• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1998년도 추계학술발표강연 및 논문개요집
• /
• pp.157-157
• /
• 1998

• 한국응용과학기술학회지
• /
• 제35권1호
• /
• pp.214-222
• /
• 2018

Alane(aluminum trihydride, $AlH_3$)으로 명명되는 고에너지 물질인 삼수소알루미늄은 수소저장물질로서 뿐만 아니라 우주항공분야의 고체 추진제나 방위산업의 화약제조용으로도 사용될 수 있다. 본 연구는 습식공정을 통하여 합성하고, 에테르를 세밀하게 분리하는 결정화 공정을 통하여 최종 수소화물을 추출하였다. 결정화 공정에서 삼수소알루미늄-에테레이트($AlH_3{\cdot}(C_2H_5)_2O$)가 alane으로 상변이하면서 입자가 성장하고, $85^{\circ}C$에서 2 시간의 결정화 시간이 이루어졌을 때 가장 안정된 결정상이 나타나는 모습을 확인하였다. 최종적으로 추출된 고체상 삼수소알루미늄은 막대모양의 ${\gamma}$-형태가 가장 많은 양을 차지하는 것으로 나타났으며, 크기는 $50-100{\mu}m$ 수준이었다.

• 한국진공학회지
• /
• 제4권S1호
• /
• pp.81-86
• /
• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• 한국수소및신에너지학회논문집
• /
• 제26권6호
• /
• pp.532-540
• /
• 2015

Electrochemical alane ($AlH_3$) production process can be provided as a synthesis route which close a reversible cycle. In this study, growth inhibition of dendrite as key issues in this process was investigated. Main cause of dendrite growth was because Al fine powder separated in consumption process of Al electrode was moved to Pd electrode. In an effort to avoid this, use of glass block with uniform holes was the most effective to inhibit the amount of dendrite to that of $AlH_3$. Furthermore, effects of Al electrode (anode) type and electrolyte concentration were investigated and the optimal condition for inhibiting dendrite formation was proposed.

• 한국전기전자재료학회논문지
• /
• 제22권7호
• /
• pp.549-554
• /
• 2009

Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.

• 한국전기전자재료학회논문지
• /
• 제28권2호
• /
• pp.104-108
• /
• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• 한국재료학회지
• /
• 제8권2호
• /
• pp.131-134
• /
• 1998

$SiO_{2}$ 기판과 dimethylethylamine alane(DMEAA)을 반응소스로 하여 알루미늄을 증착시켜 증착전 전처리 가스 종류와 수소 플라즈마 처리에 따른 증착속도의 차이와 미세구조에 대하여 연구하였다. TiN기판에 증착된 알루미늄의 증착속도는 증착전 수소 가스에 의한 전처리한 경우 아르곤이나 헬륨에 의한 전처리에 비해 빠른 증착속도를 나타내었다. 이르곤 플라즈마 전처리나 플라즈마 전처리 하지 않고 $SiO_{2}$기판에 알루미늄을 증착하였을 경우에 비해 수소 플라즈마 전처리에 의해 알루미튬증착시 잠복기(incubation time)가 감소하였으며 치밀한 미세조직을 얻을 수 있었다.

• 대한화학회지
• /
• 제57권2호
• /
• pp.216-220
• /
• 2013

The hydroalumination of cyclopropane has been investigated using the B3LYP density functional method employing several split-valence basis sets. It is shown that the reaction proceeds via an intermediate weakly bound complex and a four-centered transition state. Calculations at higher levels of theory were also performed at the geometries optimized at the B3LYP level, but only slight changes in the barriers were observed. Structural parameters for the transition state are also reported.

• 전자공학회논문지A
• /
• 제33A권10호
• /
• pp.98-106
• /
• 1996

A thin film of aluminum for ultra large scale integrated circuits metalization has been deposited on TiN and SiO$_{2}$ substrates by plasma assisted chemical vapor deposition using DMEAA (dimenthylethylamine alane) as a precursor. The effects of plasma on surface topology and growth characteristics were investigated. Thermal CVD Al could not be got continuous films on insulating subsrate such as SiO$_{2}$. However, it was found that Al films could be deposited on SiO$_{2}$ substate without any pretreatments by the hydrogen plasma for pyrolysis of DMEAA. Compared to the thermal CVD, PACVD films showed much better reflectance and resistance on TiN and SiO$_{2}$ substrate. We obtained mirror-like PACVD Al film of 90% reflectance and resistance on TiN and SiO$_{2}$ substrates. We obtained mirror-like PACVD Al film of 90% reflectance on TiN substrate. Excellent conformal step coverage was obtained on submicron contact holes ;by the PACVD blanket deposition.

• 한국재료학회지
• /
• 제6권3호
• /
• pp.333-340
• /
• 1996

p-type(100) 실리콘 기판과 TiN(50nm)/Si 기판에 dimethylethylamine alane(DMEAA)을 반응소스로 하여 알루미늄을 증착시켜 증착온도와 유량, 반송가스 종류에 따른 방향성, 증착속도, 미세구조 변화에 대해 연구하였다. 알루미늄의 증착속도는 기판온도, 반송가스 종류 및 유량에 따라 100-650mn/min으로 다양하게 조절되었다. DMEAA의 증착 활성화에너지는 TiN 기판에서는 약 0.leV이었고 Si와 SiO2 기판에서는 각각 약 0.23eV, 0.24eV이었다. 알루미늄 박막의 방향성은 증착속도의 감소에 따라 (200)에서 (111)방향으로 변하였다. 증착된 알루미늄 박막의 불순물 함량은 산소의 경우 0.2at%, 탄소의 경우 1.8at.%이었다. DMEAA 소스에 의한 알루미늄의 증착속도는 반송가스가 Ar 일 때 보다 H2 가스를 사용하면 증착속도가 크게 증가하였으며 이는 반송가스에 의해 SiO2표면의 흡착 H 농도가 증가하고 흡착 H가 소스 가스와 반응하여 핵생성 site 로 작용하는 것으로 생각된다. 알루미늄 박막의 비저항은 표면 미세조직에 크게 영향을 받으며 그 값은 약 3-7$\mu$$\Omega$cm이었다.