• Title/Summary/Keyword: Aluminum Doped Zinc Oxide

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Influence of Surface Texturing on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Lee, Jaeh-Yeong;Shim, Joong-Pyo;Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.4
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    • pp.461-465
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    • 2011
  • An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

The studies on synthesis of aluminum oxide and boron oxide co-doped zinc oxide(AZOB) powder by spray pyrolysis (분무열분해법(Spray Pyrolysis)에 의한 알루미늄 산화물과 보론 산화물이 함께 도핑된 산화아연(AZOB: $Al_2O_3$ and $B_2O_3$ Co-doped Zinc Oxide)의 분말 제조에 대한 연구)

  • Kim, Sang Hern
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.4
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    • pp.731-739
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    • 2014
  • Aluminum and boron co-doped zinc-oxide(AZOB) powders as transparent conducting oxide(TCO) were prepared by spray pyrolysis at $900^{\circ}C$. The micron-sized AZOB particles were prepared by spray pyrolysis from aqueous precursor solutions for aluminium, boron, and zinc. The micron-sized AZOB particle after the spray pyrloysis underwent post-heat treatment at $700^{\circ}C$ for 2 hours and it was changed fully to nano-sized AZOB particle by ball milling for 24 hours. The size of primary AZOB particle by Debye-Scherrer Equation and surface resistance of AZOB pellet were measured.

Efficient Organic Light-emitting Diodes with Aluminum-doped Zinc Oxide Anodes (알루미늄 도핑된 산화아연 양극을 적용한 고효율 유기발광다이오드)

  • Lee, Ho-Nyeon;Lee, Young-Gu;Jung, Jong-Guk;Lee, Seung-Eui;Oh, Tae-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.8
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    • pp.711-715
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    • 2007
  • Properties of organic light-emitting diodes (OLEDs) with aluminum-doped zinc oxide (ZnO:Al) anodes showed different behaviors from OLEDs with indium tin oxide (ITO) anodes according to driving conditions. OLEDs with ITO anodes gave higher current density and luminance in lower voltage region and better EL and power efficiency under lower current density conditions, However, OLEDs with ZnO:Al anodes gave higher current density and luminance in higher voltage region over about 8V and better EL and power efficiency under higher current density over $200mA/cm^2$. These seemed to be due to the differences in conduction properties of semiconducting ZnO:Al and metallic ITO. OLEDs with ZnO:Al anodes showed nearly saturated efficiency under high current driving conditions compared with those of OLEDs with ITO anodes. This meant better charge balance in OLEDs with ZnO:Al anodes. These properties of OLEDs with ZnO:Al anodes are useful in making bright display devices with efficiency.

A Study on the Dependency of Pulsed-DC Sputtered Aluminum-doped Zinc Oxide Thin Films on the Reverse Pulse Time (Pulsed-DC 스퍼터링에서 Reverse Pulse Time에 따른 AZO 박막의 특성 변화에 관한 연구)

  • Ryu, Hyungseok;Zhao, Zhenqian;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.4
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    • pp.32-36
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    • 2018
  • For various oxygen($O_2$) to argon(Ar) gas ratio, aluminum-doped zinc oxide(AZO) films were deposited for 3 min at different duty ratio by changing reverse pulse times. As the duty ratio increased, the thickness of the AZO film decreased and the sheet resistance increased. It can be concluded that When sputtering AZO Thin film, oxygen interfered with sputtering. When the reverse time was increased, the thickness of AZO was proportional to the real sputtering time and decreased. From the optical transmittance and sheet resistance, it was possible to obtain a higher figure of merits of AZO at a lower reverse pulse time. Even at the short reversed pulse time, it can be concluded that the accumulated charges on the AZO target are completely cleared. At a lower reverse pulse time, pulsed-DC sputtering of AZO is expected to be used instead of DC sputtering in the deposition of transparent conductive oxide(TCO) films without any degradation in thickness and structural/electrical characteristics.

