• Title/Summary/Keyword: AlN crystal

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Effects of Al2O3 addition on nanocrystal formation and crystallization kinetics in (1-x)Li2B4O7-xAl2O3 glasses

  • Choi, Hyun Woo;Kim, Su Jae;Yang, Hang;Yang, Yong Suk;Rim, Young Hoon;Cho, Chae Ryong
    • Journal of Ceramic Processing Research
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    • v.20 no.1
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    • pp.63-68
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    • 2019
  • We investigated the effects of Al2O3 addition on (1-x)Li2B4O7-xAl2O3 (LBAO; x = 0, 0.005, 0.01, 0.05, 0.07, and 0.1) glasses. The glasses were synthesized by a conventional melt-quench method. Structural transformations of the LBAO glasses were assessed via X-ray diffraction analysis. Estimations of ΔT, KGS = (Tc-Tg)/(Tm-Tc), activation energy, and the Avrami parameter were performed using differential thermal analysis and differential scanning calorimetry. An interpretation of non-isothermal kinetics of the crystallization process is presented using the modified Ozawa equation. The activation energy E increased from 3.3 to 3.5 eV for the LBAO (x < 0.01) glasses whereas those of the LBAO (x > 0.05) glasses slightly increased from 3.75 to 4.05 eV. The exponent n was estimated to be 3.9 ± 0.1 for the LBAO (x < 0.01) glasses and 3.2 ± 0.02 for the LBAO (x > 0.05) glasses. Microstructural characterization of the glassy and crystalline phases using atomic force microscopy was investigated. The effects of Al2O3 on the LBAO glasses include a decreased nucleation rate in the crystallization process and a significantly reduced crystal size.

Petrochemical Study on the Cretaceous Volcanic Rocks in Kageo island, Korea (가거도(소흑산도)의 백악기 화산암류에 대한 암석화학적 연구)

  • 김진섭;백맹언;성종규
    • The Journal of the Petrological Society of Korea
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    • v.6 no.1
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    • pp.19-33
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    • 1997
  • This study reports the results about the petrography and geochemical characteristics of 10 representative volacanic rocks. The Cretaceous volcanic rocks distributed in the vicinity of the Kageo island composed of andesitic rocks, dacitic welded tuff, and rhyolitic rocks in ascending order. Sedimentary rock is the basement in the study area covered with volcanic rocks. Andesitic rocks composed of pyroclastic volcanic breccia, lithic lapilli tuff and cryptocrystallin lava-flow. Most dacitic rocks are lapilli ash-flow welded tuff. Rhyolitic rocks consists of rhyolite tuff and rhyolite lava flow. Rhyolite tuff are lithic crystal ash-flow tuff and crystal vitric ash-flow tuff with somewhat accidental fragments of andesitic rocks, but dacitic rocks. The variation of major and trace element of the volcanic rocks show that contents of $Al_2O_3$, FeO, CaO, MgO, $TiO_2$ decrease with increasing of $SiO_2$. On the basis of Variation diagrams such as $Al_2O_3$ vs. CaO, Th/Yb vs. Ta/Yb, and $Ce_N/YB_N$ vs. $Ce_N$, these rocks represent mainly differentiation trend of calc-alkaline rock series. On the discriminant diagrams such as Ba/La and La/Th ratio, Rb vs. Y + Nb, the volcanic rocks in study area belongs to high-K Orogenic suites, with abundances of trace element and ternary diagram of K, Na, Ca. According to the tectonic discriminant diagram by Wood, these rocks falls into the diestructructive continental margin. K-Ar ages of whole rocks are from andesite to rhyolite $97.0{\pm}6.8~94.5{\pm}6.6,\68.9{\pm}4.8,\61.5{\pm}4.9~60.7{\pm}4.2$ Ma, repectively. Volcanic rocks in study area show well correlation to the Yucheon Group in terms of rock age dating and geochemcial data, and derived from andesitic calc-alkaline magma that undergone low pressure fractional crystallization dominated plagioclase at <30km.

