• Transactions of Materials Processing
• /
• v.29 no.5
• /
• pp.257-264
• /
• 2020

This paper is concerned with the influence of the plastic property of the rivet on the numerical prediction of the Self-Piercing Rivet (SPR) Joining. In order to predict the plastic property of the rivet, a ring compression specimen was directly fabricated from the rivet used for the mechanical joining of dissimilar materials, and the FE analysis together with the ring compression test was iteratively carried out by changing the plastic property of the rivet. For reliable FE analysis, a friction coefficient was estimated based on a friction calibration curve, measuring the reductions in inner diameter and height of the ring specimen after the compression test. From each simulation result, the force-displacement curves were then compared from each other so as to obtain the rivet plastic property that shows good agreement with the experimental result. The SPR joining between GA590 1.0t and Al5052 2.0t was conducted, and the numerical prediction was performed with the use of the plastic property evaluated based on the inverse analysis and the one referred from Mori et al. [11]. Comparison of the experiment and the numerical predictions in terms of the interlock and bottom thickness revealed that the reliable evaluation of the plastic property of the rivet is necessary for the trustworthy numerical prediction of the SPR joining.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Journal of the Mineralogical Society of Korea
• /
• v.14 no.1
• /
• pp.39-51
• /
• 2001

공주군 유구면 일대의 화강암질 편마암의 풍화작용에 따른 원소의 거동과 pH와 이차광물과의 관계를 XRF, ICP-AES, ICP-MS를 이용한 원소분석결과를 통하여 검토하였다. 이 지역의 암석은 pH6 내외의 산성환경, 침철석, 아나타제와 같은 다양한 이차광물을 생성하면서 심각한 화학조성의 변화를 초래했다. 주원소의 화학조성을 이용한 풍화지수는 토양층에서 79~88로 모암 중의 사장석이 용해되고 흑운모가 변질되어 캐올리광물의 생성이 활발한 방향으로 풍화작용이 진행되었다. 지표층으로 가면서 Al에 대한 주 원소의 거동은 Si, Ca, Na, K, P가 감소하고 Fe, Ti, Mn이 증가하는 경향을 보이며 pH가 낮은 풍화단면에서 주 원소의 변화량이 더 크다. 이 풍화대에서 Mg은 거의 일정하다. Li, As 모든 전이원소는 pH가 감소함에 따라 증가하며 특히 이들 원소는 Fe의 함량과 비례해서 증가해 침철석과 공침하였거나 표면에 흡착되어 있는 것으로 보인다. Ga은 Fe와 비례하기는 하지만 변화량은 전 풍화단면에서 일정하다. Zr, Mo, Sn, Cd은 pH에 변화에 상관없이 일정한 반면에 Rb, Sr, Ba, Y, Pb, Th, U 등은 감소하는 경향을 보인다. 특히 Rb 과 Sr은 Ca에 비례해서 감소한다. 희토류원소는 전 풍화단면에서 감소하는 경향을 보이는데 $Al_2$$O_3$에 대한 상대적인 변화량을 보면 경희토류원소는 사프롤라이트(saprolite)하부와 상부에서 부화되어 있고 중부 사프롤라이트와 토양층에서 감소하는 반면에 중희토류원소는 사프롤라이트 하부와 상부에서 감소하고 중부사프롤라이트 및 토양층에서 부화되는 경향을 보인다. 전반적으로 희토류원소의 원자번호가 클수록 손실율이 커진다. 이 풍화단면에서 원소의 거동은 각 풍화층의 pH와 생성된 이차광물의 조성에 지배를 받았다.

• Korean Chemical Engineering Research
• /
• v.55 no.2
• /
• pp.163-169
• /
• 2017

In order to investigate the electrochemical properties and the particle size effect of $LiNi_{1-x-y}Co_xAl_yO_2$ (x=0.15, y=0.045 or 0.05, NCA) for lithium ion batteries (LIBs), two commercial NCA cathode materials (NCA#1, NCA#2) were used as cathode materials for LIB. The average particle size of the NCA#1 which consisted of uniform spherical particles was found to be approximately $5m{\mu}$. NCA#2 consisted of particles with bimodal size distribution of approximately $5m{\mu}$ and $11m{\mu}$. From the results of charge-discharge performance test, a high initial discharge capacity of 197.0 mAh/g was obtained with NCA#2, which is a higher value than that with NCA#1. The cycle retentions of NCA#1 and NCA#2 up to 30 cycles were 92% and 94%, respectively.

