• E2M - 전기 전자와 첨단 소재
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• 제12권8호
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.162-167
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• 2015

To investigate the effect of fluoro groups substitution on poly(p-phenylenevinylene) derivatives, poly(2,3,5,6- tetrafluoro-p-phenylenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene), PCTF-PPV, and poly[2,3,5,6-tetrafluoro-p-phenylenevinylene-alt-2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene], PMTF-PPV, were synthesized by the well-known Wittig condensation polymerization process. To compare the influences of fluoro groups, no fluoro groups containing model polymers, poly(p-phenylenevinylene-alt-N-ethylhexyl-3,6-carbazolevinylene), PCPPPV and poly[p-phenylenevinylene-alt-2-methoxy-5-(2-ethylhexyloxy)-p-phenylenevinylene], p-PMEH-PPV, were also synthesized. The resulting polymers were completely soluble in common organic solvents and exhibited good thermal stability up to 300℃. The polymers showed UV-visible absorbance and photoluminescence (PL) in the ranges of 259~452 nm and 500~580 nm, respectively. The tetrafluorophenyl containing PCTF-PPV and PMTF-PPV showed relatively red-shifted PL peaks at 521 nm and 580 nm, respectively, compared to that of non-fluoro groups containing polymers (PCP-PPV: 500 nm and p-PMEH-PPV: 539 nm). The single-layer light-emitting diode was fabricated in a configuration of ITO/polymer/Al. Electroluminescene (EL) emissions of PCP-PPV, PCTF-PPV, p-PMEH-PPV and PMTF-PPV were shown at 507, 524, 556, and 616 nm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.116-119
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• 2000

The advantage of plasma-sprayed coating is their good resistance against thermal shock due to the porous state of the coated layer with a consequently low Youngs modules. However, the existence of many pores with a bimodal distribution and a laminar structure in the coating reduces coating strength and oxidation protection of the base metals. In order to counteract these problems, there have been many efforts to obtain dense coatings by spraying under low pressure or vacuum and by controlling particle size and morphology of the spraying materials. The aim of the present study is to survey the effects of the HIP treatment between 1100 and 130$0^{\circ}C$ on plasma-sprayed oxide coating of A1$_2$O$_3$, A1$_2$O$_3$-SiO$_2$ on the metal substrate (type C18N10T stainless steel). These effects were characterized by phase identification, Vickers hardness measurement, and tensile test before and after HIPing, These results show that high-pressure treatment has an advantage for improving adhesive strength and Vickers hardness of plasma- sprayed coatings.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.373-374
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• 2007

We have fabricated polymer light-emitting diodes(PLED) in a structure of Glass/ITO/PVK/Al. Poly(N-vinylcabazole) (PVK) was deposited on the ITO glass with the spin coating method. PVK thickness is respectively 500nm, 300nm, 250nm and 200nm with the spin coter rotation speed of 2000, 3000, 4000 and 5000rpm. V-I, wavelength-transmittance, P-L and SEM of the fabricated devices were measured. From the result of P-L measurement, it was kept the optic properties of PVK raw powder when PVK thickness is 250nm. The knee-voltage of PVK PLED with 250nm thickness was 7V.

• 한국재료학회지
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• 제18권10호
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• pp.547-551
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• 2008

Crack-free joining of $Si_3N_4\;and\;Al_2O_3$ using 15 layers has been achieved by a unique approach introducing Sialon polytypoids as a functionally graded materials (FGMs) bonding layer. In the past, hot press sintering of multilayered FGMs with 20 layers of thickness $500{\mu}m$ each has been fabricated successfully. In this study, the number of layers for FGM was reduced to 15 layers from 20 layers for optimization. For fabrication, model was hot pressed at 38 MPa while heating up to $1700^{\circ}$, and it was cooled at $2^{\circ}$/min to minimize residual stress during sintering. Initially, FGM with 15 layers had cracks near 90 wt.% 12H / 10 wt.% $Al_2O_3$ and 90 wt.% 12H/10 wt.% $Si_3N_4$ layers. To solve this problem, FEM (finite element method) program based on the maximum tensile stress theory was applied to design optimized FGM layers of crack free joint. The sample is 3-dimensional cylindrical shape where this has been transformed to 2-dimensional axisymmetric mode. Based on the simulation, crack-free FGM sample was obtained by designing axial, hoop and radial stresses less than tensile strength values across all the layers of FGM. Therefore, we were able to predict and prevent the damage by calculating its thermal stress using its elastic modulus and coefficient of thermal expansion. Such analyses are especially useful for FGM samples where the residual stresses are very difficult to measure experimentally.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.159-160
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• 2012

