• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.403-406
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• 2002

Molecular self-assembled of surfactant viologen are of recent interest because they can from functional electroeds as well as micellar assemblies. which can be profitably utilized for display devices. photoelectrochemical studies and electrocatalysis as electron acceptor or electron mediator[1-3]. Fromherz et al studied the se1f-assembly of thiol and disulfide derivatives of viologens bearing long n-alkyl chains on Au electrode surface[4]. In this study, the electrochemical behavior of self-assembled viologen monolayer has been investigated with QCM, which has been known as nano-gram order mass detector. The self-assembly process of viologen was monitored using resonant frequency$({\Delta}F)$ and resonant resistance(R). The redox process of viologen was observed with resonant frequency$({\Delta}F)$.

• Journal of Korea Foundry Society
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• v.14 no.1
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• pp.28-34
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• 1994

Metallurgical-grade polycrystalline silicon was directionally solidified at growth rates of $0.2{\sim}1.0mm/min$ by using split type, reusable graphite molds which were coated with $Si_3N_4$ powder. The resultant grain sizes of the silicon ingots and the shapes of the solid/liquid(S/L) interfaces were investigated. X-ray diffraction was used to determine the preferred orientation in each of the silicon ingots. The impurity content of the silicon was analyzed and the resistivities of the ingots were measured. During the growth of an ingot, the shape of the S/L interface was concave to the silicon melt, and the resistivity decreased. The presence of Al which can be acting as a carrier, is thought to be the main factor causing such a decrease in resistivity. When a growth rate of 0.2㎜/min was used, the preferred orientation was found to be (111).

• Journal of the Mineralogical Society of Korea
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• v.13 no.1
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• pp.1-14
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• 2000

알루나이트는 포항지역의 제3기 연일층군의 이암 층내의 탄산염 결핵체 주변에서 할로이사이트와 함께 극미립 변질물 (1-2 $\mu\textrm{m}$)로서 산출된다. 알루나이트는 정육면체와 유사한 능면체 결정형을 이루고 침상 내지 단주상의 할로이사이트와 밀접한 공생관계를 이룬다. X-선회절 분석에 의해서 이 알루나이트는 a=6.9897(1) $\AA$, c=17.2327(4)$\AA$, V=728.75(3) $\AA$3의 격자상수값을 갖는 것으로 밝혀졌다. X-선형광된 이 알루나이트의 화학식은 (K0.94N0.06)(Al2.55Fe3+0.45)(SO4)2(OH)6 으로서, 나트로알루나이트 단성분을 6-7 mole%정도 함유하는 것으로 분석되었다. 또한 시차열분석 (TG-DTG-DTA)을 통해서 알루나이트의 승화성 성분들 (H2O와 SO3)의 존재와 함유 정도를 조사하였고, 고온X-선회절분석을 병행하여 이 광물의 OH기의 이탈 반응 (52$0^{\circ}C$)과 고온상으로의 전이 반응 ($600^{\circ}C$ 및 $700^{\circ}C$)을 감정 하였다. K/Ar 법으로 측정된 알루나이트의 생성 연대 ($0.342\pm$0.008 Ma)와 안정동위원소들의 분석 결과 ($\delta$18Oso4=-1.7, $\delta$DSMOW=-31, $\delta$34S=-10.8)는 이 알루미늄 황산염 광물이 연일충군의 융기 이후에 야기된 민물의 유입에 의한 표성기원의 변질작용의 결과로 생성되었음을 지시한다. 알루나이트+할로이사이트 공생군의 침전은 이암 내에서 조성된 강산성 (pH=2-3)의 알루미늄 황산염 용액이 탄산염 결핵체를 만나 반응하여 pH가 국지적으로 증가되어 (pH=4) 과포화되는 과정에 의해서 야기되었다. 컴퓨터를 이용한 Al3+의 포화지수에 관한 화학적 평형 모델링 실험 결과, 알루미늄 황산염 용액으로부터의 알루나이트와 할로이사이트의 침전은 pH=4 및 \ulcornerSO42-=10-4M 조건에서 K+과 Si(OH)4의 농도가 10-4M 이상 유지되어야 가능한 것으로 밝혀졌다.

• Korean Chemical Engineering Research
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• v.55 no.6
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• pp.861-867
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• 2017

In order to improve the capacity and cycling stability of Ni-rich NCA cathode materials for lithium ion batteries, the boron and cobalt were doped in commercial $Li_{1.06}Ni_{0.91}Co_{0.08}Al_{0.01}O_2$ (NCA) powders. Commercial NCA particles are mixed composites such as secondary particles of about $5{\mu}m$ and $12{\mu}m$, and the particle size was decreased by doping boron and cobalt. The initial discharge capacities of the boron and cobalt doped NCA-B and NCA-Co were found to be 214 mAh/g and 200 mAh/g, respectively, which are higher values than that of the raw NCA cathode material. In particular, NCA-Co exhibits the best discharge capacity of 157 mAh/g after 20 cycles, which is probably due to the enhanced diffusion of lithium ion by crystal growth along with the c-axis direction.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.335-340
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• 2001

$Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Korean Journal of Optics and Photonics
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• v.19 no.2
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• pp.150-158
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• 2008

The exact transmission coefficients at the interface between a uniaxial anisotropic medium and an isotropic medium at? oblique incidence are derived by applying the extended Jones matrix method. When the birefringence of the uniaxial anisotropic medium is small ($|n_e-n_o|\;{\ll}\;n_o,\;n_e$), the exact transmission coefficients are compared with those by the conventional extended Jones matrix method by Yeh et al. They showed an excellent agreement with each other. In addition, using the exact transmission coefficients, we calculated the polarization characteristics of a light through a uniaxial medium to an incident light with arbitrary polarization state at? oblique incidence. We compared the transmittances of an unpolarized light through a pair of crossed o-type polarizers by two different methods and calculated the transmittance as the variation of the optical constants of the polarizers to evaluate of the extinction ratio. The polarization analysis method using the exact transmission coefficients can be applied to polarization characteristics of a light through a uniaxial medium with large birefringence as well as to liquid crystals and to optical anisotropic material.

