• 제목/요약/키워드: Alumina sol

검색결과 164건 처리시간 0.024초

졸-겔법에 의해 제조된 알루미나 여과막의 미세구조 변화 (Change of microstructure at alumina membrane fabricated using sol-gel method)

  • 정훈;황광택
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.34-34
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    • 2003
  • 산업의 발달로 인하여 자원재활용의 문제와 환경 오염 방지와 더불어 에너지 절약에 대한 중요성이 확대되면서 분리 고정을 이용한 환경 오염 방지 및 에너지 절약에 대한 관심이 확대되었다. 세라믹 필터는 열악한 환경에서의 적용 그리고 에너지 소모가 적은 장점을 가지고 있다. 여러종류의 재료들 중에서 기공의 제어가 용이한 알루미나 여과막은 보에하미트(${\gamma}$-AlOOH) 분말과 금속 알콕사이드(ATSB, aluminum tri-sec butoxide)를 사용하여 간단하게 제조할 수 있다. 알루미나는 열처리 론도에 따라 $\alpha$-A1$_2$O$_3$ 결정상 뿐만 아니라 몇 가지 준안정한 결정구조를 가진다. 보에마이트(${\gamma}$-AlOOH)는 45$0^{\circ}C$ 근처에서 미세한 기공을 가진 ${\gamma}$-A1$_2$O$_3$로 상전이 되는 것으로 알려져 있고, 120$0^{\circ}C$보다 낮은 온도에서 열처리하게 되면 미세구조의 변화는 일어나지 않고 약간의 입자 성장만을 수반하는 $\delta$-A1$_2$O$_3$ 또는 $\theta$-A1$_2$O$_3$으로 상전이가 일어난다. $\alpha$-A1$_2$O$_3$로의 상전이는 기공 크기의 변화와 vermicular구조를 가지는 비정상적인 입자성장을 수반하게 된다. 여과막은 기공크기와 분포를 제어하는 것이 매우 중요하므로, 상전이와 미세구조의 변화를 이해하는 것은 중요하다.

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Dielectric and Pyroelectric Properties of Dy-doped BSCT Thick Films by Screen-printing Method

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill
    • Journal of Electrical Engineering and Technology
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    • 제4권4호
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    • pp.527-530
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    • 2009
  • $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$(=BSCT) powders, prepared by the sol-gel method, were doped using $MnCO_3$ as the acceptor and $Dy_2O_3$ as the donor. This powder was mixed with an organic vehicle. BSCT thick films were fabricated by the screen-printing techniques on the alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of the $Dy_2O_3$ amount. As a result of the differential thermal analysis (DTA), the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with an increasing amount of $Dy_2O_3$. The relative dielectric constant and dielectric loss of the BSCT thick film doped $Dy_2O_3$ 0.1mol% were 4637.4 and 1.6% at 1kHz, respectively.

이종층 PZT/PT 후막의 전기적 특성 (Electrical Properties of Heterolayered PZT/PT Thick Films)

  • 남성필;이성갑;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 합동춘계학술대회 논문집 전기물성,응용부문
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    • pp.169-170
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    • 2008
  • The heterolayered PZT/PT thick films were fabricated by two different methods - thick films of the PZT by screen printing method on alumina substrates electrodes with Pt, thin films of $PbTiO_3$ by the spin coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $PbTiO_3$ coating solution at interface of the PZT thick films. The insertion of $PbTiO_3$ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $PbTiO_3$ layers. The leakage current density of the PZT/$PbTiO_3-1$ film is less that $4.41{\times}10^{-9}\;A/cm^2$ at 5 V.

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Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters

  • Lee, Sung-Gap;Lee, Sang-Heon
    • Transactions on Electrical and Electronic Materials
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    • 제4권2호
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    • pp.24-28
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    • 2003
  • (Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184% and 15.62%, respectively.

스크린 프린팅을 이용한 초전형 BSCT 후막의 제작 (Preparation of pyroelectric BSCT thick films by screen-printing)

  • 노현지;이성갑;남성필;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.165-166
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    • 2008
  • $(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Pr_2O_3$ and $Y_2O_3$doping contents. As a result of thermal analysis of $(Ba_{0.6},Sr_{0.3},Ca_{0.1})TiO_3$ powders, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure. The average grain size of the specimens decreased with amount of $Pr_2O_3$ and $Y_2O_3$ contents.

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소결온도에 따른 $Pb(Zr_{x}Ti_{1-x})O_3$ 이종층 후막의 구조적.전기적 특성 (StructuralElectrtonic Properies of $Pb(Zr_{x}Ti_{1-x})O_3$ Heterolayerd Thick Films with Variation of Sintering Temperature)

  • 이성갑;이영희;남성필;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.71-73
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    • 2005
  • Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.

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PZT 후막의 미세 구조적 특성에 조성과 전구체 용액의 코팅이 미치는 영향 (Effect of Composition and Coating of Precursor Solution on a Micro Structural Properties of PZT Thick Films)

  • 박상만;노현지;이성갑
    • 한국전기전자재료학회논문지
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    • 제19권11호
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    • pp.1014-1019
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    • 2006
  • The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.

소결온도에 따른 BSCT 후막의 구조적, 유전적 특성 (Structural and Dielectric Properties of BSCT Thick films with Various Sintering Temperature)

  • 이성갑;이영희;이상헌
    • 한국전기전자재료학회논문지
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    • 제16권4호
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    • pp.304-310
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    • 2003
  • (Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-Bel method, were mixed with organic binder and then BSCT thick films were fabricated by the screen printing techniques on alumina substrates using the BSCT paste. The structural and the dielectric Properties were investigated for various composition ratio and sintering temperature. The second phase appeared in BSCT(40/40/20) thick film sintered at 1450$^{\circ}C$. BSCT thick film thickness, obtained by four printings, was approximately 110∼120$\mu\textrm{m}$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at 1420$^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5㎸/cm, respectively.

Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thick Films Fabricated by Screen-printing Method

  • Lee, Sung-Gap;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • 제7권3호
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    • pp.129-133
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    • 2006
  • Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately $60{\mu}m$. All PZT thick films showed the typical XRD patterns of a polycrystalline rhombohedral structure. And in the PZT thick films sintered at $1100^{\circ}C$, the pyrochlore phase was observed due to the evaporation of PbO. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 445.2 and 1.90 % at 1 kHz, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13 kV/cm, respectively.

PZT/$BaTiO_3$/PZT 다층 후막의 유전특성 (Electrical Properties of PZT/$BaTiO_3$/PZT Multilayer Thick Films)

  • 남성필;이성갑;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.123-124
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    • 2006
  • The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

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