지난 30년 동안 플래시 메모리의 주류 역할을 하였던 부유 게이트 플래시 메모리는 40 nm 기술 노드 이하에서 셀간 간섭, 터널 산화막의 누설전류 등에 의한 오동작으로 기술적 한계를 맞게 되었다. 또한 기존의 비휘발성 메모리는 동작 시 높은 전압을 요구하므로 전력소비 측면에서도 취약한 단점이 있다. 그러나 이러한 문제점들을 기존의 Si기반의 소자기술이 아닌 새로운 재료나 공정을 통해서 해결하려는 연구가 최근 활발하게 진행되고 있다. 특히, 플래시 메모리의 중요한 구성요소의 하나인 터널 산화막은 메모리 소자의 크기가 줄어듦에 따라서 SiO2단층 구조로서는 7 nm 이하에서 stress induced leakage current (SILC), 직접 터널링 전류의 증가와 같은 많은 문제점들이 발생한다. 한편, 기존의 부유 게이트 타입의 메모리를 대신할 것으로 기대되는 전하 포획형 메모리는 쓰기/지우기 속도를 향상시킬 수 있으며 소자의 축소화에도 셀간 간섭이 일어나지 않으므로 부유 게이트 플래시 메모리를 대체할 수 있는 기술로 주목받고 있다. 특히, TBM (tunnel barrier engineered memory) 소자는 유전율이 큰 절연막을 적층하여 전계에 대한 터널 산화막의 민감도를 증가시키고, 적층된 물리적 두께의 증가에 의해 메모리의 데이터 유지 특성을 크게 개선시킬 수 있는 기술로 관심이 증가하고 있다. 본 연구에서는 Si3N4/Ta2O5를 적층시킨 staggered구조의 tunnel barrier를 제안하였고, Si기판 위에 tunnel layer로 Si3N4를 Low Pressure Chemical Vapor Deposition (LPCVD) 방법과 Ta2O5를 RF Sputtering 방법으로 각각 3/3 nm 증착한 후 e-beam evaporation을 이용하여 게이트 전극으로 Al을 150 nm 증착하여 MIS- capacitor구조의 메모리 소자를 제작하여 동작 특성을 평가하였다. 또한, Si3N4/Ta2O5 staggered tunnel barrier 형성 후의 후속 열처리에 따른 전기적 특성의 개선효과를 확인하였다.

• 한국막학회:학술대회논문집
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• 한국막학회 2004년도 Proceedings of the second conference of aseanian membrane society
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• pp.86-89
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• 2004

The present study reports the preparation of a compact ZSM-5 membrane showing high thermal stability and high separation factors, especially n-/i-butane isomers at high temperatures. ZSM-5 membrane was prepared on a porous $\alpha$-Al$_2$O$_3$ tube (an average pore diameter, ca. 100 nm) at 18$0^{\circ}C$ by the seed-assisted crystallization method. The XRD and SEM results showed that a thin zeolite layer (ca. 1 ${\mu}{\textrm}{m}$) was formed on the support surface. The single gas permeances of $N_2$, H$_2$, SF$_{6}$, n-butane, and i-butane were taken at 27$0^{\circ}C$. i-Butane permeance hardly changed after repeated thermal treatments up to 40$0^{\circ}C$, indicating the membrane is thermally stable. On the other hand, other single gas permeances increased when the membrane was further dried at 40$0^{\circ}C$, indicating thermal pretreatment at 27$0^{\circ}C$ could not remove all the adsorbed species in the membrane. i-Butane and SF$_{6}$ permeances were significantly lower than the permeances of smaller molecules, indicating that the membrane has a low concentration of defects. The ideal selectivities at 27$0^{\circ}C$ were 61 for $H_2$/i-butane and 47 for $H_2$/SF$_{6}$. The temperature dependency of n/i-butane ideal selectivities and separation factors for an equimolar n/i-butane mixture was studied. The ideal selectivity showed a maximum of 36 at 30$0^{\circ}C$. The separation factors increased with temperature and reached around 12 at 300-40$0^{\circ}C$, which were much higher than those reported in the literature.ature.

• 한국표면공학회지
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• 제40권4호
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• pp.170-174
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• 2007

High Velocity Oxygen Fuel (HVOF) thermal spray coating of nano size WC-Co powder (nWC-Co) has been studied as one of the most promising candidate for the possible replacement of the traditional hard plating in some area which causes environmental and health problems. nWC-Co powder was coated on Inconel 718 substrates by HVOF technique. The optimal coating process obtained from the best surface properties such as hardness and porosity is the process of oxygen flow rate (FR) 38 FMR, hydrogen FR 57 FMR and feed rate 35 g/min at spray distance 6 inch for both surface temperature $25^{\circ}C\;and\;500^{\circ}C$. In coating process a small portion of hard WC decomposes to less hard $W_2C$, W and C at the temperature higher than its decomposition temperature $1,250^{\circ}C$ resulting in hardness decrease and porosity increase. Friction coefficient increases with increasing coating surface temperature from 0.55-0.64 at $25^{\circ}C$ to 0.65-0.76 at $500^{\circ}C$ due to the increase of adhesion between coating and counter sliding surface. Hardness of nWC-Co is higher or comparable to those of other hard coatings, such as $Al_2O_3,\;Cr,\;Cr_2O_3$ and HVOF Tribaloy 400 (T400). This shows that nWC-Co is recommendable for durability improvement coating on machine components such as high speed spindle.

• 한국터널지하공간학회 논문집
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• 제8권4호
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• pp.355-363
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• 2006

본 연구에서는 연약한 지반에 속하는 모래지반과 풍화토가 터널상부에 존재하며 연암층에 위치하는 해저터널을 대상으로 터널 배면의 간극수압이 터널의 안정성에 미치는 영향을 분석하였다. 이를 위해 비배수 조건과 배수조건을 가정하여 연계해석을 수행하였다. 비배수 터널의 경우에도 숏크리트 두께를 달리하여 안정성을 비교하였으며, 배수 터널의 경우는 숏크리트의 투수계수와 공극률을 달리하여 민감도분석을 수행하였다. 해저터널의 안정성은 유광호 등(2000, 2001, 2005)에 의해 제안된 전단강도감소 기법을 사용하여 수치적으로 구해지는 안전율을 사용하였다. 본 연구에서는 수리-역학적 연계해석 시 시공단계별 정상류 상태를 먼저 재현하고 터널의 안전율을 구했다. 연구결과 터널내로의 지하수 유입량을 어느 정도 허용함으로써 오히려 터널의 안정성이 높아짐을 확인할 수 있었다.

• Nuclear Engineering and Technology
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• 제53권12호
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.