• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.33-33
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• 1998

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.619-625
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• 1997

$Si_3N_4$ powder with 2 wt% $Al_2O_3$ and 6 wt% $Y_2O_3$additives was gas pressure sintered (GPS). Characterization of the mechanical properties was compared with sintering conditions (temperature, pressure, time). Based on experimental result , the optimal condition of gas pressure sintering was found at $1900^{\circ}C$, 3 MPa for 1 hour. It is assumed that mechanical properties were degraded due to the grain coasening effects with increasing temperature or holding time. However, the grain size was decreased with increasing pressure, resulted in better strength, but lower fracture toughness. Present results suggested that optimization of processing parameters was impotant for better mechanical properties of $Si_3N_4$.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.213-217
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• 1997

Magnesium reduction of Mo(N-C6H3-2,6-i-Pr2)2Cl2(DME) in the presence of trimethylphosphine led to a mixture of Mo(N-C6H3-2,6-i-Pr2)(PMe3)2Cl3, 1, and Mo2(PMe3)4Cl4, 2. In solution 1 is slowly air-oxidized to Mo(N-2,6-i-Pr2-C6H3)(OPMe3)(PMe3)Cl3, 3. 1 is chemically inert to carbon nucleophiles (ZnMe2, ZnEt2, AlMe3, AlEt3, LiCp, NaCp, TlCp, NaCp*, MeMgBr, EtMgBr), oxygen nucleophiles (LiOEt, LiO-i-Pr, LiOPh, LiOSPh), and hydrides (LiBEt3H, LiBEt3D). Crystal data for 1: orthorhombic space group P212121, a=11.312(3) Å, b=11.908(3) Å, c=19.381(6) Å, Z=4, R(wR2)=0.0463 (0.1067). Crystal data for 2: monoclinic space group Cc, a=18.384(3) Å, b=9.181(2) Å, c=19.118(3) Å, b=124.98(1)°, Z=4, R(wR2)=0.0228 (0.0568). Crystal data for 3: orthorhombic space group P212121, a=11.464(1) Å, b=14.081(2) Å, c=16.614(3) Å, Z=4, R(wR2)=0.0394 (0.0923).

• Journal of the Korean Society for Heat Treatment
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• v.16 no.6
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• pp.329-334
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• 2003

Microstructure and mechanical properties of $(Ti_{1-x}Alx)N$ films, Produced by the the Ion Beam Sputtering(IBS) method, were studied by changing the Ti, Al contents. The compositions of films determined by RBS were $(Ti_{0.75}Al_{0.25})N$, $(Ti_{0.61}Al_{0.39})N$ and $(Ti_{0.5}Al_{0.5})N$, and XPS binding energies of Ti2P, A12p and N1s shifted to higher energies than those of pure Ti, Al and N, which indicated that nitrides were formed. XRD results indicated that the NaCl structure for $$x{\leq_-}0.39$$ changed into amorphous structure at x=0.5. For films with $$x{\leq_-}0.39$$, the lattice parameter decreased in proportion to the Al content. Nanoindentation hardness value were above HV=3300 at Al content up to x=0.39. However, the hardness of films with x=0.5 abruptly decreased to HV=1800, and this lower hardness values were attributed to different crystal structure. Critical load(Lc) in scratch test showed 23N at x=0.25, 22N at x=0.39 and 22N at x=0.5, which indicated that films with different Al contents showed similar adhesion behavior.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.77-83
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• 2022

A high-hardness tool material is required to reduce extreme abrasive wear when drilling carbon fiber reinforced plastic (CFRP). Single-crystal diamond is the hardest material in the world, but it is very expensive to be used as a cutting tool. Polycrystalline diamond (PCD) is a diamond grit fused at a high temperature and pressure, and diamond-like carbon (DLC) is an amorphous carbon with high hardness. This study compares DLC coatings and PCD inserts to conventional TiAlN-coated tungsten carbide drills. In fiberglass and carbon fiber reinforced polymer drilling, the tool wear of DLC-coated carbide was approximately half that of TiAlN-coated tools, and slight tool wear occurred in the case of PCD insert end drills.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.224-234
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• 1997

In order to make high purity materials including low contents of interstitial impurities, 70 ㎾ electron beam melter was manufactured. The sponge Ti and Ti-6Al-4V alloy were required and melted by electron beam melter. Based on the experimental results of sponge Ti refining by electron beam melting, the purity of Ti was increased for 180 seconds but thereafter did not significantly vary. In addition, it was found that with number of melting, the purity of Ti did and vary but the yield of Ti was decreased. As a results of Ti refining, high purity Ti of 3N (99.9 wt%) could be obtained including interstitial impurities with total contents of which were maximum 900 ppm. From the experimental results of Ti-6Al-4V alloy electron beam melting, the amounts of Al loss could be estimated through thermodynamic data calculated from the regular solution model and the model of solute removal kinetics and the alloy composition calculated from the models was in accord with the experimental composition of the alloy, It took 10 minutes to make Ti-29Al-4V alloy calculated from the model into Ti-6Al-4V alloy and the composition of Ti-6Al-4V alloy was very homogeneous.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.4
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• pp.183-189
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• 2012

Surface treatments and their effects on high temperature properties for the Hastelloy X, which is a promising candidate alloy for high temperature heat-transport system, have been evaluated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods using an arc discharge and a sputtering, were applied, respectively. In addition, a different surface treatment method of the diffusion coating by a pack cementation of Al (aluminiding) was also adopted in this study. To achieve enhanced thermal oxidation resistance at $1000^{\circ}C$ by suppressing the inhomogeneous formation of thick $Cr_2O_3$ crust at the surface region, a study for the surface modification methods on the morphological and structural properties of Hastelloy X substrates has been conducted. The structural and compositional properties of each sample were characterized before and after heat-treatment at $1000^{\circ}C$ under air and He environment. The results showed that the Al diffusion coating showed the more enhanced high temperature properties than the overlay coatings such as the suppressed thick $Cr_2O_3$ crust formation and lower wear loss.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.3
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• pp.103-111
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• 2021

Hexagonal shape Si crystals were grown by the mixed-source hydride vapor phase epitaxy (HVPE) method of mixing solid materials such as Si, Al and Ga. In the newly designed atmospheric pressure mixed-source HVPE method, nuclei are formed by the interaction between GaCl_n, AlCl_n and SiCl_n gases at a high temperature of 1200℃. In addition, it is designed to generate a precursor gas with a high partial pressure due to the rapid reaction of Si and HCl gas. The properties of hexagonal Si crystals were investigated through scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), high-resolution X-ray diffraction (HR-XRD), and Raman spectrum. From these results, it is expected to be applied as a new material in the Si industry.