• Title/Summary/Keyword: AlO/HfO

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Study on Aluminum Frame Surface Cleaning Process for Photomask Pellicle Fabrication (포토마스크 펠리클 제조를 위한 Aluminum Frame 표면 세정공정 연구)

  • Kim, Hyun-Tae;Kim, Hyang-Ran;Kim, Min-Su;Lee, Jun;Jang, Sung-Hae;Choi, In-Chan;Park, Jin-Goo
    • Korean Journal of Materials Research
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    • v.25 no.9
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    • pp.462-467
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    • 2015
  • Pellicle is defined as a thin transparent film stretched over an aluminum (Al) frame that is glued on one side of a photomask. As semiconductor devices are pursuing higher levels of integration and higher resolution patterns, the cleaning of the Al flame surface is becoming a critical step because the contaminants on the Al flame can cause lithography exposure defects on the wafers. In order to remove these contaminants from the Al frame, a highly concentrated nitric acid ($HNO_3$) solution is used. However, it is difficult to fully remove them, which results in an increase in the Al surface roughness. In this paper, the pellicle frame cleaning is investigated using various cleaning solutions. When the mixture of sulfuric acid ($H_2SO_4$), hydrofluoric acid (HF), hydrogen peroxide ($H_2O_2$), and deionized water with ultrasonic is used, a high cleaning efficiency is achieved without $HNO_3$. Thus, this cleaning process is suitable for Al frame cleaning and it can also reduce the use of chemicals.

Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$/Ar Plasma ($BCl_3$/Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성)

  • Um, Doo-Seung;Kang, Chan-Min;Yang, Xue;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.168-168
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    • 2008
  • Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

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Structural Behavior of Mixed $LiMn_2O_4-LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ Cathode in Li-ion Cells during Electrochemical Cycling

  • Yun, Won-Seop;Lee, Sang-U
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.5-5
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    • 2011
  • The research and development of hybrid electric vehicle (HEV), plug-in hybrid electric vehicle (PHEV) and electric vehicle (EV) are intensified due to the energy crisis and environmental concerns. In order to meet the challenging requirements of powering HEV, PHEV and EV, the current lithium battery technology needs to be significantly improved in terms of the cost, safety, power and energy density, as well as the calendar and cycle life. One new technology being developed is the utilization of composite cathode by mixing two different types of insertion compounds [e.g., spinel $LiMn_2O_4$ and layered $LiMO_2$ (M=Ni, Co, and Mn)]. Recently, some studies on mixing two different types of cathode materials to make a composite cathode have been reported, which were aimed at reducing cost and improving self-discharge. Numata et al. reported that when stored in a sealed can together with electrolyte at $80^{\circ}C$ for 10 days, the concentrations of both HF and $Mn^{2+}$ were lower in the can containing $LiMn_2O_4$ blended with $LiNi_{0.8}Co_{0.2}O_2$ than that containing $LiMn_2O_4$ only. That reports clearly showed that this blending technique can prevent the decline in capacity caused by cycling or storage at elevated temperatures. However, not much work has been reported on the charge-discharge characteristics and related structural phase transitions for these composite cathodes. In this presentation, we will report our in situ x-ray diffraction studies on this mixed composite cathode material during charge-discharge cycling. The mixed cathodes were incorporated into in situ XRD cells with a Li foil anode, a Celgard separator, and a 1M $LiPF_6$ electrolyte in a 1 : 1 EC : DMC solvent (LP 30 from EM Industries, Inc.). For in situ XRD cell, Mylar windows were used as has been described in detail elsewhere. All of these in situ XRD spectra were collected on beam line X18A at National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory using two different detectors. One is a conventional scintillation detector with data collection at 0.02 degree in two theta angle for each step. The other is a wide angle position sensitive detector (PSD). The wavelengths used were 1.1950 ${\AA}$ for the scintillation detector and 0.9999 A for the PSD. The newly installed PSD at beam line X18A of NSLS can collect XRD patterns as short as a few minutes covering $90^{\circ}$ of two theta angles simultaneously with good signal to noise ratio. It significantly reduced the data collection time for each scan, giving us a great advantage in studying the phase transition in real time. The two theta angles of all the XRD spectra presented in this paper have been recalculated and converted to corresponding angles for ${\lambda}=1.54\;{\AA}$, which is the wavelength of conventional x-ray tube source with Cu-$k{\alpha}$ radiation, for easy comparison with data in other literatures. The structural changes of the composite cathode made by mixing spinel $LiMn_2O_4$ and layered $Li-Ni_{1/3}Co_{1/3}Mn_{1/3}O_2$ in 1 : 1 wt% in both Li-half and Li-ion cells during charge/discharge are studied by in situ XRD. During the first charge up to ~5.2 V vs. $Li/Li^+$, the in situ XRD spectra for the composite cathode in the Li-half cell track the structural changes of each component. At the early stage of charge, the lithium extraction takes place in the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component only. When the cell voltage reaches at ~4.0 V vs. $Li/Li^+$, lithium extraction from the spinel $LiMn_2O_4$ component starts and becomes the major contributor for the cell capacity due to the higher rate capability of $LiMn_2O_4$. When the voltage passed 4.3 V, the major structural changes are from the $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, while the $LiMn_2O_4$ component is almost unchanged. In the Li-ion cell using a MCMB anode and a composite cathode cycled between 2.5 V and 4.2 V, the structural changes are dominated by the spinel $LiMn_2O_4$ component, with much less changes in the layered $LiNi_{1/3}Co_{1/3}Mn_{1/3}O_2$ component, comparing with the Li-half cell results. These results give us valuable information about the structural changes relating to the contributions of each individual component to the cell capacity at certain charge/discharge state, which are helpful in designing and optimizing the composite cathode using spinel- and layered-type materials for Li-ion battery research. More detailed discussion will be presented at the meeting.

