• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.729-730
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• 2006

The research involves the development of a powder metallurgical route for producing good quality TiAl targets for making physical vapour deposition (PVD) coatings. Mixtures of elemental titanium and aluminium powders were mechanically milled using a novel discus milling technique under various conditions. Hot isotropic pressing (HIP) was then employed for consolidation of the mechanically alloyed powders. A cathodic arc vapour deposition process was applied to produce a TiAlN coating. Microstructural examination was conducted on the target material and PVD coatings, using X-ray diffractometry (XRD), X-ray photoelectron spectrometry (XPS) and scanning electron microscopy (SEM). It has been found that combining mechanical alloying and HIP enable us to produce fairly good quality of TiAl based target. The PVD coatings obtained from the TiAl target showed very high microhardness values.

• 한국세라믹학회지
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• 제30권4호
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• pp.309-315
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• 1993

Gas pressure sintering is a promising process in various densification methods of high strength Si3N4 ceramics. Environmental influences on gas pressure sintering of Si3N4 was investigated with the variationof packing powder, specimen container and N2 gas pressure. The specimens had higher density, larger weight loss and inhomogeneous color in graphite specimen container than in SN26 crucible. The variations of sintering densities in various packing powders (Si3N4, SN26, AlN, BN) were very small but SiC powder was synthesised in graphite crucible with Si3N4 packing powder, aluminium oxynitride compounds were synthesised in SN26 crucible with AlN packing power. Also N2 gas pressure over 20kg/$\textrm{cm}^2$ reduced the densification of Si3N4 in one step-gas pressure sintering. As the result of two step-gas pressure sintering at 700kg/$\textrm{cm}^2$ for 15min., relative density of 99.9% and 3-point bending strength of 1090MPa and dense microstructure of 3~4${\mu}{\textrm}{m}$ grain size were obtained.

• 한국재료학회지
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• 제17권10호
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• pp.560-566
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• 2007

AlN plates were fabricated by hot pressing at $1700-1900^{\circ}C$ using yttria and alumina (3 and $10\;{\mu}m$ particle size) powders as additives and characterized: density, thermal conductivity, transverse rupture strength, and grain size measurement by SEM and EDS. Density values of $3.31-3.34\;g/cm^3$ are largely attributed to hot pressing of powder mixtures in carbon mold under $N_2$ atmosphere which caused effective degree of oxygen removal from yttrium-aluminate phase expected to form at $1100^{\circ}C$. The grain size of hot pressed AlN was almost homogeneous, with size approximately from 3.2 to $4.0\;{\mu}m$ after hot pressing. $Al_2O_3$ powder of $3\;{\mu}m$ particle size resulted in better transverse rupture strength and finer grain size compared to $10\;{\mu}m$ $Al_2O_3$ powder. The thermal conductivity of AlN ranged between $83-92.7\;W/m{\cdot}K$ and decreased with $Al_2O_3$ addition. Fine grain size is preferred for better mechanical properties and thermal conductivity.

• 한국분말재료학회지
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• 제19권1호
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• pp.25-31
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• 2012

In this study, a high energy ball milling process was employed in order to improve the densification of direct nitrided AlN powder. The densification behavior and the sintered microstructure of the milled AlN powder were investigated. Mixture of AlN powder doped with 5 wt.% $Y_2O_3$ as a sintering additive was pulverized and dispersed up to 50 min in a bead mill with very small $ZrO_2$ beads. Ultrafine AlN powder with a particle size of 600 nm and a specific surface area of 9.54 $m^2/g$ was prepared after milling for 50 min. The milled powders were pressureless-sintered at $1700^{\circ}C-1800^{\circ}C$ for 4 h under $N_2$ atmosphere. This powder showed excellent sinterability leading to full densification after sintering at $1700^{\circ}C$ for 4 h. However, the sintered microstructure revealed that the fraction of yitttium aluminate increased with milling time and sintering temperature and the newly-secondary phase of ZrN was observed due to the reaction of AlN with the $ZrO_2$ impurity.

