• 제목/요약/키워드: Alumina Abrasives

검색결과 23건 처리시간 0.025초

자동차 제동특성에 미치는 연마제의 영향에 관한 연구 (The Effect of Abrasive particles on Brake Performance)

  • 홍영석;장호
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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    • pp.332-340
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    • 2000
  • Friction properties of automotive brake pads containing different types of abrasivess were investigated. Five different abrasives, including o-quartz, magnesia, magnetite, alumina, zircon, were employed in this investigation and size effects of the abrasives on friction characteristics were also studied using 1, 50, 140$\mu\textrm{m}$ size zircon. Experimental results showed that the hardness and size of these abrasive particles were strongly related to friction behaviors and wear mechanisms. Harder and smaller abrasives showed higher friction coefficient and more wear. The surfaces of friction materials with different sizes of abrasives showed that two different modes of abrasion (two-body and three-body abrasion) appeared during sliding. Considering the above results, abrasive materials were thought to destroy transfer film and the extent of the destruction depends on the types and sizes of abrasive particles. A mechanism of the wear mode transition (two-body to three body abrasive motion) was suggested considering the binding energy and friction energy in terms of abrasive particle size.

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MCP 제조를 위한 미소구멍가공에 관한 연구 (Micro-drilling for fabricating MCP)

  • 이학구;방경구;김포진;이대길
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 추계학술대회 논문집
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    • pp.923-928
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    • 1997
  • An MCP (Microchannel Plate) is a secondary electron multiplier to detect and amplify electrons. An MCP has many rnicrochannels whose diameters range from 10 to 100pm and whose lengths range from 40 to 100times of the diameter. Each microchannel of the MCP amplifies electrons over IOOOtimes by the secondary electron emission. Even though MCPs have high performance for electron amplification, the application of MCPs is limited to high performance electronic equipments because of their high fabricating cost and the limit of increasing their size due to the conventional fabrication process. Therefore, in this work, microchannels of the MCP are manufactured by micro-drilling to reduce the cost of the MCP and to increase their size. Alumina green body with epoxy binder was machined for fabricating microchannels using a high speed air turbine spindle and micro-drills with diamond grinding abrasives. Then alumina MCP was fabricated through the sintering of the machined alumina green body.

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연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가 (Evaluation of Al CMP Slurry based on Abrasives for Next Generation Metal Line Fabrication)

  • 차남구;강영재;김인권;김규채;박진구
    • 한국재료학회지
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    • 제16권12호
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    • pp.731-738
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    • 2006
  • It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

초음파가공에 의한 박판 버 제거기술 (Ultrasonic Deburring of the Thin Plate)

  • 정연택;신용주;김병희
    • 산업기술연구
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    • 제22권A호
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    • pp.37-42
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    • 2002
  • The shearing process for the sheet metal is normally used in the precision elements such as a frame of TFT-LCD or lead frame of IC chips. In these precision elements, the burr formation prevents the system assembly and needs the additional burr removing process. In this study, we have developed the novel ultrasonic deburring system to remove the small burr came from shearing of the sheet metal effectively. The deburring tool is driven by the stepping motor and alumina and SiC particles are used as abrasives. Ultrasonic power and the flowing resistance of the abrasives make ti possible to abrasive the burr.

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CMP 슬러리 연마제의 어닐링 효과 (Annealing effects of CMP slurry abrasives)

  • 박창준;정소영;김철복;최운식;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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    • pp.105-108
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    • 2003
  • CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

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입자유동시스템에 의한 스프링콜릿 버의 디버링 효과 (Effect on the Deburring of Spring Collet Burr by Abrasive Flow System)

  • 김정두
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 1998년도 추계학술대회 논문집
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    • pp.192-197
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    • 1998
  • Abrasive flow machining is useful to abrasive polish a internal or external surface of the free shape dimensional parts, which are used in many fields such as machine tool parts, semi-conductor, and medical component industries. The machining process is that two hydraulic cylinders, which are located surface to surface, are enforce media to the passage between workpiece and tooling part alternately, and then the abrasives included in the media pass the passage and polish the surface of workpiece. The media which is made of polymer and abrasive plays complex have workpiece by its viscoelastic characteristics. In this study, the media for AMF was made by mixing viscoelastic polymer with alumina and silicon carbide abrasive respectively. As a result, alumina include media is also the experiments of deburring the inside burr of in order to analyse the deburring machinability of abrasive flow machining according to various machining parameters which were media flow rate extrusion pressure, passage gap, media viscosity, abrasive content, and abrasive grain size.

