• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1262-1263
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• 2008

Recently film-typed dye sensitized solar cell(DSC) attracts much attention with increasing applications for its flexibility and transparency. The ZnO:Al thin film, which serves mainly as transparent conducting electrode, Aluminium-doped zinc oxide(ZnO:Al) thin film has emerged as one of the most promising transparent conducting films since it is inexpensive, mechanically stable, and highly resistant to deoxidation. In this paper ZnO:Al thin film was deposited on the polyethylene terephthalate(PET) substrate by the capacitively coupled r. f. magnetron sputtering method. The effects of gas pressure and r. f. discharge power on the morphological, electrical and optical properties of ZnO:Al thin film were studied. Especially the variation in substrate thickness after sputtering and surface morphology of the substrate were investigated and clarified. The results showed that the film deposited on the PET substrate at r. f. discharge power of 180 W showed the minimum resistivity of about $1.5{\times}10^{-3}{\Omega}-cm$ and a transmittance of about 93%.

• Journal of Advanced Marine Engineering and Technology
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• 제38권10호
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• pp.1200-1205
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• 2014

The effect of nanofluids on the heat transfer performance of a pulsating heat pipe has been experimentally investigated. Water-based diamond nanofluid and aluminium oxide ($Al_2O_3$) nanofluid were tested in the concentration range of 0.5-5%. The pulsating heat pipe was constructed using clear Pyrex tubes of 1.85 mm in inner diameter in order to visualize the pulsating action. The total number of turns was eight each for heated and cooled parts. The supply temperatures of heating water and cooling water were fixed at $80^{\circ}C$ and $25^{\circ}C$ respectively. The liquid charging ratio of the nanofluid was 50-70%. The test results showed that the case of 5% concentration of diamond nanofluid showed 18% increase in heat transfer rate compared to pure water. The case of 0.5% concentration of $Al_2O_3$ nanofluid showed 24% increase in heat transfer rate compared to pure water. But the increase of $Al_2O_3$ nanofluid concentration up to 3% did not show further enhancement in heat transfer. It is also observed that the deposited nanoparticles on the tube wall played a major role in enhanced evaporation of working fluid and this could be the reason for the enhancement of heat transfer by a nanofluid, not the enhanced thermal conductivity of the nanofluid.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.484-485
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• 2011

반사방지(Anti-Reflection, AR) 특성은 태양전지, LED, 광검출기 등의 광전소자와 디스플레이의 효율과 투과도를 향상시키기 위해 적용되고 있다. 또한 최근에 네비게이션, 스마트폰의 보급 증가로 인해 소형 디스플레이에 지문방지와 동시에 반사방지 기능을 갖는 필름이 사용되고 있다. 현재 적용되고 있는 반사방지 필름은 다층박막 코팅으로 형성된 필름[1]으로 생산단가와 박막의 내구성 및 신뢰성에 문제점을 가지고 있다. 이런 문제점을 해결하기 위해 나노구조로 제작 되는 반사방지 필름에 관한 연구가 활발히 진행되고 있다[2]. 나노구조로 형성된 반사방지 구조는 moth-eye 구조라고 하며, 기본 원리는 원뿔 형태를 형성된 나노 구조를 통해 공기와 나노구조 사이의 유효 굴절률을 서서히 변화시켜 반사를 줄이는 것이다. 그러므로 moth-eye 나노구조는 파장 이하의 pitch와 파장 크기의 높이를 갖도록 구조가 제작되어야 한다[3]. Photo-lithography[4], e-beam lithography[5], interference lithography[6], dip-pen nanolithography[7], hybrid nano-patterning lithography[8] 등 여러 가지 방법으로 나노 구조를 제작하고 있으나, 네비게이션이나 스마트폰 등에 적용될 수 있는 대면적으로 제작하기 위해서는 roll-to-roll printing과 같은 대면적 공정을 이용하여 제작하는 것이 필요하다. 본 논문에서는 원통형 알루미늄 rod에 양극산화를 통해 다공성 AAO(anode aluminium oxide) template를 제작하고, roll-to-roll printing 기술을 사용하여 moth-eye 나노구조를 갖는 반사방지 필름을 제작하는 것에 대해 기술하였다.