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Characterization of crack self-healing of silicon carbide by hot press sintering (열간가압소결법으로 제조한 탄화규소의 균열자기치유 특성)

  • Kim, Seong-Hoon;Kim, Kyung-Hun;Dow, Hwan-Soo;Park, Joo-Seok;Kim, Kyung-Ja;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.2
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    • pp.62-66
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    • 2016
  • In this study, it was investigated that characteristic of crack-self-healing of hot-pressed SiC. SiC ceramics was sintered with $Al_2O_3$ and $Y_2O_3$ sintering additive by hot press. Sintering was performed in hot-press furnace in flowing argon (Ar), holding for 3 hr under $1950^{\circ}C$ and 50 MPa. The sintered SiC was machined into 3-point bending strength specimen of $3{\times}4{\times}40mm$, and introduced pre-crack by Vickers indentation at 49.6 N. Specimens were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), 3-point bending strength after heat treatment at $1200{\sim}1400^{\circ}C$ for 1~10 hr. The best crack-self-healing ability was achieved 770 MPa 3-point bending strength by heat treatment at $1300^{\circ}C$ for 5 hr.

Synthesis of Al-Doped ZnO by Microwave Assisted Hydrothermal Method and its Optical Property (마이크로파 수열합성법을 이용한 알루미늄이 도핑된 산화아연 합성 및 그 광학적 특성)

  • Hyun, Mi-Ho;Kang, Kuk-Hyoun;Lee, Dong-Kyu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.2
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    • pp.1555-1562
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    • 2015
  • Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

Luminescence Characterization of SrAl2O4:Ho3+ Green Phosphor Prepared by Spray Pyrolysis (분무열분해법으로 제조된 SrAl2O4:Ho3+ 녹색 형광체의 발광특성)

  • Jung, Kyeong Youl;Kim, Woo Hyun
    • Korean Chemical Engineering Research
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    • v.53 no.5
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    • pp.620-626
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    • 2015
  • $Ho^{3+}$ doped $SrAl_2O_4$ upconversion phosphor powders were synthesized by spray pyrolysis, and the crystallographic properties and luminescence characteristics were examined by varying activator concentrations and heattreatment temperatures. The effect of organic additives on the crystal structure and luminescent properties was also investigated. $SrAl_2O_4:Ho^{3+}$ powders showed intensive green emission due to the $^5F_4/^5S_2{\rightarrow}^5I_8$ transition of $Ho^{3+}$. The optimal $Ho^{3+}$ concentration in order to achieve the highest luminescence was 0.1%. Over this concentration, emission intensities were largely diminished via a concentration quenching due to dipole-dipole interaction between activator ions. According to the dependence of emission intensity on the pumping power of a laser diode, it was clear that the upconversion of $SrAl_2O_4:Ho^{3+}$ occurred via the ground state absorption-excited state absorption processes involving two near-IR photons. Synthesized powders were monoclinic as a major phase, having some hexagonal phase. The increase of heat-treatment temperatures from $1000^{\circ}C$ to $1350^{\circ}C$ led to crystallinity enhancement of monoclinic phase, reducing hexagonal phase. The hexagonal phase, however, did not disappear even at $1350^{\circ}C$. When both citric acid (CA) and ethylene glycol (EG) were added to the spray solution, the resulting powders had pure monoclinic phase without forming hexagonal phase, and led to largely enhancement of crystallinity. Also, N,N-Dimethylformamide (DMF) addition to the spray solution containing both CA and EG made it possible to effectively reduce the surface area of $SrAl_2O_4:Ho^{3+}$ powders. Consequently, the $SrAl_2O_4:Ho^{3+}$ powders prepared by using the spray solution containing CA/EG/DMF mixture as the organic additives showed about 168% improved luminescence compared to the phosphor prepared without organic additives. It was concluded that both the increased crystallinity of high-purity monoclinic phase and the decrease of surface area were attributed to the large enhancement of upconversion luminescence.

