• Title/Summary/Keyword: Alignment &deposition

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Optimum Design and Tolerance Analysis of Multilayer Mirror for Obtaining Characteristic X-ray of 17.5 keV (몰리브덴(Mo) 특성방사선 획득을 위한 다층박막 거울의 최적 설계 및 공차 분석)

  • Chon, Kwon-Su
    • Journal of the Korean Society of Radiology
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    • v.3 no.4
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    • pp.23-28
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    • 2009
  • Monochromatic X-ray can make a medical image of high contrast under a low radiation dose and can be easily generated by combining an X-ray tube and a multilayer mirror. A W/C multilayer mirror was optimally designed for a characteristic X-ray generated from a X-ray tube with Mo target. The d-spacing and the thickness ratio in design parameters were determined under the maximum-reflectivity condition. Tolerances for deposition and alignment of the W/C multilayer mirror were calculated. Within a deposition tolerance of 0.2nm and a alignment tolerance of ${\pm}0.01^{\circ}$, 85% of the theoretical peak reflectivity could be achieved. A multilayer mirror can be widely used for making medical images because of generating high fluence monochromatic X-ray.

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Study of Energy Level Alignment at the Interface of P3HT and PCBM Bilayer Deposited by Electrospray Vacuum Deposition

  • Kim, Ji-Hoon;Hong, Jong-Am;Seo, Jae-Won;Kwon, Dae-Gyoen;Park, Yong-Sup
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.134-134
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    • 2012
  • We investigated the interface of poly (3-hexylthiophene) (P3HT) and C61-butyric acid methylester (PCBM) by using photoelectron spectroscopy (PES). These are the most widely used materials for bulk heterojunction (BHJ) organic solar cells due to their high efficiency. Study of the BHJ interfaces is difficult because the organic films are typically prepared by spin coating in ambient conditions. This is incompatible with the interface electronic structure probes such as PES, which requires ultrahigh vacuum conditions. Study of interface requires gradual deposition of thin films that is also incompatible with the spin coating process. In this work, we used electrospray vacuum deposition (EVD) technique to deposit P3HT and PCBM in high vacuum conditions. EVD allows us to form polymer thin films onto ITO substrate in a step-wise manner directly from solutions and to use PES without exposing the sample to the ambient condition. Although the morphology of the EVD deposited P3HT films observed by optical and atomic force microscopes is quite different from that of the spin coated ones, the valence region spectra were similar. PCBM was deposited on the P3HT film in a similar manner and the energy level alignment between these two materials was studied. We discuss the relation between Voc of P3HT:PCBM solar cell and HOMO-LUMO energy offset obtained in this study.

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Selective Growth of Nanosphere Assisted Vertical Zinc Oxide Nanowires with Hydrothermal Method

  • Lee, Jin-Su;Nam, Sang-Hun;Yu, Jung-Hun;Yun, Sang-Ho;Boo, Jin-Hyo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.252.2-252.2
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    • 2013
  • ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

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Research of Liquid Crystal Alignment on Tantalum Oxide by Using Ion Beam Irradiation (이온빔 조사를 사용한 탄탈륨 산화막에서의 액정 배향에 대한 조사)

  • Lim, Ji-Hun;Oh, Byeong-Yun;Lee, Won-Kyu;Lee, Kang-Min;Na, Hyun-Jae;Park, Hong-Kyu;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.300-300
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    • 2008
  • In this study, the advanced DuoPIGatron-type ion beam (IB) system was applied to inorganic thin film for aligning liquid crystal (LC). LC alignment on $Ta_2O_5$ via IB irradiation was embodied. As a result of IB irradiation, the homogeneously aligned liquid crystal display (LCD) on $Ta_2O_5$ was observed with low pretilt angles. The $Ta_2O_5$ were deposited on indium-tin-oxide coated Coming 1737 glass substrates by rf magnetron sputtering at $200^{\circ}C$. The deposition process resulted in forming very uniform thin film on glass substrates without any defects. To confirm the application of the inorganic alignment on modem display optical devices, we fabricated twisted nematic LCD and measured optical property and response time. As a result of the experiment, the electro optical characteristics of the LCD fabricated by using IB irradiation on $Ta_2O_5$ alignment layer were similar with the other LCD fabricated by using rubbing process.