• 한국재료학회지
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• 제30권8호
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• pp.399-405
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• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• 한국결정성장학회지
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• 제9권3호
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• pp.320-326
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• 1999

금속 Al과 산화물{{{{{Al}_{2}{O}_{3}}}}}를 사용하여 Al의 직접질화법에 의한 ALON 합성실험을 행하여 Al의 첨가량의 변화에 따른 질화반응 거동과 ALON 반응소결체의 특성을 조사하였다. Al과{{{{{Al}_{2}{O}_{3}}}}}의 직접질화법에 의한 ALON 합성이 가능함을 확인하였다. 소결온도가 증가함에 따라 ALON의 생성량이 증가하였으며, Al 첨가량 10wt%까지는 $1750^{\circ}C$ 이상의 소결온도에서 ALON상만이 존재하였다. Al 첨가량 13wt% 이상의 조성에서는 약간의 AlN상이 ALON상과 공존하였다. 반응소결체의 밀도는 소결온도가 증가함에 따라 증가하였으나, AlN이 잔존하는 시편의 소결밀도는 $1750^{\circ}C$를 넘으면 약간 감소하였다. Al 첨가량이 증가할수록 입내파괴현상이 현저히 증가하였다.

• 자원리싸이클링
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• 제5권4호
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• pp.17-24
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• 1996

The computer simulation model was established to verify the applicability of smelting reduction concept to treatment of industrial wastes which becomes issue on the enviromental and recycling view point. Computer simulation model provides as following results. The increase of post combustion ratio(PCR) and heat transfer efficiency of PC energy(HTE) is effective ways to save energy. But, in order to increase PCR, recovery efficiency of post combustion energy(HTE) have to be higher than 85% HTE considering refractory life and saving energy together. Coke is most useful fuel source because it shows lowest dependence of PCR and low hydrogen content. The quality of hot metal of current process would be expected to the similar level with that of blast furnace. The utilization of scrap and Al dross can be also possible to maximize the advantages of current process which is high temperature and chemical dilution with hot metal and slag. In case of scrap, energy consumption was slightly increases because of heating up energy of scrap. Consquently, current process concept provides the possibility of intergrating recycles of industrial wastes materials such as EAF slag, coke oven dust, life terminated acidic refractory, aluminium dross and scrap by smelting reduction process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.193-196
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• 1999

Organic electroluminescent devices have attracted a great deal of attention due to thier potential application to full-color flat-panel displays. The 8-hydroxyquinollne Zinc(Znq$_2$) were synthesized successfully from zinc chloride(ZnCl$_2$) and zinc acetate(Zn(C$_2$H$_3$O$_3$)$_2$) as green omitting material. A double-layer ELD consist of an emitting layer of B-hydroxyquinoline Zinc(Znq$_2$) and a hole-transport layer of tai-phenylene diamine(TPD) derivatives sandwiched between an Aluminium(Al) and Indium-Tin-Oxide(ITO) electrodes omitted green light resulting from Znq$_2$. The electroluminescent devices (ELD) exhibited a maximum luminance of 1000cd/$\textrm{cm}^2$ at a driving voltage of 8V and a driving current density of 0.4mA/$\textrm{cm}^2$.

• 한국군사과학기술학회지
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• 제14권6호
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• pp.1186-1191
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• 2011

Composition which was used as a white smoke grenade consists of Aluminium(Al), Hexachloroethane(HCE) and Zinc Oxide(ZnO), etc. there is a possibility of misfire due to long term storage and there are very few reports on the mechanism behind misfire. In this study, an experimental method known as accelerated degradation testing is used to investigate the chemical mechanism resulting in misfire. The mechanism of chemical change during long term storage was analyzed with XRD and FT-IR. Analysis results suggest that a part of HCE consisting of the white smoke grenade disappeared and the other part was combined into $ZnCl_2$, $AlCl_3$, as a recycled intermediate product under closed system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied