• 한국재료학회지
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• 제10권1호
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• pp.90-96
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 배향성 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로서 sputtering 방식으로 증착되는 Ti와 TiN이 적층된 구조인 Ti/TiN이 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하였고, $400^{\circ}C,\;N_2$ 분위기에서 열처리하면서 면저항의 변화를 조사하였다. Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 10nm 이상이면 우수한 Al <111> 배향성을 나타냈으며 Al-Ti 반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. Ti와 Al사이에 TiN을 적용함에 의해 Al <111> 배향성은 나빠지나 Al-Ti 반응에 의한 면저항의 증가는 억제할 수 있었다. Ti/TiN underlayer의 경우, 우수한 Al <111> 배향성을 확보하기 위한 Ti의 최소두께는 20nm이었고, Al-Ti 반응을 억제하기 위한 TiN의 최소두께는 20nm이었다.

• ETRI Journal
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• 제24권4호
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• pp.270-279
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• 2002

We present a self-consistent numerical method for calculating the conduction-band profile and subband structure of AlGaN/GaN single heterojunctions. The subband calculations take into account the piezoelectric and spontaneous polarization effect and the Hartree and exchange-correlation interaction. We calculate the dependence of electron sheet concentration and subband energies on various structural parameters, such as the width and Al mole fraction of AlGaN, the density of donor impurities in AlGaN, and the density of acceptor impurities in GaN, as well as the electron temperature. The electron sheet concentration was sensitively dependent on the Al mole fraction and width of the AlGaN layer and the doping density of donor impurities in the AlGaN. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.431-434
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• 2012

In this paper, heat-releasing sheets made of AlN powder and acryl binder as thermoset were prepared using tape casting method. The crystal structure and morphology, the thermal properties as nonvolatile solid content and thermal conductivity, and the surface resistance of heat-releasing sheet were measured by using X-ray diffractometer, field emission-scanning electron microscopy, thermo gravimetric analyzer and laser flash instrument, and surface resistance meter. It was proved that thermal conductivity is greatly affected by the content of binder in heat-releasing sheet. Superior thermal conductivity above 3.5 W/mK and suface resistance were obtained at heat-releasing sheet with above 90% of AlN powder.

• 한국진공학회지
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• 제9권4호
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• pp.394-399
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• 2000

Underlayer의 종류 및 두께가 Al 박막의 texture 및 면저항 변화에 미치는 영향을 연구하였다. Al의 underlayer로는 ionized physical vapor deposition(I-PVD)에 의해 제조된 Ti와 I-PVD Ti 위에 metalorganic chemical vapor deposition(MOCVD)에 의해 제조된 TiN을 적층한 구조가 사용되었으며, 각각에 대해 두께를 변화시키면서 Al 박막의 배향성, 면저항을 조사하고, $400^{\circ}C$, $N_2$분리기에서 열처리하면서 면저항의 변화를 조사하였다. I-PVD Ti만을 Al의 underlayer로 사용한 경우, Ti두께가 5 nm이어도 Al 박막이 우수한 <111> 배향성을 나타내었으나, Al-Ti반응 때문에 열처리 후 Al 배선의 면저항이 크게 상승하였다. I-PVD 와 Al 사이에 MOCVD TiN을 적용함에 의해 Al <111> 배향성의 큰 저하없이 Al-Ti 반응에 의한 면저항의 증가를 억제할 수 있었으며, MOCVD TiN의 두께가 4 nm 이하일 때 특히 우수한 Al <111> 배향성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제25권6호
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• pp.462-466
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• 2012

In this paper, heat-releasing composite sheets made of AlN, graphite, Al powder and acryl binder as thermoset were prepared using tape casting method. The crystal structure, morphology, thermal conductivity of heat-releasing composite sheet were measured by using X-ray diffractometer, field emission-scanning electron microscopy and laser flash instrument. It was found thermal conductivity of sheet was decided by solid content, composition including AlN, graphite, Al in heat-releasing composite sheets. As a result, 4.56 W/mK of thermal conductivity could be obtained by using LFA 447.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1999년도 춘계학술대회논문집
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• pp.157-160
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• 1999

Aluminum 4343(filler thickness ; 10${\mu}{\textrm}{m}$/Al 3N03(core 80${\mu}{\textrm}{m}$)/Al 4343(filler 10${\mu}{\textrm}{m}$) clad sheet which is recently developed as brazing sheet materials for automotive condensers was fabricated by castinglongrightarrowhot rollinglongrightarrowcold rollinglongrightarrowintermediate annealing(IA)longrightarrowfinal cold rolling(CR). and the effect of IA/CR conditions on microstructure and sagging resistance were investigated the sheet which were fabricated by optimum conditions (IA'ed at 42$0^{\circ}C$ followed by CR'ed to 20~45%) showed good sagging resistance because the core obtained a coarsely recrystallized grain structure during brazing and consequently inhibited filled alloy penetration into the core.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.81-85
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• 2000

The effects of $NH_3$ flow rate and reactor pressure on Al composition and the interface of AlGaN/GaN heterostructure were studied. Equilibrium partial pressure of Ga and Al over AiGaN alloy was calculated as a function of growth pressure, $NH_3$flow rate and temperature. It was found equilbrium vapor pressure of Al is significantly lower than that of Ga, thus, the alloy composition mainly controlled by Ga partial pressure. We believe that more decomposition of Ga occur at lower $NH_3$ flow rate and higher growth pressure leads to preferred Al incorporation into AlGaN. The alloy composition gradient became larger at AlGaN/GaN heterointerface at higher reactor pressures, higher Al composition and low $NH_3$ flow rate. This composition gradient lowered sheet carrier concentration and electron mobility as well. We obtained an AlGaN/GaN heterostructure with sheet carrier density of ${\sim}2{\times}10^{13}cm^{-2}$ and mobility of 1250 and 5000 $cm^2$/Vs at 300 K and 100 K, respectively.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• 대한전자공학회논문지SD
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• 제47권10호
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• pp.23-28
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• 2010

본 논문에서는 AlGaN/GaN HEMT의 분극에 의한 전기적인 특성과 구조적인 특성에 대해서 분석하였다. 몰 분율, AlGaN barrier 층의 두께의 물리적인 변화에 따라서 이차원 전자가스 채널의 농도 변화가 이루어지는 것을 바탕으로 DC 특성 및 분극을 고려한 최적화된 구조에 대해서 시뮬레이션을 진행하였다. AlGaN의 몰 분율이 0.3 몰에서 0.4 몰로 증가할수록 분극에 의한 bound sheet charge가 16 % 증가하며 그에 따라서 Id-Vd 특성 역시 37% 증가하게 된다. 또한 AlGaN 층의 두께가 17 nm에서 38nm로 증가할수록 Id-Vd의 특성이 증가하다가 임계두께인 39nm에 이르게 되면 AlGaN층의 relaxation에 의해서 급격하게 특성이 나빠지는 것을 알 수 있다.

• 소성∙가공
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• 제12권3호
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• pp.202-207
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• 2003

In order to examine the springback amount and material properties of aluminum alloy sheets (AL1050 and AL5052) in the warm forming which forms the sheet above the room temperature, the stretch bending and draw bending tests and tensile test in various high temperatures are carried out. The warm forming temperature 15$0^{\circ}C$ is a transition in terms of the material properties: over the forming temperature 15$0^{\circ}C$, them $\sigma$$_{YS}$ , $\sigma$$_{TS}$ , E, K, n, etc. are bigger but $\varepsilon$ and plastic strain ratio are smaller. Below the forming temperature 15$0^{\circ}C$, there are no big differences in material properties as the forming temperature changes. AL5052 sheet has more springback effect than AL1050 sheet. While the springbacks of AL5052 and AL1050 sheets show a big reduction over the warm forming temperature 15$0^{\circ}C$ in the stretch bending test, the springback rapidly reduces in the warm forming temperature 15$0^{\circ}C$-20$0^{\circ}C$ for AL5052 sheet and 20$0^{\circ}C$-25$0^{\circ}C$ for AL1050 sheet in the draw bending test.