• 한국세라믹학회지
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• 제43권10호
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• pp.646-652
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• 2006

Several oxynitride glasses were fabricated by means of adding $Si_3N_4$ powders as nitrogen source to Ca-Al-Si-O-N (CAS) and Mg-Al-Si-O-N (MAS) glass powders, and heat-treated in graphite crucible at 1600$^{\circ}C$ for 1 h. The physical and mechanical properties as well as impact resistance were generally increased and compared with each other. The impact resistance properties of those manufactured glasses were evaluated by DOP (depth of penetration) method which is a way to analyze armor materials. There were two means to be used herein; the copper jet impacted at hyper velocity by exploding K2l5 warhead and tungsten heavy alloy (WHA) impact bar at high velocity by firing in 30 mm solid propellent gun. The impact resistance properties against copper jet were increased and then decreased with increasing nitrogen content, while those against WHA bar were not changed apparently with nitrogen content.

• 한국세라믹학회지
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• 제48권5호
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• pp.418-425
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• 2011

In this study, a high energy ball milling process was introduced in order to improve the densification of direct nitrided AlN powder. The sintering behavior and thermal conductivity of the AlN milled powder was investigated. The mixture of AlN powder and 5 wt% $Y_2O_3$ as a sintering additive was pulverized and dispersed by a bead mill with very small $ZrO_2$ bead media. The milled powders were sintered at $1700^{\circ}C-1800^{\circ}C$ for 4 h under $N_2$ atmosphere. The results showed that the sintered density was enhanced with increasing milling time due to the particle refinement as well as the increase in oxygen contents. Appropriate milling time was effective for the improvement of thermal conductivity, but the extensive millied powder formed more fractions of secondary phase during sintering, resulted in the decrease in thermal conductivity. The AlN powder milled for 10min after sintering at $1800^{\circ}C$ revealed the highest thermal conductivity, of 164W/$m{\cdot}K$ in tne densified AlN sintered at $1800^{\circ}C$.

• Advances in nano research
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• 제13권1호
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• pp.13-28
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• 2022

The pumpability of the grouts is significant issue in concept of the rheological and workability properties during penetrating to voids and cracks. To improve the fluidity features of the grout mixes, the usage of Colloidal Nano Particular Powders (CNPPs) with mineral additives such as fly ash (FA) can contribute. Therefore, the main purpose of this study can be explained as investigating the usage effects of four types of Colloidal Nano Particular Powders (n-TiO₂, n-ZnO, n-Al₂O₃ and n-SiO₂) as nano additives on the rheological, workability and bleeding properties of cement-based grout incorporated with fly as. Test results showed that the usage of FA in the grout samples positively contribute to increase on the fluidity of the grout samples as expected. The dilatant behavior was observed from the results for all mixes. Observing the effect of nano-sized additives in such cement-based grout mixtures with high fluidity has presented remarkable effects in this study.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• 한국세라믹학회지
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• 제59권
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• pp.338-349
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• 2020

Large scale with high-purity hexagonal aluminum nitride nanoparticles (AlN NPs) was synthesized using DC thermal plasma arc discharge method (TPAD). Argon gas was used as the plasma forming gas, while ammonia (NH₃) gas was used as the reactive gas, which was fed into the reactor at a constant flow rate of 5 LPM. In order to optimize the process for high yield, the experiments were carried out at various plasma input powers, such as 1.5, 3.0, and 4.5 kW. Following the optimization, to examine the influence of using pure nitrogen gas, an experiment was also carried out in the nitrogen ambience. The phase identification and structural determination of the synthesized NPs were carried out using XRD and Raman spectroscopic analyses. While the morphology, particle size, and elemental compositions of the synthesized NPs were observed from SEM, HRTEM, XPS, and EDX analyses. The photoluminescence response was confirmed from the PL spectrum. The PL emission peaks observed around 440 nm (2.8 eV) and 601 nm (2.07 eV), respectively, which correspond to the UV blue and red band emissions of both AlN and Al/AlN NPs. The results show that the synthesized nano-AlN NPs exhibit excellent crystallinity with a high yield of approximately 210 g/h. The current plasma technology can be regarded as a perfect potential process for developing nano-AlN powders with improved efficiency.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.