• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.172.1-172
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• 2000

• 한국세라믹학회지
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• 제49권6호
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• pp.561-565
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• 2012

Due to their unique combination of properties, Si-based ceramics, such as silicon carbide (SiC), silicon nitride ($Si_3N_4$) and silicon oxide ($SiO_2$ as fused silica), have a range of industrial applications in fields such as the chemical industry, aluminum manufacturing, oil and gas production and solar cell production. For each materials group, examples of typical applications from various industry sectors are presented while taking into account the property fingerprint.

• Applied Microscopy
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• 제44권2호
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• pp.79-82
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• 2014

Aluminum nitride (AlN) powder was easily synthesized by the direct nitridation of Al melt containing ~20 wt.% Mg catalyst and the nitriding behavior was investigated by thermodynamic calculation and through observations of electron microscopy and X-ray diffraction. The addition of Mg catalyst decreased the nitriding temperature below $1,000^{\circ}C$, which is comparable to the high nitriding temperature of $1,400^{\circ}C$ required in carbothermal method. It was caused by a significant increase of the solubility of nitrogen gas due to the increase of Mg catalyst in Al melt. The dissolved nitrogen gas met Mg catalyst and was transformed into metastable $Mg_3N_2$. Finally the metastable phase reacted with Al to AlN.

• Corrosion Science and Technology
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• 제22권4호
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• pp.232-241
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• 2023

The mechanical properties of the hydrogen valve responsible for supplying and blocking hydrogen gas in a hydrogen fuel cell electric vehicle (FCEV) were researched. Mechanical properties by hydrogen embrittlement were investigated by coating chromium nitride (CrN) and titanium nitride (TiN) on aluminum alloy by arc ion plating method. The coating layer was deposited to a thickness of about 2 ㎛, and a slow strain rate test (SSRT) was conducted after hydrogen embrittlement to determine the hydrogen embrittlement resistance of the CrN and TiN coating layers. The CrN-coated specimen presented little decrease in mechanical properties until 12 hours of hydrogen charging due to its excellent resistance to hydrogen permeation. However, both the CrN and TiN-coated specimens exhibited deterioration in mechanical properties due to the peeling of the coating layer after 24 hours of hydrogen charging. The specimens coated at 350 ℃ presented a significant decrease in ultimate tensile strength due to abnormal grain growth.

• 한국세라믹학회지
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• 제31권1호
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• pp.79-87
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• 1994

AIN은 불안정하여 물과 접촉하면 12시간 이내에 172cal/g의 열을 내면서 가수분해되어 알루미나 삼수화물이 생성되었다. AIN의 가수분해 과정은 초기에 비정질 알루미나 수화물이 생성되었으며, 가수분해 조건에 따라 비정질알루미나 수화물의 용해-재석출과정으로 알루미나 삼수화물 특히 bayerite가 생성되었고, 응축과정으로 pseudo-boe-hmite가 AIN 입자표면에 생성되었다. 가수분해 온도 4$0^{\circ}C$ 이하에서는 비정질 알루미나 수화물이, 4$0^{\circ}C$와 6$0^{\circ}C$ 사이에서는 bayerite가 각각 생성되었고, 6$0^{\circ}C$ 이상의 경우는 초기에 pseudo-boehmite의 입자표면에 형성되었다. bayerite는 가수분해 시간이 길수록, 그리고 용액내 pH가 높을수록 잘 생성되었으나 pseudo-boehmite는 가수분해 반응이 급격히 일어날 때와 용액내 ethyl alcohol의 존재로 OH 기의 흡착을 방해하여 가수분해 반응이 억제될 때 잘 생성되었다. 그리고 pH=2.0인 용액에서는 AIN의 가수분해가 거의 일어나지 않았다.

• 한국재료학회지
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• 제25권3호
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Composites Research
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• 제36권2호
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• pp.101-107
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• 2023

본 연구에서는 질화알루미늄을 강화재로 갖는 알루미늄기지 복합재료를 질소 분위기에서의 아크용해 공정을 통해 제조하였다. 알루미늄과 질소 원자의 화학반응을 1분간 유지시켰을 때, 중간층과 라멜라층으로 구분되는 질화알루미늄 강화상이 자발적으로 알루미늄 용탕 내부에 형성되어 기지 전반에 분포되었다. 복합재료는 약 10 vol.%의 AlN을 가지며, 이 강화재는 계면에서 낮은 열저항과 강한 결합을 보였다. 제조된 복합재료는 열전도도가 높고 열팽창계수는 낮은 열적 특성 조합을 보였다. 또한, 본 연구의 복합재료는 이종원소인 실리콘을 기지에 첨가함으로써 열팽창계수를 추가적으로 감소시키는 것이 가능했다. 이는 아크 용해법으로 제조된 알루미늄기지 복합재료가 낮은 열팽창계수를 요구하는 방열소재로 적용될 수 있는 가능성을 시사한다.

• 한국세라믹학회지
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• 제33권9호
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• pp.961-968
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• 1996

The aluminum nitride was synthesized by the self-propagating high-temperature synthesis(SHS). The synthe-sis was used aluminum powder mixed with AlN powder as reactant and the control factors affected to synthesis were considered compact density pressure of reaction gas AlN diluent content and aluminum powder size. The SHS reaction conducted with a reactant containing 50% AlN diluent under 0.8MPa nitrogen gas pressure yielded a complete conversion of aluminum powder to AlN powders. The size and purity of AlN produced were found to be comparable with that of AlN produced by the carbothermal nitrogen method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.483-484
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• 2012