• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.178-178
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• 2008

초소형 박막의 열전 발전모듈은 작은 부피와 한번 설치시 교체없이 지속적인 전원공급으로 소형의 센서 노드에 전원으로 각광 받고 있다. 이에 본 논문에서는 In Plane방식의 PIN Junction의 박막형 열전소자를 제작하여 보았다. 열전 박막인 P-type의 $BiSbTe_3$와 N-type의 $Bi_2Te_3$은 (001)GaAs 기판에 MOCVD(Metal Organic Chemical Vapour Deposition)방식으로 성장하였으며 전극으로는 E-Beam Evaporator를 이용하여 금(Au), 알루미늄(Al)을 사용하였다. 열전박막의 두께는 MOCVD의 성장시간과 온도 MO-x 가스의 압력으로 조절하여 주었다. 제작결과 1Pairs 당 약 $63{\mu}V$/K을 나타내었다.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.313-317
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• 2012

We have evaluated a 1.3 ${\mu}m$ vertical-cavity surface-emitting laser (VCSEL), whose bottom mirror and central active layer were grown by metal organic chemical vapor deposition (MOCVD) and whose top mirror was covered with a dielectric coating, for 10 Gb/s data transmission over single-mode fibers (SMFs). Successful demonstration of error-free transmission of the directly modulated VCSEL signals at data rate of 10 Gb/s over a 10 km-long SMF was achieved for operating temperatures from $20^{\circ}C$ to $60^{\circ}C$ up to bit-error-rate (BER) of $10^{-12}$. The DC bias current and modulation currents are only 7 mA and 6 mA, respectively. The results indicate that the VCSEL is a good low-power consuming optical signal source for 10 GBASE Ethernet applications under controlled environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.811-816
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• 2012

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.1-204.1
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• 2013

Fluorine, the radius of which is close to that of oxygen, could be an appropriate anion doping candidate. A lower lattice distortion could be expected for F doping, compared with Al, Ga, and In doping. F-doped ZnO (FZO) and undoped ZnO nanorods were grown onto glass substrate by the hydrothemal method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0.0 to 10.0 in 2.0 steps. To investigate the effects of the structure and optical properties of FZO nanorods were investigated using X-ray diffraction, UV-visible spectroscopy and photoluminescence (PL). For the PL spectra, the maximum peak position of NBE moves to higher energy, from 0 to 4 at.%. As the doping concentration increases, the maximum peak position of NBE gradually moves to lover energy, from 4 to 10 at.%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.11
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• pp.102-108
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• 2020

The demand for lightweight materials and high-strength steel has rapidly increased to help reduce the weight of a vehicle body; it improves the fuel efficiency of automobiles and provides passenger safety. Additionally, as the material becomes thinner, the demand for its resistance against corrosion becomes higher. Hence, the application of the surface-treated steel sheet has surged rapidly. In this study, a weld bonding experiment using a delta spot welding machine is performed on a thin sheet of a different material (Al6061-T6/GA440). The thickness of the material was kept at 1 mm to reduce the weight of the automobile body parts. Additionally, the purpose of this study is to control the heat input by applying the welding conditions of a multi-stage pressure pattern to improve corrosion resistance shear strength. The analysis of nugget diameter measurement, shear tensile test, and salt spray test was performed to achieve the aim.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.57 no.3
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• pp.205-213
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• 2021

Two specimens of Hemitrygon izuensis (395.8-471.5 mm in disc width), belonging to the family Dasyatidae (Myliobatiformes), were collected from the waters off north-eastern Jeju-do Island in June 2016 and Pohang in August 2019. This species was characterized by having no spots on dorsal side of disc, white ventral tail fold and short preorbital snout length (15.6-18.3% of disc width). This species is similar to H. akajei and H. sinensis reported in Korea, but differs in small denticles on mid-line of dorsal surface of disc (absent in H. izuensis vs. present in H. akajei and H. sinensis), the length of ventral tail fold (28.1-31.0% in H. izuensis vs. 48.0-48.6% in H. akajei vs. 45.0% in H. sinensis), color of ventral tail fold (white in H. izuensis vs. black in H. akajei and H. sinensis) and small tubercles on the posterior part of tail (absent in H. izuensis vs. present in H. akajei and H. sinensis). We suggest a Korean name for H. izuensis as "I-ju-gal-saeg-ga-o-li" following Kim et al. (2019).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.308.1-308.1
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• 2014