Preparation of Borosilicate Foamed Glass Body with Sound Absorption Characteristics by the Recycling Waste Liquid Crystal Display Glass (폐 LCD 유리를 이용한 흡음특성을 갖는 붕규산유리발포체 제조)

  • Lee, Chul-Tae
    • Applied Chemistry for Engineering
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    • v.27 no.6
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    • pp.612-619
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    • 2016
  • In this research, an alumino-borosilicate foamed glass with sound absorption property was prepared using the waste borosilicate glass obtained from the recycling process of waste liquid crystal display (LCD) panel. A 100 g of pulverized waste borosilicate glass with the particle size of under 325 mesh, was mixed with 0.3 g (wt/wt) of graphite, each 1.5 g (wt/wt) of $Na_2CO_3$, $Na_2SO_4$ and $CaCO_3$ as a foaming agent, and 6.0 g (wt/wt) of $H_3BO_3$ and 3.0 g (wt/wt) of $Al_2O_3$ as a pore control agent. Following mixture was under the foaming process for 20 minutes at a foaming temperature of $950^{\circ}C$. The result yielded the foaming agent with 45% of the opened porosity and 0.5-0.7 of the sound absorbing coefficient. This alumino-borosilicate foamed glass with the sound absorption property showed excellent physical and mechanical properties such as density of $0.21g/cm^3$, bending strength of $55N/cm^2$ and compression strength of $298N/cm^2$ which can be ideally used as sound absorption materials with heat-resisting and chemical-resisting property.

Properties and Peculiar Features of Application of Isoelectronically Doped $A^2B^6$ Compound-Based Scintillators

  • Ryzhikov, V.;Starzhinskiy, N.
    • Journal of Radiation Protection and Research
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    • v.30 no.2
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    • pp.77-84
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    • 2005
  • The authors submit the data concerning the methods of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, $Me^{III}-metals$ Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within $0.5-10{\mu}s\;and\;30-150{\mu}s$. The afterglow level is less than 0.01% after $10-20{\mu}s$, and the radiation stability is ${\geq}5{\cdot}10^8$ rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities.

Determining the Self-Assembly and Redox Process of a Viologen Monolayer by Electrochemical Quartz Crystal Microbalance (수정진동자를 이용한 Viologen 단분자막의 자기조립화와 산화,환원 반응 측정)

  • Ock, J.Y.;Song, S.H.;Shin, H.K.;Chang, J.S.;Chang, S.M.;Kwon, Y.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.23-27
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    • 2003
  • Molecular self-assembled of surfactant viologen are of recent interest because they can from functional electrodes as well as micellar assemblies, which can be profitably utilized for display devices, photoelectrochemical studies and electrocatalysis as electron acceptor or electron mediator. Fromherz et al studied the self-assembly of thiol and disulfide derivatives of viologens bearing long n-alkyl chains on Au electrode surface. The electrochemical behavior of self-assembled viologen monolayer has been investigated with QCM, which has been known as nano-gram order mass detector. The self-assembly process of viologen was monitored using resonant frequency$({\Delta}F)$ and resonant resistance(R). The redox process of viologen was observed with resonant frequency $({\Delta}F)$.

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Hall Effect of High $T_{c}$ superconductor $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ Thin Film (고온초전도체 $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ 박막의 Hall 효과)

  • 허재호;류제천;김형국;김장환
    • Journal of the Korean Magnetics Society
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    • v.4 no.1
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    • pp.44-47
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    • 1994
  • High $T_{c}$ superconducting $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$ thin film was grown up for c-axis orientation by epitaxial growth method on $LaAlO_{3}$ single crystal substrate. The crystal structures of this thin film were found to be c-axis orientation by X-ray diffraction patterns. Hall effect and resistivity measurements were made by van der Pauw method. Hall resistivity was calculated from the magnetoresistivity by considering thermomagnetic effect. The relation was $pH=p_{s}tan{\alpha}_{n}-QBT\frac{S_s}{K_s}$ The measured Hall resistivity and the calculated one are in good agreement each other.

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Growth and photocurrent properties for ZnO Thin Film by Pulsed Laser Deposition (펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.74-75
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    • 2005
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}cm^{-3}$ and $299cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 3.3973 eV - ($2.69{\times}10^{-4}$ eV/K)$T_2$/(T + 463 K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\triangle$so definitely exists in the $\ulcorner_6$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

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