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Band Alignment at CdS/wide-band-gap Cu(In,Ga)Se2 Hetero-junction by using PES/IPES

  • Kong, Sok-Hyun;Kima, Kyung-Hwan
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.229-232
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    • 2005
  • Direct characterization of band alignment at chemical bath deposition $(CBD)-CdS/Cu_{0.93}(In_{1-x}Ga_x)Se_2$ has been carried out by photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). Ar ion beam etching at the condition of the low ion kinetic energy of 400 eV yields a removal of surface contamination as well as successful development of intrinsic feature of each layer and the interfaces. Especially interior regions of the wide gap CIGS layers with a band gap of $1.4\~1.6\;eV$ were successfully exposed. IPES spectra revealed that conduction band offset (CBO) at the interface region over the wide gap CIGS of x = 0.60 and 0.75 was negative, where the conduction band minimum of CdS was lower than that of CIGS. It was also observed that an energy spacing between conduction band minimum (CBM) of CdS layer and valance band maximum (VBM) of $Cu_{0.93}(In_{0.25}Ga_{0.75})Se_2$ layer at interface region was no wider than that of the interface over the $Cu_{0.93}(In_{0.60}Ga_{0.40})Se_2$ layer.

Pinholes on Oxide under Polysilicon Layer after Plasma Etching (플라즈마 에칭 후 게이트 산화막의 파괴)

  • 최영식
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.1
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    • pp.99-102
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    • 2002
  • Pinholes on the thermally grown oxide, which is called gate oxide, on silicon substrate under polysilicon layer are found and its mechanism is analyzed in this paper. The oxide under a polysilicon layer is broken during the plasma etching process of other polysilicon layer. Both polysilicon layers are separated with 0.8${\mu}{\textrm}{m}$ thick oxide deposited by CVD (Chemical Vapor Deposition). Since broken oxide points are found scattered around an arc occurrence point, it is assumed that an extremely high electric field generated near the arc occurrence point makes the gate oxide broken. 1'he arc occurrence point has been observed on the alignment key and is the mark of low yield. It is found that any arc occurrence can cause chips to fail by breaking the gate oxide, even if are occurrence points are found on scribeline.

EFFECT OF CATALYST ON THE GROWTH OF CARBON NANOTUBES IN CVD PROCESS

  • Yoon, Young-Joon;Song, Kie-Moon;Lee, Se-Jong;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.137-138
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    • 2000
  • We synthesized highly aligned carbon nanotubes by thermal decomposition of acetylene gas using metal catalyst island. The alignment technique in this experiment is a very efficient method because it does not require any treatments before and after catalyst metal deposition. Alignment of nanotubes was dominated by the uniform diameter and the high density of metal catalysts. In the field emission test, the uniform emission spots on phosphor screen were obtained from the nanotubes in spite of non-aligned tube nature.

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Multidirectional Liquid Crystal Orientation by Using Ion Beam Irradiation

  • Ahn, Han-Jin;Kim, Kyung-Chan;Kim, Jong-Bok;Hwang, Byung-Har;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.543-546
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    • 2005
  • We have investigated the alignment ability of multi-domains by using ion beam irradiation on diamond-like carbon (DLC) thin film layers. The DLC thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) system and the low energy ion beam is irradiated from Kaufman type ion gun. The direction of liquid crystal alignment is varied by the direction of Ar ion beam irradiation.

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A Numerical Study on Patterning Process Including a Self-Alignment Technique of a Microdroplet (미세액적의 자기정렬 기법을 포함한 패터닝 공법에 대한 해석적인 연구)

  • Suh, Young-Ho;Son, Gi-Hun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.1
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    • pp.28-38
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    • 2009
  • Numerical simulation is performed for microdroplet deposition on a pre-patterned micro-structure. The liquid-air interface is tracked by a level-set method, which is improved by incorporating a sharp-interface modeling technique for accurately enforcing the matching conditions at the liquid-gas interface and the no-slip condition at the fluid-solid interface. The method is further extended to treat the contact angle condition at an immersed solid surface. The present computation of a patterning process using microdroplet ejection demonstrates that the multiphase characteristics between the liquid-gas-solid phases can be used to improve the patterning accuracy.

A Defect Free Bistable C1 SSFLC Devices

  • Wang, Chenhui;Bos, Philip J.
    • Journal of Information Display
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    • v.4 no.1
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    • pp.1-8
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    • 2003
  • Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.