• Journal of the Speleological Society of Korea
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• v.34 no.35
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• pp.32-42
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• 1993

The Paektu-san mountains are geographically situated in the Korea strait to the north of the main peninsula, coordinated between the longitudes of W(127$^{\circ}$15'~128$^{\circ}$00')and E(128$^{\circ}$15'~129$^{\circ}$00'), and between the latitudes of S(41$^{\circ}$15'~42$^{\circ}$00') and N(42$^{\circ}$10'~42$^{\circ}$40'). The volcanic group of the Paektu-san mountains can be devided into 2 main kinds of volcanos by the method investigation, The ashes are mainly made of tremolite, trachte, basalt and pumice, or, a little quartz, labradorite and volcanic glass. These sorts, ratios and forms of the rocks are respectively similar. The Haeven lake is surrounded by 19 peaks. The central volcanic cone is a secant cone in shape, with an altitude of the 1800m to 2749,2m (Chang-kun-bong), an average diameter of 10km, and a shape of an ellipse seen high from the plane. They say there were several eruptions in 1668, 1700 and 1702 A. D. The crystal structure of the rock sample collected at the cave of Mt. Paektu-san is monoclinic. The quantitative analysis of the rock samples in the cave is done by using XRF this time. The chemical compositions by XRF fundamamental parameter analysis is : SiO$_2$: 50.72Wt%, TiO = 2.422Wt%, $Al_2$O$_3$= 17.65Wt%, Fe$_2$O$_3$= 9.371Wt%, CaO = 8.711Wt%, MgO = 4.l19Wt%, MnO = 0.l15Wt%, $K_2$O = 1.369Wt%, Na$_2$O : 3.028Wt% and P$_2$O$_{5}$ = 0.365Wt%. The K-Ar age of the rock sample is also determined to be 0.16Ma. This paper describes some problems experienced in dating young volcanic rocks, and then discusses chemical compositions, X-ray fluorescence analyses and the age of the formation of a lava tunnel such as in Mt. Paektu-san.n.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.437-442
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• 2019

Green $BaSi_2O_2N_2:0.02Eu^{2+}$ phosphor is synthesized through a two-step solid state reaction method. The first firing is for crystallization, and the second firing is for reduction of $Eu^{3+}$ into $Eu^{2+}$ and growth of crystal grains. By thermal analysis, the three-time endothermic reaction is confirmed: pyrolysis reaction of $BaCO_3$ at $900^{\circ}C$ and phase transitions at $1,300^{\circ}C$ and $1,400^{\circ}C$. By structural analysis, it is confirmed that single phase [$BaSi_2O_2N_2$] is obtained with Cmcm space group of orthorhombic structure. After the first firing the morphology is rod-like type and, after the second firing, the morphology becomes round. Our phosphor shows a green emission with a peak position of 495 nm and a peak width of 32 nm due to the $4f^65d^1{\rightarrow}4f^7$ transition of $Eu^{2+}$ ion. An LED package (chip size $5.6{\times}3.0mm$) is fabricated with a mixture of our green $BaSi_2O_2N_2$, and yellow $Y_3Al_5O_{12}$ and red $Sr_2Si_5N_8$ phosphors. The color rendering index (90) is higher than that of the mixture without our green phosphor (82), which indicates that this is an excellent green candidate for white LEDs with a deluxe color rendering index.

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.242-246
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• 2001

The quaternary thiophosphates, $A_2NiP_2S_6$ (A=Rb, Cs), have been synthesized with halide fluxes and structurally characterized by single-crystal X-ray diffraction technique. These compounds crystallize in the space group $C_{2h}^5-P2_1/n$ of the monoclinic system with two formula units in a cell of dimensions a=5.960(2), b=12.323(4), $c=7.491(3)\AA$, $\beta=97.05(3)^{\circ}$, and $V=546.0(3)\AA^3$ for Rb2NiP2S6 and a=5.957(4), b=12.696(7), $c=7.679(4)\AA$, $b=93.60(5)^{\circ}$, and $V=579.7(5)\AA^3$ for $Cs_2NiP_2S_6.$ These compounds are isostructural. The structure of $Cs_2NiP_2S_6$ is made up of one-dimensional $_\infty^1[NiP_2S_6^{2-}]$ chains along the a axis and these chains are isolated by $Cs^+$ ions. The Ni atom is octahedrally coordinated by six S atoms. These Ni$S_6$ octahedral units are linked by sharing three m-S atoms of the $[P_2S_6^{4-}]$ anions to form the infinite one-dimensional $_\infty^1[NiP_2S_6^{2-}]$ chain. For $Cs_2NiP_2S_6$, the magnetic susceptibility reveals an antiferromagnetic exchange interaction below 8K,which corresponds to the Neel temperature ($T_N$). Above $T_N$, this compound obeys Curie-Weiss law. The magnetic moment, C, and ${\theta}forCs_2NiP_2S_6$ are 2.77 B.M., 0.9593 K, and -19.02 K, respectively. The effective magnetic moment obtained from the magnetic data is agreed with the spin-only value of $Ni^{2+}d^8$(2.83 B.M.) system.