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알루미나 고정입자패드를 이용한 텅스텐 CMP 특성 평가 (Evaluation on Tungsten CMP Characteristic using Fixed Abrasive Pad with Alumina)

  • 박범영;김호윤;김형재;서헌덕;정해도
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.206-209
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    • 2002
  • The fixed abrasive pad(FAP) has been introduced in chemical mechanical polishing(CMP) field recently. In comparison with the general CMP which uses the slurry including abrasives, FAP takes advantage of planarity. resulting from decreasing pattern selectivity and defects such as dishing due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of $Al_2$O$_3$-FAP using hydrophilic polymers with swelling characteristic in water and explains the self.texturing phenomenon. It also focuses on the chemical effects on tungsten film and the FAP is evaluated on the removal rate as a function of chemicals such as oxidizer, catalyst, and acid. The removal rate is achieved up to 1000A1min as about 70 percents of the general one. In the future. the research has a plan of the advanced FAP and chemicals in tungsten CMP considering micro-scratch, life-time, and within wafer non-uniformity.

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산화제 및 연마제 첨가를 통한 Nickel CMP 특성 개선 연구 (Improvement of Chemical Mechanical Polishing (CMP) Performance of Nickel by Additions of Abrasive and Various Oxidizers)

  • 최권우;김남훈;서용진;이우선
    • 한국전기전자재료학회논문지
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    • 제18권7호
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    • pp.605-609
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    • 2005
  • Chemical mechanical polishing (CMP) of Ni was performed by the various ratios of four kinds of oxidizers and an addition of alumina powders as an abrasive in each slurry with the different oxidizers. Moreover, the interaction between the Ni and the each oxidizer was discussed by potentiodynamic polarization measurement, in order to compare the effects of Ni-CMP and electrochemical characteristics on the Ni with the different oxidizers. As an experimental result, the removal rate of Ni reached a maximum at 1 $vol\%$ of $H_2O_2$. Also the removal rates of Ni increased with the audition of alumina abrasives in each slurry. The potentiodynamic polarization of Ni under dynamic condition showed a significant difference in electrochemical behavior by addition of $H_2O_2$ in solutions. Ni showed the perfect passivation behavior in solution without $H_2O_2$ under potentiodynamic polarization condition, while active dissolution dominates in solution with the addition of $H_2O_2$. The results indicate that the surface chemistry and electrochemical characteristics of Ni play an important role in controlling the polishing behavior of Ni.

연마입자의 전기적 분극성을 이용한 초정밀연마기술 (Ultraprecision polishing for micro parts using electric polarization effect of abrasive particles)

  • 이승환;김욱배;이상조
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.227-230
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    • 2002
  • New polishing technique for small parts has been tried out using the principle of particle electromechanics. Common fine abrasives such as alumina, diamond, silicon carbide are dielectric materials which are polarized under an electric field, and a non-uniform electric field makes abrasive particles translate along the field line. Using this principle, We make abrasive particles aggregate in the vicinity of the micro tool which is fir the surface finishing of a small part without contact with it. The behavior of particles is optically measured, and the machined depth of glass is examined.

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Etching and Polishing Behavior of Cu thin film according to the additive chemicals

  • Ryu, Ju-Suk;Eom, Dae-Hong;Hong, Yi-Koan;Park, Jum-Yong;Park, Jin-Goo
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.274-278
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    • 2002
  • The purpose of this study was to characterize the reaction of Cu surface with Cu slurry and CMP performance as a function of additives in CMP slurry. The polish rate of Cu was dependent on the kind of organic acids added in slurry. It was considered that polish rate of Cu was dependent on the concentration of carboxylates and mean particle size. When the etchant and oxidant were added in slurry, the highest removal rate and lower etch rate were measured at neutral pH. The addition of etchant, oxidant and pH adjustor played key roles of CMP ability in slurry. As the pH increased, polish rate of Cu was increased by the enhanced the mechanical effects due to effective dispersion of slurry particles. Alumina abrasives was more desirable for 1st step slurry because of high removal rate of Cu and high selectivity ratio among TaN and Cu.

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