Effects of Annealing Temperature on Properties of Al-Doped ZnO Thin Films prepared by Sol-Gel Dip-Coating

  • Jun, Min-Chul;Koh, Jung-Hyuk
    • Journal of Electrical Engineering and Technology
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    • v.8 no.1
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    • pp.163-167
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    • 2013
  • Aluminum doped zinc oxide (AZO) thin films have been prepared on the glass substrates (Corning 1737) by sol-gel dip-coating method employing zinc acetate and aluminum chloride hexahydrate for the transparent conducting oxide (TCO) applications. 1 at% Al was doped to the ZnO thin films. The effects of post-heating temperature on the crystallization, optical and electrical properties of the AZO films have been investigated. Experimental results showed that post-heating temperature affected the microstructure, electrical resistance, and optical transmittance of the AZO films. From the X-ray diffraction analysis, all films have hexagonal wurtzite crystal structure. Optical transmittance spectra of the AZO films exhibited transmittance higher than about 80% within the visible wavelength region and the optical direct band gap ($E_g$) of these films was increased with increasing post-heating temperature. A minimum resistivity of $2.5{\times}10^{-3}{\Omega}cm$ was observed at $650^{\circ}C$.

Effect of sputtering parameters and targets on properties of ZnO:Al thin films prepared by reactive DC magnetron sputtering (직류 반응성 sputtering법으로 제막된 ZnO:Al 박막의 물성에 미치는 증착조건 및 타겟의 영향)

  • 유병석;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.592-598
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    • 1998
  • AZO(Aluminum doped Zinc Oxide) thin films were fabricated by reactive DC magnetron sputtering method using zinc metal target (Al 2%) and zinc oxide target ($Al_2O_3\;2%$) respectively. The intermediate condition with optimum transmittance and conductivity was obtained by controlling the sputtering parameters. Oxygen gas ratio for this condition was $0.5{\times}10^{-2}~1.0{\times}10^{-2}$ in oxide target and. In case of metal target, this optimum oxygen gas ratio at the applied power of 0.6 kW and 1.0 kW was 0.215~0.227 and 0.305~0.315, respectively. The resistivity of AZO film deposited was obtained $1.2~1.4{\times}10^{-3} {\Omega}{\cdot}$cm as deposited state regardless of target species.

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Optical properties of Al doped ZnO Nanofibers Prepared by electrospinning (전기방사를 이용한 Al이 첨가된 ZnO 나노섬유의 제조 및 광학 특성평가)

  • Song, Chan-Geun;Yoon, Jong-Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.5
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    • pp.205-209
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    • 2011
  • Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

Electrical and optical properties of ZnO:Al thin films prepared by reactive sputtering method (반응성 sputtering법으로 제막된 ZnO : Al 박막의 전기.광학적 특성)

  • 유병석;유세웅;이정훈
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.4
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    • pp.480-492
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    • 1996
  • AZO (Aluminum doped Zinc Oxide) transparent conducting thin films were fabricated by reactive DC mangnetron sputtering method using zinc target containing 2 wt% of Al. Transition range with optimum transmittance and conductivity was obtained by contrlling partial pressure of reactive oxygen gas. Sputtering condition for this transition range could be kept stable by regulating the target voltage. According to XRD analysis, there was only one peak for (002) plane in AZO films and the films deposited in transition range.

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Thermal Stability of Hydrogen Doped AZO Thin Films Prepared by r.f. Magnetron Sputtering

  • Park, Yong-Seop;Lee, Su-Ho;Kim, Jung-Gyu;Ha, Jong-Chan;Hong, Byeong-Yu;Lee, Jun-Sin;Lee, Jae-Hyeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.699-700
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    • 2013
  • Aluminum and hydrogen doped zinc oxide (AZHO) films were prepared by r.f. magnetron sputtering. The structural, electrical, and optical properties of the AHZO films were investigated in terms of the annealing conditions to study the thermal stability. The XRD measurements revealed that the degree of c-axis orientation was decreased and the crystallintiy of the films was deteriorated by the heat treatment. The electrical resistivity was significantly increased when the films were annealed at higher temperature. Although the optical transmittance of AHZO films didn't highly changed by heat treatment, the optical band gap was reduced, regardless of annealing temperature and duration. The thermal stability of AHZO films was worse compared to AZO films.

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Property analysis of Hafnium doped Aluminum-Zinc-Oxide films (Hf의 도핑에 따른 Al-Zn-O 박막의 물성 분석)

  • Lee, Sang-Hyuk;Jun, Hyun-Sik;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.1149-1150
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    • 2015
  • In this study, hafnium was doped into aluminum zinc oxide (AZO) films were deposited on glass and Si substrates at room temperature via co-sputtering by varying the electric power applied to the Hf target. The properties of deposited Hf-doped AZO films, such as crystalline structure, optical transmittance, and band gap were analyzed using various methods such as X-ray diffraction (XRD) and UV/visible spectrophotometer. The experimental results confirmed that the abovementioned properties of Hf-AZO films strongly depended on the Hf sputtering power.

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