• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.567-568
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• 2006

To investigate the recycle possibility of slurry for the oxide-chemical mechanical polishing (oxide-CMP) application, three kinds of retreated methods were introduced as follows: First, the effects on the addition of silica abrasives and the diluted silica slurry (DSS) on CMP performances were investigated. Second, the characteristics of mixed abrasive slurry (MAS) using non-annealed and annealed alumina ($Al_2O_3$) powder as an abrasive added within DSS were evaluated to achieve the improvement of removal rates (RRs) and within-wafer non-uniformity (WIWNU%). Third, the oxide-CMP wastewater was examined in order to evaluate the possible ways of reusing it. And then, we have discussed the CMP characteristics of silica slurry retreated by mixing of original slurry and used slurry (MOS).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1278-1282
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• 2004

수열처리법으로 nano-sized $CeO_2$ 입자를 $Al_3O_3$ 입자의 표면에 균일하게 코팅하여 $AL_2O_3/O_2$ composite 연마 입자를 제조하었다. 제조된 $Al_2O_3\CeO_2$ composite 입자의 뭍성을 TEM, XRD, zeta potential analyzer 및 particle size analyzer로 측징하였다. $Al_2O_3/CeO_2$ composite 입자와 구성된 슬러리와 비교 시료로서 $Al_2O_3$와 $CeO_2$ 입자를 혼합한 슬러리를 사용하여 thermal oxide film에 대한 연마특성을 평가하였다. 연마슬러리에 포함된 $A1_2O_3/CeO_2$ composite 입자와 $Al_2O_3$와 $CeO_2$ 혼합입자에서 나노 크기의 세리아 입자가 sub-micron 크기의 알루미나 입자의 표면에 균일하게 코팅되므로서 $Al_2O_3$ 단일 성분의 슬러리에 비해 removal rate(RR)는 106 nm/min, WIWNU는 $8\sim9%$, roughness는 $2.6{\AA}$의 향상된 연마 특성을 나타내었다. 알루미나 입자의 불규칙한 형상 때문에 $Al_2O3/CeO_2$ composite 슬러리와 $Al_2O_3$ 와 $CeO_2$ 혼합슬러리의 연마 특성이 비슷한 수준을 나타내었다.