Material properties of In$_{0.53}$ Ga$_{0.47}$ As$_{0.52}$ Al$_{0.48}$ As MQWs grown on InP substrates by low-temperature molecular beam epitaxy
(InP 기판위에 저온 분자선 에피탁시로 성장된 In$_{0.53}$ Ga$_{0.47}$ As$_{0.52}$ Al$_{0.48}$ As 다중 양자 우물의 특성 평가)
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- Journal of the Korean Institute of Telematics and Electronics D
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- v.35D no.5
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- pp.80-86
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- 1998