• 제목/요약/키워드: Aluminum Nitride

검색결과 195건 처리시간 0.026초

HVPE(Hydride Vapor Phase Epitaxy) 법을 적용한 N2 양의 변화에 따른 AlN 단결정의 성장 거동에 관한 연구 (A study on the growth behavior of AlN single crystal according to the change of N2 in HVPE propcess)

  • 인경필;강승민
    • 한국결정성장학회지
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    • 제34권2호
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    • pp.61-65
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    • 2024
  • HVPE(Hydride vapor phase epitaxy) 공법은 기체상의 원료를 사용하여 박막 또는 단결정을 제조하는 공법이다. 화학적 기상증착법의 원리를 적용하여 난용융성 또는 고융점의 물질의 단결정을 성장할 수 있는 공법으로서, 질화갈륨(GaN) 단결정을 얻을 수 있는 공법 중 하나이다. 최근 동 공법을 이용하여 질화알루미늄(AlN) 단결정을 성장하고자 하는 연구가 많이 수행되어져 왔으나, 아직은 좋은 결과를 얻지 못하고 있다. 본 연구에서는 AlN 단결정을 HVPE 공법으로 성장하고자 하였다. 성장 공정에서 질소를 운송가스(Carrior gas)로 사용하였으며, 질소(N2)의 양의 변화에 따른 성장 결과를 고찰하여 보았다. 질소의 양이 증가함에 따른 성장 결정의 변화 양상을 확인할 수 있었다. 성장된 AlN 단결정의 형상을 광학 현미경을 사용하여 관찰하였고, 이중결정 X선 회절 분석(DCXRD, Double crystal X-ray diffractometry)을 이용하여, AlN 결정의 생성을 확인함과 동시에 성장된 단결정의 결정성도 알아보았다.

투과전자현미경과 전자후방산란회절을 이용한 AlN의 미세구조 분석 (Microstructure analyses of aluminum nitride (AlN) using transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD))

  • 주영준;박청호;정주진;강승민;류길열;강성;김철진
    • 한국결정성장학회지
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    • 제25권4호
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    • pp.127-134
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    • 2015
  • AlN 단결정은 넓은 밴드갭(6.2 eV), 높은 열 전도도($285W/m{\cdot}K$), 높은 비저항(${\geq}10^{14}{\Omega}{\cdot}cm$), 그리고 높은 기계적 강도와 같은 장점들 때문에 차세대 반도체 적용을 위한 많은 흥미를 끈다. 벌크 AlN 단결정 또는 박막 템플릿(template)들은 주로 PVT(Physical vapor transport)법, 플럭스(flux)법, 용액 성장(solution growth)법, 그리고 증기 액상 증착(HVPE)법에 의해 성장된다. 단결정이 성장하는 동안에 발생하는 결함들 때문에 상업적으로 어려움을 갖게 된 이후로 결함들 분석을 통한 결정 품질 향상은 필수적이다. 격자결함 밀도(EPD)분석은 AlN 표면에 입자간 방위차와 결함이 존재하고 있는 것을 보여준다. 투과전자현미경(TEM)과 전자후방산란회절(EBSD)분석은 전체적인 결정 퀄리티와 다양한 결함의 종류들을 연구하는데 사용된다. 투과전자현미경(TEM)관찰로 AlN의 형태가 적층 결함, 전위, 이차상 등에 의해 크게 영향을 받는 것을 알 수 있었다. 또한 전자후방산란회절(EBSD)분석은 전위의 생성을 유도하는 성장 결함으로서 AlN의 zinc blende 폴리모프(polymorph)가 존재하고 있는 것을 나타내고 있었다.

PVT 법으로 성장 된 bulk AlN 단결정의 열 산화 공정에 관한 연구 (A study on the thermal oxidation process of bulk AlN single crystal grown by PVT)

  • 강효상;강승민
    • 한국결정성장학회지
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    • 제30권5호
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    • pp.168-173
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    • 2020
  • AlN의 열 산화 공정에서 발생하는 거동 및 메커니즘을 확인하기 위해 bulk AlN 단결정에 대해 대기분위기에서 온도에 따라 열처리를 수행하였다. 800℃의 온도에서 bulk AlN의 본격적인 산화 및 Al-oxide 들의 성장이 일어난 것을 확인하였고, 온도가 증가함에 따라 산소 성분의 wt%가 증가하는 반면 질소 성분의 wt%는 감소하는 경향을 보였다. 900℃에서 열처리하는 경우, 성장 된 Al-oxide은 이웃한 Al-oxide와 merging되어 α-Al2O3 다결정을 형성하기 시작했다. 1000℃의 온도에서 열처리하는 동안, 육각 피라미드 형 α-Al2O3 다결정이 명확히 형성되었음을 확인하였다. X-선 회절 패턴 분석을 통해 bulk AlN의 온도에 따른 표면 결정 구조의 변화를 자세히 조사하였다.

