특성은 분극이 낮은 SiOC를 사용할 경우 양방향성 전달특성이 나타나고 분극이 높은 SiOC 게이트 절연막을 사용할 경우 단방향성 전달 특성이 나타났다. 터널링에 의한 양방향성 트랜지스터의 경우 바이어스 인가 전압이 낮은 ${\pm}1V$의 영역에서 쇼키접합을 나타냈었지만 트래핑효과에 의한 단방향성 트랜지스터의 경우 오믹접합 특성을 나타내었다. 특히 양방향성 트랜지스터의 경우 터널링 현상에 의하여 on/off 스위칭 특성이 개선되었다.

• 한국재료학회지
• /
• 제24권3호
• /
• pp.135-139
• /
• 2014

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2018년도 추계학술대회
• /
• pp.193-194
• /
• 2018

일반적인 실리콘 트랜지스터는 단방향성특성을 갖는다. 도핑 물질에 따라서 p형 혹은 n형 반도체 물질로 케리어가 달라지고 동작 영역도 달라지기 때문에 반도체 소자는 조건에 따라서 한쪽 방향으로만 동작한다. 이러한 특성은 문턱전압에 의해서 구분된다. 반도체소자인 트랜지스터의 안정성은 문턱전압의 의존도가 높아서 문턱전압이 너무 낮을 경우 한쪽방향으로 동작하는 단방향성 반도체소자를 만들기가 어려워진다. 트랜지스터의 안정성은 반도체센서의 감도에 직접적인 영향을 미치게 되며 현재까지 나와 있는 전자센서들의 감도를 높이기 위해서는 다양한 형태의 화합물의 감지를 전기신호로 변환할 때 얼마나 낮은 전기신호를 감지할 수 있는지에 따라서 달라지며 고감도 센서로써 전자소자의 안정성이 결정된다. 트랜지스터의 안정성을 높이기 위하여 ~ nA 수준의 전기신호에 대한 반응성을 조사 분석하여 고감도의 신호 반응을 나타내는 소재 물질의 양방향성 전달특성에 대하여 분석하고 조사하였다.

• 반도체디스플레이기술학회지
• /
• 제17권2호
• /
• pp.32-35
• /
• 2018

The current voltage characteristics of ZTO/SiOC were researched, and the conductivities of the ZTO films as a channel material were analyzed. The current of SiOC was abruptly decreased near 0V, and then the depletion layer was formed by the disappearance of charges in the region form -12V to +12V. SiOC with Schottky contacts near ${\sim}10^{-9}$ A had the cutoff effect of leakage currents. The conductivity of ZTOs prepared on SiOC was improved in the cutoff region of the leakage current of -12V

• KIEE International Transactions on Electrophysics and Applications
• /
• 제2C권5호
• /
• pp.246-252
• /
• 2002

Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

• Journal of the Korean Physical Society
• /
• 제81권
• /
• pp.942-947
• /
• 2022

We report the electrical transport properties of a dual-gate graphene device placed on a CaF₂ substrate. A hexagonal boron nitride top-gate dielectric was introduced to confirm the electrical characteristics of the CaF₂/graphene transistor because it is difficult to inject sufficient carriers through the CaF₂ substrate owing to its thickness of 500 ㎛, and the typical ambipolar behavior of graphene with a slight n-doping effect was clearly observed. In addition, we used a polymethyl methacrylate (PMMA) film as a top-gate dielectric for large-scale graphene devices grown via chemical vapor deposition, which was transferred onto a CaF₂ substrate. We controlled the high gate leakage current caused by the breakdown of the polymer due to non-uniformity by applying the film-transfer process rather than the direct coating method on the graphene device. Furthermore, the transport properties of large-area graphene in contact with CaF₂ are discussed with respect to the effect of top-contacted PMMA.