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Production of uranium tetrafluoride from the effluent generated in the reconversion via ammonium uranyl carbonate

  • Neto, Joao Batista Silva;de Carvalho, Elita Fontenele Urano;Garcia, Rafael Henrique Lazzari;Saliba-Silva, Adonis Marcelo;Riella, Humberto Gracher;Durazzo, Michelangelo
    • Nuclear Engineering and Technology
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    • v.49 no.8
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    • pp.1711-1716
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    • 2017
  • Uranium tetrafluoride ($UF_4$) is the most used nuclear material for producing metallic uranium by reduction with Ca or Mg. Metallic uranium is a raw material for the manufacture of uranium silicide, $U_3Si_2$, which is the most suitable uranium compound for use as nuclear fuel for research reactors. By contrast, ammonium uranyl carbonate is a traditional uranium compound used for manufacturing uranium dioxide $UO_2$ fuel for nuclear power reactors or $U_3O_8-Al$ dispersion fuel for nuclear research reactors. This work describes a procedure for recovering uranium and ammonium fluoride ($NH_4F$) from a liquid residue generated during the production routine of ammonium uranyl carbonate, ending with $UF_4$ as a final product. The residue, consisting of a solution containing high concentrations of ammonium ($NH_4^+$), fluoride ($F^-$), and carbonate ($CO_3^{2-}$), has significant concentrations of uranium as $UO_2^{2+}$. From this residue, the proposed procedure consists of precipitating ammonium peroxide fluorouranate (APOFU) and $NH_4F$, while recovering the major part of uranium. Further, the remaining solution is concentrated by heating, and ammonium bifluoride ($NH_4HF_2$) is precipitated. As a final step, $NH_4HF_2$ is added to $UO_2$, inducing fluoridation and decomposition, resulting in $UF_4$ with adequate properties for metallic uranium manufacture.

Development of Nitric Acid Free Desmut Solution for the Aluminum Alloy in Alkaline Etching and Acid Desmut Processes (Aluminum 합금소재의 알칼리에칭 공정으로 발생한 Smut 제거를 위한 무질산 혼합산용액 개발)

  • Choo, Soo-Tae;Choi, Sang Kyo
    • Clean Technology
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    • v.9 no.2
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    • pp.57-61
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    • 2003
  • A novel nitric acid-free desmut solution has been developed to remove smut, which is produced from a NaOH etching, on the surface of aluminum alloy metal in metal surface treatment processes. Comparing with the performance of 5% $HNO_3$ desmut solution, the mixed acid solution containing 2% $H_2O_2$, 0.5% HF, and 10% $H_2SO_4$ shows the same effect of smut removal for aluminum alloy samples of A16061 and A15052. To examine the surface alterations of the aluminum samples, in addition, the surface analysis is carried out with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

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Characteristics of Tantalum Powder by Conditions of After Treatment (후처리 조건에 따른 탄탈륨 분말의 특성)

  • 윤재식;박형호;배인성;김병일
    • Journal of Powder Materials
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    • v.10 no.5
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    • pp.344-347
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    • 2003
  • Pure tantalum powder has been produced by combining Na as a reducing agent, $K_2$TaF$_{7}$ as feed material, KCl and KF as a diluent in a stainless steel (SUS) bomb, using the method of metallothermic reduction. And we examined various types of after-treatment that affect the high purification of powder. A significant amount of impurities contained in recovered powder was removed in various conditions of acid washing. In particular, 20% (HCl + HNO$_3$) was effective in removing heavy metal impurities such as Fe, Cr and Ni, 8% H$_2$SO$_4$ + 8% $Al_2$(SO$_4$)$_3$ in removing fluorides such as K and F from non-reactive feed material, and 2% $H_2O$$_2$ + 1 % HF in removing oxides that formed during reaction. Significant amounts of oxygen and part of light metal impurities could be removed through deoxidation and heat treatment process. On the other hand, because it is difficult to remove completely heavy metal impurities such as Fe, Cr, and Ni through acid washing or heat treatment process if their contents are too high, it is considered desirable to inhibit these impurities from being mixed during the reduction process as much as possible.

Effect of Surface Treatments of on the Microtensile Bond Strength of Resin Composite to Composite after aging Conditions (시효처리 후의 컴포지트에 대한 레진 컴포지트의 미세 인장 결합강도에 표면처리가 미치는 효과)

  • Yoo, Min-Jin;Her, Mi-Ja;Kim, Hee-Lyang;Yu, Mi-Kyung;Lee, Kwang-Won
    • Journal of Dental Rehabilitation and Applied Science
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    • v.26 no.3
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    • pp.339-347
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    • 2010
  • Enhancement of bond strength between new and old composite usually requires increasing the surface roughness to promote mechanical interlocking. This study evaluated the effect of different surface treatments on repair bond strength of resin composite after aging condition. Air abrasion with Al2O3, chairside silicacoating, and silanization provided higher resin-resin bond strength values compared to control group and HF group. Air abrasion is necessary to repair a resin restoration and additional application of silane seems to have good effects on bond strength.

The High Temperature Oxidation Behavior of Diffusion Aluminized MarM247 Superalloy

  • Matsunaga, Yasuo;Matsuoka, Akira;Nakagawa, Kiyokazu
    • Corrosion Science and Technology
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    • v.2 no.1
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    • pp.53-57
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    • 2003
  • The MarM247 based superalloy (8wt.%Cr- 9wt.%Co- 3wt.%Ta- 1.5wt.%Hf- 5.6%wt.Al- 9.5wt.%W- Bal. Ni) specimens were diffusion aluminized by for types of pack cementation methods, and their coating structure and their high temperature oxidation resistance were investigated. The coated specimens treated at 973K in high aluminum concentration pack had a coating layer containing large hafunium rich precipitates, which were originally included in substrate alloy. After the high temperature oxidation test in air containing 30 vol.% $H_2O$ at 1273K ~ 323K, the deep localized corrosion which reached to the substrate were observed along with these hafnium rich precipitates. On the other hand, the coated specimens treated at 1323K using low aluminum concentration pack showed the coating layer without the large hafunium rich precipitates, and after the high temperature oxidation test at 1273K for 1800 ksec, it did not show the deep localized corrosion. The nickel electroplating before the aluminizing forms thick hafnium free area, and its high temperature oxidation resistance were comparable to platinum modified aluminizing coatings at 1273K.

UHV Materials (초고진공계재료)

  • 박동수
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.24-24
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    • 1998
  • 반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

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이중 터널막을 사용한 엔지니어드 터널베리어의 메모리 특성에 관한 연구

  • Son, Jeong-U;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.198-198
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    • 2010
  • 전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 Si3N4/HfAlO (3/3 nm)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 제 1 터널 산화막(Si3N4)의 두께를 wet etching 시간 (0, 10, 20 sec)에 따른 메모리 특성을 비교 분석하였다.

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