• The Journal of the Petrological Society of Korea
• /
• v.26 no.3
• /
• pp.271-280
• /
• 2017

The Dongcheondong granite is alkali feldspar granite in Dongcheondong, Gyeongju. The granite is coarse grained and consists of alkali feldspar, quartz, amphibole, and biotite. Alkali feldspar is perthitic orthoclase and quartz often shows undulatory extinction. Plagioclase often shows albite twins, and biotite and amphibole emplace as interstitial minerals. The Dongcheondong granite is plotted in A-type area having high ($Na_2O+K_2O)/Al_2O_3$ and low (MgO+CaO)/FeOT ratio. The Dongcheondong A-type granite has higher $SiO_2$, $Na_2O$, $K_2O$, Zr, Y, and REE contents (except for Eu) and lower $TiO_2$, $Al_2O_3$, CaO, MgO, Sr, Ba, and Eu contents than I-type granites in Gyeongsang Basin. These results show that the geochemical characteristics of the Dongcheondong A-type granite are distinguished from I-type granite in Gyeongsang Basin. A-type granite in the Dongcheondong is thought to has been generated by partial melting of I-type tonalite or granodiorite.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.71-75
• /
• 2023

In this study, inorganic perovskite films with different compositions were grown by thermal chemical vapor deposition depending on the substrate and their optical properties were compared. Inorganic perovskite crystals were grown on SiO₂/Si and c-Al₂O₃ substrates using CsBr and PbBr₂, respectively, under the same growth conditions. Cs₄PbBr₆-CsPbBr₃ crystallites were grown on the SiO₂ with polycrystalline structure, while a CsPbBr₃ (100) dominant thin film was formed on the c-Al₂O₃ substrate with single crystal structure. From the photoluminescence measurement, CsPbBr₃ showed typical green emission centered at 534 nm with a full width at half maximum (FWHM) of about 91 meV. The Cs₄PbBr₆-CsPbBr₃ mixed structure exhibits blue-shifted emission at 523 nm with a narrow FWHM of 63 meV and a fast decay time of 6.88 ns. These results are expected to be useful for application in photoelectric devices such as displays, solar cells, and light sensors based on inorganic metal perovskites.

• Economic and Environmental Geology
• /
• v.46 no.5
• /
• pp.375-390
• /
• 2013

The Kenticha rare-element (Ta-Li-Nb-Be) mineralized zone is located in ophiolitic fold and thrust complex of southern Ethiopia and was firstly discovered by joint exploration program of Ethiopia-Soviet in 1980s. It includes Dermidama, Kilkele, Shuni Hill, Kenticha, and Bupo pegmatites from south to north. The Kenticha pegmatite intruded parallel to NS-striking serpentinite and talc-chlorite schist, and is exposed approximately 2 km length and 400-700 m width. The Kenticha pegmatite is internally zoned and subdivided into lower quartz-muscovite-albite granite, intermediate muscovite-quartz-albite-microcline pegmatite, and upper spodumene-quartz-albite pegmatite, based on their mineral assemblage. The major, trace elements (e.g., Rb, Li, Nb, Ta, and Ga), and element ratios (e.g., K/Rb, Nb/Ta, Mg/Li, and Al/Ga) suggest that the fractionation and solidification of pegmatite have progressed from the lower towards upper pegmatite. In contrast, unlike general magmatic fractionation, Mg/Li ratios of the Kenticha pegmatite tend to be increased towards the upper pegmatite. It may result from post-magmatic hydrothermal alteration and/or interaction with upper ultramafic rock. Rare-element mineralization in Kenticha pegmatite concentrates on the upper pegmatite, which contains up to 3.0 wt % $Li_2O$, 3,780 ppm Rb, 111 ppm Cs, 1,320 ppm Ta, and 332 ppm Nb. Ore minerals in Kenticha pegmatite mostly include tantalite, spodumene, and lepidolite, and tantalite has an association with coarser quartz-spodumene and relatively fine sacchroidal albite. The tantalite is classified into Mn-tantalite as a function of $Mn^*[Mn/(Mn+Fe)]$ and $Ta^*[Ta/(Ta+Nb)]$ values. Its compositions ($Mn^*$, $Ta^*$, and Nb/Ta) between coarse and fine tantalites are different and the former is strongly enriched in Ta and depleted in Nb compared to latter one. In conclusion, rare-element mineralization in the Kenticha pegmatite may has occurred in the latest stage of magmatic fractionation.