반도체에서 양자점이 포함된 나노복합체의 전자적 구조와 성질에 대한 연구는 기본적인 양자 물리적 현상을 이해하고 전자소자 및 광소자의 다양한 응용 분야를 파생할 수 있기 때문에 많은 관심을 갖고 있다. 나노복합체를 구성하는 각각의 양자우물과 양자점에 대한 실험과 이론에 대한 연구는 많이 진행되고 있으며, 양자우물 안에 양자점이 삽입된 나노복합체에 대한 연구는 상대적으로 미흡한 상태이다. 또한 양자우물 안에 자발 형성된 양자점이 삽입된 나노복합체에 대한 전기적 특성 및 광학적 특성에 대한 연구는 많으나, 양자우물 안에 삽입된 양자점에 대한 전자적 구조에 대한 연구는 거의 없다. 양자우물 안에 양자점을 형성한 나노복합체 구조를 사용하여 제작한 전자소자와 광소자의 효율을 향상시키기 위해서는 이 복합 구조의 전자적 성질에 대한 연구가 필요하다. 본 연구에서는 단일 양자우물 안에 자발 형성된 InAs 양자점을 포함한 나노복합체의 전자적 특성을 분석하기 위하여 변형효과와 비포물선효과를 포함한 전자적 부띠 에너지에 대하여 비교 분석하였다. InAs 양자점은 20 nm의 직경을 갖고 있으며, GaAs 기판위에 버퍼층과 AlAs 층을 사용한 양자우물 구조에 삽입되었다. 단일 양자우물 안에 삽입된 양자점의 전자적 구조는 형상 의존 변형효과와 비포물선 효과를 고려한 쉬뢰딩거 방정식을 삼차원 가변 메시 유한차분법을 사용하여 수치해석 방법으로 분석하였다. 수치해석 방법으로 양자우물의 우물 폭의 영향을 받는 양자점의 크기변화에 따라 삼차원적인 전자 및 정공의 부띠 에너지와 기저상태 및 여기 상태의 파동 함수를 계산하였다. 이러한 결과는 나노복합체 안에 형성된 InAs 양자점의 전자적 특성을 이해하는데 도움을 주며, InAs가 포함된 나노복합체를 사용한 전자 소자와 광소자 연구에 기초 자료로 사용될 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.394-394
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• 2013

The spin-orbit interaction has received great attention in the field of spintronics, because of its property and applicability. For instance, the spin-orbit interaction induces spin precession which is the key element of spin transistor proposed by Datta and Das, since frequency of precession can be controlled by electric field. The spin-orbit interaction is classified according to its origin, Dresselhaus and Rashba spin-orbit interaction. In particular, the Rashba spin-orbit interaction is induced by inversion asymmetry of quantum well structure and the slope of conduction band represents the strength of Rashba spin-orbit interaction. The strength of spin-orbit interaction is experimentally obtained from the Shubnikov de Hass (SdH) oscillation. The SdH oscillation is resistance change of channel for perpendicular magnetic field as a result of Zeeman spin splitting of Landau level, quantization of cyclotron motion by applied magnetic field. The frequency of oscillation is different for spin up and down due to the Rashba spin-orbit interaction. Consequently, the SdH oscillation shows the beat patterns. In many research studies, the spin-orbit interaction was treated as a tool for electrical manipulation of spin. On the other hands, it can be considered that the Rashba field, effective magnetic field induced by Rashba effect, may interact with external magnetic field. In order to investigate this issue, we utilized InAs quantum well layer, sandwiched by InGaAs/InAlAs as cladding layer. Then, the SdH oscillation was observed with tilted magnetic field in y-z plane. The y-component (longitudinal term) of applied magnetic field will interact with the Rashba field and the z-component (perpendicular term) will induce the Zeeman effect. As a result, the strength of spin-orbit interaction was increased (decreased), when applied magnetic field is parallel (anti-parallel) to the Rashba field. We found a possibility to control the spin precession with magnetic field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Steel and Composite Structures
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• v.34 no.5
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• pp.681-698
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• 2020

The paper addresses contribution to the modeling and optimization of major machinability parameters (cutting force, surface roughness, and tool wear) in finish dry hard turning (FDHT) for machinability evaluation of hardened AISI grade die steel D₃ with PVD-TiN coated (Al₂O₃-TiCN) mixed ceramic tool insert. The turning trials are performed based on Taguchi's L₁₈ orthogonal array design of experiments for the development of regression model as well as adequate model prediction by considering tool approach angle, nose radius, cutting speed, feed rate, and depth of cut as major machining parameters. The models or correlations are developed by employing multiple regression analysis (MRA). In addition, statistical technique (response surface methodology) followed by computational approaches (genetic algorithm and particle swarm optimization) have been employed for multiple response optimization. Thereafter, the effectiveness of proposed three (RSM, GA, PSO) optimization techniques are evaluated by confirmation test and subsequently the best optimization results have been used for estimation of energy consumption which includes savings of carbon footprint towards green machining and for tool life estimation followed by cost analysis to justify the economic feasibility of PVD-TiN coated Al₂O₃+TiCN mixed ceramic tool in FDHT operation. Finally, estimation of energy savings, economic analysis, and sustainability assessment are performed by employing carbon footprint analysis, Gilbert approach, and Pugh matrix, respectively. Novelty aspects, the present work: (i) contributes to practical industrial application of finish hard turning for the shaft and die makers to select the optimum cutting conditions in a range of hardness of 45-60 HRC, (ii) demonstrates the replacement of expensive, time-consuming conventional cylindrical grinding process and proposes the alternative of costlier CBN tool by utilizing ceramic tool in hard turning processes considering technological, economical and ecological aspects, which are helpful and efficient from industrial point of view, (iii) provides environment friendliness, cleaner production for machining of hardened steels, (iv) helps to improve the desirable machinability characteristics, and (v) serves as a knowledge for the development of a common language for sustainable manufacturing in both research field and industrial practice.