무선 센서용 표면탄성파의 3 차원 모델링 (3D modeling of a surface acoustic wave for wireless sensors)

  • 트렌 녹 쿵;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.111-111
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    • 2009
  • In this work, we discuss simulation of surface acoustic wave device using Comsol Multiphysics. The structure SAW device based on piezoelectric thin film aluminum-nitride (AlN) on silicon was simulated. Some parameters of SAW device such as surface velocity, displacement of piezoelectric thin film were evaluated by software. Many modes and shapes of wave are also discussed in this paper. For evaluation physical parameters of AlN piezoelectric layer, the SAW resonator was modeled and simulation results were also compared with experiment results. we simulated arid evaluated the surface Rayleigh wave of AlN thin film on silicon substrate. Results simulation and experiment showed the surface velocity of AlN thin film was about 5200 m/s and shape of surface wave was also displayed. This paper has also proposed as method to study SAW characteristic of piezoelectric thin film and found out measurement values accurately of film such as stiffness matrix, piezoelectric matrix. These values are very important in calculation and design SAW device or MEMS device based on AlN piezoelectric layer.

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이연에 의한 $\beta$$-사이알론의 열분해 (Thermal Decomposition of $\beta$$-Sialon by Graphite)

  • 최상흘;이희철;이종진;서규식
    • 한국세라믹학회지
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    • 제24권5호
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    • pp.453-460
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    • 1987
  • β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)+C(s)+N2(g)→β2-sialon(metastable)+β3-sialon(stalbe phase) β2-sialon(s)+C(s)+N2(g)→β3-sialon(s)+AlN(s)+α-Al2O3(s)+15R(s)+SiO(g)+Al2O(g)+CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

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무선 화학센서용으로 다결정 AlN 위에 성장된 나노결정질 ZnO 막의 특성 (Characteristics of nanocrystalline ZnO films grown on polyctystalline AlN for wireless chemical sensors)

  • 레티송;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.252-252
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    • 2009
  • In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

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2 GHz 대역 RF 대역통과 필터 응용을 위한 AlN 압전 박막을 이용한 FBAR 소자 (FBAR Device with Thin AlN Piezoelectric Film for 2 GHz RF Bandpass Filter Applications)

  • Giwan Yoon;Munhyuk Yim;Dongkyu Chai;Kim, Sanghee;Kim, Jongheon
    • 한국정보통신학회논문지
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    • 제7권2호
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    • pp.250-254
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    • 2003
  • 본 논문에서는 2GHz 대역 RF 대역통과 필터 응용을 위한 FBAR 소자에 대한 연구를 발표한다. 본 연구의 FBAR 소자는 크게 상부 및 하부 전극 사이에 압전체(AlN)가 삽입되어 있는 공진부와 SiO2/W이 여러층으로 적층되어 있는 음향반사층 두 부분으로 구성되어 있다. RF sputtering 방법으로 증착된 AlN 박막은 c축이 기판에 수직한 정도가 우수한 c축 우선 배향성을 갖는다. 이때 결정립(grain)은 길고 얇은 주상형(columnar)을 보인다. 뿐만아니라, 우수한 품질계수(4300)와 반사손실(37.19 dB)도 얻어졌다.

새로운 공정을 이용한 AIN 체적 탄성파 소자의 제작 및 다양한 금속 전극막에 따른 주파수 응답 특성 분석 (Fabrication of AIN-based FBAR Devices by Using a Novel Process and Characterization of Their Frequency Response Characteristics in terms of Various Electrode Metals)

  • 김보현;박창균;박진석
    • 전기학회논문지
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    • 제56권5호
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    • pp.915-920
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    • 2007
  • AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

고 열방사 투명 고분자 합성막 연구 (A Study on Transparent Polymer Composite Films with High Emissivity)

  • 김정환;신동균;서화일;박종운
    • 반도체디스플레이기술학회지
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    • 제12권1호
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    • pp.29-33
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    • 2013
  • We have fabricated transparent polymer composite films with high thermal emissivity, which can be used for heat dissipation of transparent electronics. PMMA (poly(methyl methacrylate)) solution with high transparency and thermal emissivity is mixed with various fillers (carbon nanotubes (CNTs), aluminum nitride (AlN), or silicon carbide (SiC)) with high thermal conductivity. We have achieved the thermal emissivity as high as 0.94 by the addition of CNTs. Compared with the PMMA film on glass, however, the addition of AlN or SiC is shown to rather decrease the thermal emissivity. It is also observed that the thickness of the PMMA film does not affect its thermal emissivity. To avoid any degradation of the thermal conductivity, therefore, the PMMA film thickness is desirable to be $1{\mu}m$. There also exists a tradeoff between the optical transmittance and thermal conductivity on the selection of the amount of fillers.

Enhanced Performance of Induction Cookers by the Use of Polymer Composites

  • Nam, Yoon-Jae;Lee, Dong-Ki;Kwon, Jong-Han;Shin, K.H.;Lim, S.H.
    • Journal of Magnetics
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    • 제15권3호
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    • pp.123-127
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    • 2010
  • The use of a cooling fan in an induction cooker raises a reliability issue due to the attraction of dust causing a malfunction of the cooling fan and also increases the noise level and power consumption of the device. The purpose of this study is to attempt to solve these problems by molding the Cu coil of an induction cooker with polymer composites that have a low electrical conductivity but a high thermal conductivity. Among the several polymer composites tested in this study, an aluminum nitride-based composite showed the best performance. The results show that the new induction cooker with the molded composite can operate for an extended period of time without the use of a cooling fan. A further advantage of this new type of induction cooker is that the temperature of the substance in the cooking pot increases more rapidly, indicating an increased efficiency of the induction cooker.