• 전기전자학회논문지
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• 제23권3호
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• pp.1033-1037
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• 2019

GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.682-687
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• 2014

We have performed reverse gate bias stress tests on AlGaN/GaN-on-Si Heterostructure FETs (HFETs). The shift of threshold voltage ($V_{th}$) and the reduction of on-current were observed from the stressed devices. These changes of the device parameters were not permanent. We investigated the temporary behavior of the stressed devices by analyzing the temperature dependence of the instabilities and TCAD simulation. As the baseline temperature of the electrical stress tests increased, the changes of the $V_{th}$ and the on-current were decreased. The on-current reduction was caused by the positive shift of the $V_{th}$ and the increased resistance of the gate-to-source and the gate-to-drain access region. Our experimental results suggest that electron-trapping effect into the shallow traps in devices is the main cause of observed instabilities.

• Journal of Electrical Engineering and information Science
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• 제2권4호
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• pp.99-105
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• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1373-1379
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• 1988

본 연구에서는 FDM(finite difference method)을 이용한 수치적 방법을 사용하여 MODFET (MO-dulation doped FET)의 전위 분포와 전자 밀도를 이차원적으로 해석하였다. 일차원적 해석 방법에서는 MODFET의 게이트 부분만을 계산하는 반면, 이차원적 해석 방법은 소오스와 드레인 부분도 계산해줌으로써 일차원적 해석 방법에서 무시되는 기생 효과(parasitic effect)를 고려하여 더 정확한 해석이 가능하였다. 결과로서 스페이스(spacer) 두께와 (n)AlGaAs층의 도핑 농도의 변화에 따른 채널내에서 2DEG(2dimensional electron gas)의 단위 면적에 대한 밀도와의 관계를 정량적으로 제시하였으며 스페이서의 두께가 작아지거나 (n)AlGaAs 층의 도핑 농도가 커질수록 MODFET 채널 내의 전자 밀도가 증가함을 확인하였다.

• 한국진공학회지
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• 제12권4호
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• pp.218-227
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• 2003

AlGaAs/GaAs HBT 에미터 오믹 접촉을 위해 n형 InGaAs에 대한 Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au 오믹 접촉 특성을 조사하였다. Pd/Si/Ti/Pt 오믹 접촉의 경우, 증착 상태에서는 접촉 비저항을 측정할 수 없을 정도의 비오믹 특성을 보였으며, $375^{\circ}C$에서 10초 동안 열처리한 경우 $5\times10^{-3}\Omega\textrm{cm}^2$의 높은 접촉 비저항을 나타내었다. 그러나 열처리 조건을 $425^{\circ}C$, 10초로 변화시킬 경우 $2\times10^{-6}\Omega\textrm{cm}^2$의 낮은 접촉 비저항을 나타내었다. Pd/Si/Pd/Ti/Au 오믹 접촉의 경우, $450^{\circ}C$까지의 열처리 동안에 전반적으로 우수한 오믹 특성을 나타내어 $400^{\circ}C$, 20초의 급속 열처리 조건에서 최저 $3.9\times10^{-7}\Omega\textrm{cm}^2$의 접촉 비저항을 나타내었다. 두 오믹 접촉 모두 오믹 재료와 InGaAs의 평활한 계면을 유지하면서 우수한 오믹 특성을 나타내어, 화합물 반도체 소자의 오믹 접촉으로 충분히 응용 가능하였다. Pd/Si/Ti/Pt 및 Pd/Si/Pd/Ti/Au를 AlGaAs/GaAs HBT의 에미터 오믹 접촉으로 사용하여 제작된 HBT 소자의 고주파 특성을 측정한 결과, 차단 주파수가 각각 63.9 ㎓ 및 74.4 ㎓로, 또한 최대공진 주파수가 각각 50.1 ㎓ 및 52.5 ㎓로 우수한 작동특성을 보였다.