• Resources Recycling
• /
• v.29 no.1
• /
• pp.81-88
• /
• 2020

Recovery of gallium and indium from waste light emitting diodes has been emphasized gradually owing to high content of gallium and indium. This study was established the recovery of gallium (Ga³⁺) and indium (In³⁺) from waste gallium nitride was contained in waste light-emitting diodes. The procedure was divided into the following steps; characteristic analysis, alkaline roasting, and leaching. In characteristic analysis part, the results were used as a theoretical basis for the acid leaching part, and the chemical composition of waste light emitting diodes is 70.32% Ga, 5.31% Si, 2.27% Al and 2.07% In. Secondly, with reduction of non-metallic components by alkaline roasting, gallium nitride was reacted into sodium gallium oxide, in this section, the optimal condition of alkaline roasting is that the furnace was soaked at 900℃ for 3 hours with mixing Na₂CO₃. Next, leaching of waste light emitting diodes was extremely important in the process of recovery of gallium and indium. The result of leaching efficiency was investigated on the optimal condition accounting for the acid agent, concentration of acid, the ratio of liquid and solid, and reaction time. The optimal condition of leaching procedures was carried out for 2.0M of HCl liquid-solid mass ratio of 30 ml/g in 32minutes at 25℃ and about 96.88% Ga and 96.61% In were leached.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.220-222
• /
• 2005

We can classify two cases in a way to observe an atom of gas state or a molecule using the laser. First case is way to use dispersion phenomenon like Rayleigh scattering, Thomson scattering, Mie scattering, Raman Scattering. And Second case is a way to use change phenomenon like a LAS (Laser Absorption Spectroscopy), LIF (Laser Induced Fluorescent). In this paper, we have measured the meta-stable density and the distribution by using a LAS method in Xe discharge lamp. The laser absorption spectroscopy (LAS) is useful to investigate the behavior of such species. The xenon atoms in the $1S_4$ and $1S_5$ generate excited $Xe^*$(147nm) and $Xe_{2}^*$(173nm) dimers in Xe plasma. It is found that the intensity of VUV 147nm emission is proportional to that of the IR 828nm emission, and the VUV 173nm emission is roughly proportional to that of the IR 823nm emission. The laser is used CW laser that consist of AlGaAs semiconductor and energy level is used 823.16nm wavelength. We measured signal of monochrometer from the lamp center while will change a discharge electric current by 6mA in 3mA and calculated meta-stable state density of a xenon atom through a measured value.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.25 no.1B
• /
• pp.175-182
• /
• 2000

(A hybrid-type wireless infrared data communication module was fabricated by using the light emitting andabsorption diodes with the one-chip of integrated digital circuits. The light emitting diode with the peak spectrum of 850 nm was made from compound semiconductor material of AIGaAs and shows high speed signal transmission with the delay time of 60 nsec for the light direction angle of 30". The Si PIN photodiode showsthe good absorption rate for the range of wavelength of 450-1050 nm and convex-type epoxy lens was utilized for the spectrum filtering on the visible-range spectrum below 750 nm, The data transmission speed is 115.2 kbps and the fabricated module satisfies on the IrDA 1.0 SIR standard requirements.)ments.)