• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.784-789
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• 2011

A linear spring model, where the interactions among atoms are assumed to be isotropic and elastic, is employed for the study of non-polar optical phonon scattering in the valence band of alloy semiconductors. The force equations of n atoms are used in the spring model for the consideration of the random distribution of constituent atoms in an alloy semiconductor. When the number of atoms in a unit cell is assumed to be two based on the experimental result, the optical deformation potent is valid for compound semiconductors as well as alloy semiconductors.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.12-13
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• 1992

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.11-22
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• 2015

Pd alloy hydrogen membranes for hydrogen purification and separation need thermal stability at high temperature for commercial applications. Intermetallic diffusion between the Pd alloy film and the porous metal support gives rise to serious problems in long-term stability of Pd alloy membranes. Ceramic barriers are widely used to prevent the intermetallic diffusion from the porous metal support. However, these layers result in poor adhesion at the interface between film and barrier because of the fundamentally poor chemical affinity and a large thermal stress. In this study, we developed Pd alloy membranes having a dense microstructure and saturated composition on modified metal supports by advanced DC magnetron sputtering and heat treatment for enhanced thermal stability. Experimental results showed that Pd-Cu and Pd-Ag alloy membranes had considerably enhanced long-term stability owing to stable, dense alloy film microstructure and saturated composition, effective diffusion barrier, and good adhesive interface layer.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.7-11
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• 2003

Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.276-281
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• 2006

In order to improve the performance of PPFs (Pre-Plated Frames), a PPF that employed a Cu-Sn alloy instead of conventionally used Ni was developed and then its properties were investigated. It was found that the electoplated Cu-Sn alloy layer was a mixture of uniformly distributed fine crystallites, resulting In better wettability and crack resistance than those of Ni PPF. Moreover, as in Cu/Ni/Pd/Au PPF, migration of copper atoms from the base metal to the top of the Cu/Cu-Sn/Pd/Au PPF surface was not found although the Cu-Sn layer itself contained considerable amount of copper. It was expected that, by using the newly developed Cu-Sn PPF, any possible heat generation and signal interrupt caused by an external electro-magnetic field could be reduced because the Cu-Sn layer was paramagnetic, i.e., nonmagnetic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.611-617
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• 2001

The non-polar optical phonon scattering in the valence band depends on the masses, ratios, and types of mixtures of constituent atoms. Therefore, the random distribution of atoms in alloy semiconductors should be considered in the analysis of scattering mechanisms. For this purpose, the force equations of n atoms in a unit cell are expressed in a n x n matrix form to obtain the angular frequencies due to the acoustic and non-polar optical phonons. And, n is then assumed to be infinity. When this work is compared with other results published elsewhere, it is concluded that the independence of atomic displacement or amplitude of oscillation as ell as the infinite number of atoms in a unit cell must be taken into account for the random distribution of atoms in alloy semiconductors.

• Design & Manufacturing
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• v.8 no.1
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• pp.27-30
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• 2014

Alloy tool steel such as SKD11 and SKD61 or high speed tool like SKH51 are used as materials for semiconductor dies. Cavities, curl blocks, pot blocks and housings are made from those materials. To make those parts from alloy tool steel or high speed tool, one utilizes discharge machining, and mechanical machining including machining center, milling, drilling, forming grinding and others. In the process of cutting machining and polishing, the die materials become unsuitable for machining owing to bubbles and foreign substances in them, which hinders production process. Therefore, this study focuses on die material selection criteria, and on analysis and comparison of material characteristics to help companies to solve their problems, make die manufacture less burdensome and extend die life.

• Korean Journal of Materials Research
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• v.14 no.8
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• pp.595-599
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• 2004

We investigated the structural, electrical and magnetic properties of Mn-doped $CuAlO_2$ delafossite ceramics ($CuAl_{1-x}Mn_{x}O_2,\;0\le\;x\;\le0.05$), synthesized by solid-state reaction method in an air atmosphere at a sintering temperature of $1150^{\circ}C$. The solubility limit of Mn ions in delafossite $CuAlO_2$ was found to be as low as about 3 $mol\%$. Positive Hall coefficient and the temperature dependence of conductivity established that non-doped $CuAlO_2$ ceramic is a variable-range hopping p-type semiconductor. It was found that the Mn-doping in $CuAlO_2$ rapidly reduced the hole concentration and conductivity, indicating compensation of free holes. The analysis of the magnetization data provided an evidence that antiferromagnetic superexchange interaction is the dominant mechanism of the exchange coupling between Mn ions in $CuAl_{1-x}Mn_{x}O$ alloy, leading to an almost paramagnetic behavior in this alloy.

• Journal of the Korean institute of surface engineering
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• v.46 no.6
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• pp.248-257
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• 2013

It is generally recognized that thin Pd-Cu alloy films fabricated by sputtering show a wide range of microstructures and properties, both of which are highly dependent on the sputtering conditions. In view of this, the present study aims to investigate the relationship between the performance of hydrogen separation membranes and the microstructure of Pd alloy films depending on sputtering deposition conditions such as substrate temperature, working pressure, and DC power. We fabricated thin and dense Pd-Cu alloy membranes by the micro-polishing of porous Ni support, an advanced Pd-Cu sputtered multi-deposition under the conditions of high substrate temperature / low working pressure / high DC power, and a followed by Cu-reflow heat-treatment. The result of a hydrogen permeation test indicated that the selectivity for $H_2/N_2$ was infinite because of the void-free and dense surface of the Pd alloy membranes, and the hydrogen permeability was 10.5 $ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ for a 6 ${\mu}m$ membrane thickness.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.4
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• pp.149-152
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• 2002

We performed the modeling of the dielectric functions of C $d_{0.77}$M $g_{0.23}$Te by using parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of semiconductor materials. We obtained the values of fitting parameters of the Mg composition 0.23 in the parametric model. From these parameters we could remove interference oscillations to obtain the dielectric function of C $d_{0.77}$M $g_{0.23}$Te alloy film for full 0.5-6.0 eV energy range.y range.