• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.192.2-192.2
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• 2014

Among various dopant candidates, nitrogen (N) atoms are considered as the most effective dopants to improve the diverse properties of graphene. Unfortunately, recent experimental and theoretical studies have revealed that different N-doped graphene (NGR) conformations can result in both p- and n-type characters depending on the bonding nature of N atoms (substitutional, pyridinic, pyrrolic, and nitrilic). To overcome this obstacle in achieving reliable graphene doping, we have carried out density functional theory calculations and explored the feasibility of converting p-type NGRs into n-type by introducing additional dopant candidates atoms (B, C, O, F, Al, Si, P, S, and Cl). Evaluating the relative formation energies of various binary-doped NGRs and the change in their electronic structure, we conclude that B and P atoms are promising candidates to achieve robust n-type NGRs. The origin of such p- to n-type change is analyzed based on the crystal orbital Hamiltonian population analysis. Implications of our findings in the context of electronic and energy device applications will be also discussed.

• Korean Chemical Engineering Research
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• v.45 no.3
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• pp.209-214
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• 2007

Sr hexaaluminate($Sr_{1-x}La_xMnAl_{11}O_{19-\alpha}$) were prepared by sol-gel method of metal alkoxide with 1-butanol or ethylene glycol as a solvent. The physical properties of prepared hexaaluminates were examined by TG/DTA, XRD and $N_2$ adsorption. When ethylene glycol was used as a solvent, the decomposition reaction and dehydroxylation reaction was observed above $400^{\circ}C$ and the temperature of the formation of a crystal structure of hexaaluminate was also increased resulting in small specific surface area and low catalytic activity of methane compared to Sr-hexaaluminate with 1-butanol.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.63.1-63
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• 2003

Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.77-81
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• 2010

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.682-683
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• 2006

Thermoelectric conversion efficiency of thermoelectric elements can be increased by using a structure combining n-type and p-type semiconductors. From the above point of view, attention was directed at ZnO as a candidate n-type semiconductor material and investigations were made. As the result, a dimensionless figure of merit ZT close to 0.28 (1073K) was obtained for specimens produced by the PCS (Pulse Current Sintering) method with addition of specified quantities of $TiO_2$, CoO, and $Al_2O_3$ to ZnO. It was found that the interstitial $TiO_2$ in the ZnO restrains the grain growth and CoO acts onto the bond between grains. The influence of the inclusion of $TiO_2$ and CoO onto the sintering behavior also was investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.1-13
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• 1995

Cr:A12O3 and Ti:A12O3 single crystals were grown by Czochralski method, and the effects of crystal growth parameters such as pulling rate, rotation rate, dopant and growth atmosphere on crystal quality were investigated. And spectroscopic properties including lasing efficiency were also measured. Single crystals, sized of 20mm in diameter and 100-135mm in length, were successfully grown from the seed of <001> direction. With the doping level of 0.5w/o Cr2O3, pulling rate 2.0mm/hr, rotation rate of 30rpm and inert atmosphere by nitrogen gas, high quality crystals of Cr:A12O3 were grown. While in case of Ti:A12O3 crystals, high quality crystals were grown under the conditions of the doping level of 0.25w/o TiO2, pulling rate of 1.5mm/hr, rotation rate of 30rpm and reducing atmosphere by hydrogen - nitrogen mixed gas. It was confirmed that Cr3+ ion which maintains its ionoc valence during growth easily de-bubbled than Ti4+ ion which changes its valence, Fe3+ ion also has do-bubbling effect to Ti:A12O3 crystal and the reducing atmosphere by 90% N2 - 10% H2 mixed gas gave effective result on the changing of Ti4+ to Ti3+ and de-bubbling. As a result of spectroscopic measurements of Cr:A12O3 crystal, 4A2 →4F2 and 4F1 absorption transitions and E →4A2(R1) and 2A →4A2(R2) fluorenscence transitions were confirmed. And it was measured that wavelengths of laser R1 and R2 transitions were 696±5nm and 692±5nm respectively, line width of these transitions were 12A, and life-time of fluorenscence was 152μsec. In case of Ti:A12O3 crystals, it was confirmed that absortion transition of 4T2→4E and fluorescence transition of 4E→4T2 with wide range of 650-1050nm was occured. And 147μsec of life-time of fluorescence, 125.4 of figure of merit and 9% of laser efficience were also measured.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.145-152
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• 2000

X-ray diffraction method detects change of crystal lattice distance under material surface using diffraction angle 2$\theta$. This technique can be applied to the behavior on slip band and micro crack due to material degradation. The relation between half-value breadth and number of cycle has three stages which constitute rapid decrease in initial number of cycles, slight decrease in middle number of cycles and rapid decrease in final number of cycles. The ratio of half-value breadth takes a constant value on B/B$_{0}$-N diagram with loading condition except early part of fatigue life. The ratio of half-value breadth B/B$_{0}$ with respect to number of cycle to failure N$_{f}$ has linear behavior on B/B$_{0}$-log N$_{f}$ diagram. Therefore, in this paper the estimation of fatigue life by average gradient method has much less estimated mean error than the estimation of fatigue life by log B/B$_{0}$-log N/N$_{f}$ relation.elation.ation.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.