• Journal of Power System Engineering
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• v.3 no.2
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• pp.57-63
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• 1999

The fabrication of $Al_2O_3/Al$ composites by pressureless infiltration technique was made to investigate the effects of processing variables such as content of Mg, processing temperature and time on the infiltration behavior of molten Al and microstructure. When the pure Al was infiltrated into mixtures of Mg and $Al_2O_3$ powder, processing temperature required to spontaneous infiltration was decreased and critical processing temperature and Mg content were $700^{\circ}C$ and 3wt% respectively. The content of Mg was found the most powerful variable for infiltration of molten Al. The infiltration ratio increased with Mg content and processing temperature, however the $Al_2O_3/Al$ composites which were fabricated by high Mg content and processing temperature resulted in non uniform dispersion of $Al_2O_3$ particles by excessive interfacial reaction. XRD pattern indicated that $MgAl_2O_4$ and AIN was observed at the interface of $Al_2O_3$ particles and in the Al matrix as reaction products.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.223-231
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• 1992

CaO and ZnO were added to Al2O3-SiO2 binary system respectively as flux, then ZrO2 and TiO2 were applied as nucleating agent to these CaO-Al2O3-SiO2 and ZnO-Al2O3-SiO2 ternary system glass. The transparency could not be kept in CaO-Al2O3-SiO2 system glass, whereas the transparent glass-ceramics were prepared in ZnO-Al2O3-SiO2 system glass containing ZrO2 as the nucleating agent. At this time the optimum heating temperatures for the nucleation and the crystal growth were 78$0^{\circ}C$ and 97$0^{\circ}C$. The sizes of the precipitated crystals in the transparent glass-ceramics were below 0.1 ${\mu}{\textrm}{m}$, and their light transmissibilities were more than 80%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.332-341
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• 1998

Reaction kinetics for the solid - state reaction of ${\alpha}-Al_2O_3$with amorphous $SiO_2$to produce mullite ($3Al_2O_3;{cdot};2SiO_2$) was studied in the temperature range of 1450~$1480^{\circ}C$. Rate of kinetic reaction were determined by using $SiO_2$- coated $Al_2O_3$ compact containing 28.16 wt.% $SiO_2$and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of mullite indicated that the reaction of ${\alpha}-;Al_2O_3$ with $SiO_2$to form $3Al_2O_3\;{\cdot}\;2SiO_2$ start between 1450 and $1480^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation; The activation energy was 31.9 kJ/mol.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.243-249
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• 1993

Coated type Al2O3-SiC composite powders were synthesized by surface modification method. Transformation temperature to $\alpha$-Al2O3 of Al2O3 monolith was 115$0^{\circ}C$ whereas increased to 1200, 1250, 130$0^{\circ}C$ with increment of SiC content to 5, 15, 25wt%. Transformation temperature to $\alpha$-Al2O3 was lowered by $\alpha$-Al2O3 seeding. FTIR data analysis and electron micrographs showed that Al2O3 particles were effectively coated on SiC particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.153-156
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• 2005

원자층 증착 (atomic layer deposit : ALD) 방식으로 증착한 $Al_2O_3$의 건식식각 특성을 연구하였다. 전자 싸이클로트론 공진 (electron cyclotron resonance : ECR) 방식의 건식식각장치에서 source power, bias power, 압력 그리고 $Cl_2$ 가스를 변수로 하여 $Al_2O_3$의 식각속도와 Poly-Si 의 $Al_2O_3$에 대한 선택비를 측정하였다. bias power가 감소할수록 그리고 압력이 증가할수록 $Al_2O_3$의 식각속도는 감소하였고 Poly-Si 의 $Al_2O_3$에 대한 선택비는 증가하였다. 이 특성을 이용하여 TiN/$Al_2O_3$/Poly-Si 구조의 캐패시터와 Periphery 회로영역의 레지스터를 $Al_2O_3$를 식각 정지막으로 이용하여 구현하였다.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.1086-1091
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• 1999

$K^+-{\beta}/{\beta}"-Al_2O_3$ in the ternary system $K_2O-MgO-Al_2O_3$ was directly synthesized by solid state reaction. The phase formation and phase relation were carefully investigated in relation to starting composition, calcining temperature and time, and dispersion medium. The optimal synthetic condition was also examined for the formation of ${\beta}"-Al_2O_3$ phase with a maximum fraction. As a composition range, the mole ratio of $K_2O$ to $Al_2O_3$ was changed from 1:5 to 1:6.2 and the amount of MgO used as a stabilizer was varied from 4.2 wt % to 6.3 wt %. The calcining temperature was selected between $1000^{\circ}C$ and $1500^{\circ}C$. At $1000^{\circ}C$, the ${\beta}/{\beta}"-Al_2O_3$ phases began to form resulted from the combining of ${\alpha}-Al_2O_3$ and $KAlO_2$ and increased with temperature rising. All of ${\alpha}-Al_2O_3$ phase disappeared to be homogenized to the ${\beta}/{\beta}"-Al_2O_3$ phase at $1200^{\circ}C$. Near the temperature at $1300^{\circ}C$, the fraction of ${\beta}"-Al_2O_3$ phase showed a maximum value with the composition of $K_{1.67}Mg_{0.67}Al_{10.33}O_{17}$. At temperatures above $1300^{\circ}C$, the fraction of ${\beta}"-Al_2O_3$ phase decreased gradually owing to $K_2O$ loss caused by a high potassium vapor pressure, and the appropriate calcining time was about 5 hours. Acetone was more effective than distilled water as a dispersion medium for milling and mixing.

• Journal of Powder Materials
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• v.10 no.2
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• pp.97-102
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• 2003

The powder-in sheath rolling was applied to the fabrication of $Al/Al_2O_3$ composite. A stainless steel tube with outer diameter of 12 mm and wall thickness of 1 mm was used as a sheath. Mixture of aluminum powder and $Al/Al_2O_3$ particles of which volume content was varied from 5 to 20 vol.% was filled in the tube by tap filling and then rolled to 75% reduction at ambient temperature. The re]]ed specimen was sintered at 56$0^{\circ}C$ for 0.5 hr. The $Al/Al_2O_3$ composite fabricated by the sheath rolling and subsequent sintering showed the relative density higher than 0.96. The tensile strength of the composite increased with the volume content of $Al_2O_3$ particles, and it reached a maximum of 90 MPa which is 1.5 times higher than unreinforced material. The elongation decreased with the volume content of $Al_2O_3$ particles. It is concluded that the powder-in sheath rolling is an effective method for fabrication of $Al/Al_2O_3$ composite.

• Journal of Powder Materials
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• v.7 no.1
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• pp.35-41
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• 2000

Al2O3$.$SiC particle was prepared was prepared by the self-propagting high temperature sYthesis(SHS) process from a mixture of SiO2, Al and C powders, The fabricated Al2O3$.$SiC particle was applied to 2024Al/(Al2O3$.$SiC)pcomposite as a reinforcement. Aluminum matix composites were fabricares by the powder extrusion method using the synthesized Al2O3$.$SiC particle and commercial 2024Al powder. Theoptimum preparation conditions for Al2O3$.$SiC partticle by SHS process were described. The influence of the Al2O3$.$SiC voiume fraction on the mechanical was composite was also discussed. Despite adiabatic temperature was about 2367K, SHs reaction was completed not by itself, but by using pre-heating. Mean particle size of final particle synthesized was 0.73 ${\mu}$m and most of the particle was smaller than 2${\mu}$m. Elastic modulus and tensile strength of the composite increased with increase the volume fraction of reinforcement but, tensile strength depreciated at 30 vol% of reinforcement.