• 신재생에너지
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• 제5권4호
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• pp.34-37
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• 2009

Using six SMD(surface mount device) type AlGaAs/GaAs single junction solar cells connected in series, a power source was fabricated for a white GaN LED. The electrical properties of the power source was measured and analyzed under one sun (100mW/$cm^2$) and various indoor light (300 - 900 lux) conditions. Under 600 lux indoor light condition, output power was 17.06 ${\mu}W$ and it was 30.75 ${\mu}W$ under 900 lux indoor light condition. Using the fabricated solar cell power supply, we have turned on the white GaN LED. It was worked well under 15 ${\mu}W$(at 480 lux) power supplied from solar cell array. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).

• 신재생에너지
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• 제5권3호
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• pp.26-31
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• 2009

Using MBE growth method, GaAs/AlGaAs solar cell structure was grown. Deposited electrodes are Au/Ni/Ge for n-type and Au/Pt/Ti for p-type electrodes were deposited by E-beam evaporator. Indoor light concentrators were devised and fabricated in order to concentrate artificial solar rays. Also mirror and prism and Fresnel lens concentration system with solar simulator were devised and fabricated. Results of solar cell characteristics were measured with shutting system which can control the amount of light. Maximum power density was 2.13 W/$cm^2$ and maximum concentration was 124 sun, when mirror with Fresnel lens was used at $7854\;mm^2$ of shutter hole.

• 한국진공학회지
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• 제22권3호
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• pp.162-167
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• 2013

이종 p-InGaP/N-InAlGaP 접합 화합물 반도체 태양전지의 에피 구조를 제안하였다. 제안된 이종접합구조와 p-InGaP/p-GaAs/N-InAlGaP와 동종 p-InGaP/n-InGaP 접합구조 태양전지의 전류-전압 특성곡선을 시뮬레이션하고 결과를 비교분석하였다. 이종 p-InGaP/N-InAlGaP 접합구조에서 가장 높은 최대출력과 곡선인자(fill factor)를 나타내는 시뮬레이션 결과를 얻었으며 이를 바탕으로 제안된 이종접합 에피구조를 최적화하였다.

• Current Photovoltaic Research
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• 제5권4호
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• pp.135-139
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• 2017

We fabricated two different transparent conducting oxide thin films of ZnO doped with Ga ($Ga_2O_3$ 0.9 wt%) as well as Al ($Al_2O_3$ 2.1 wt%) (GAZO) and ZnO doped only with Al ($Al_2O_3$ 3 wt%) (AZO). It was investigated how it affects the moisture resistance of the transparent electrode. In addition, $Cu(In,Ga)Se_2$ thin film solar cells with two transparent oxides as front electrodes were fabricated, and the correlation between humidity resistance of transparent electrodes and device performance of solar cells was examined. When both transparent electrodes were exposed to high temperature distilled water, they showed a rapid increase in sheet resistance and a decrease in the fill factor of the solar cell. However, AZO showed a drastic decrease in efficiency at the beginning of exposure, while GAZO showed that the deterioration of efficiency occurred over a long period of time and that the long term moisture resistance of GAZO was better.

• 신재생에너지
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• 제5권3호
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• pp.22-25
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• 2009

For increasing the output voltage, six SMD(surface mount device) type AlGaAs/GaAs solar cells were connected in series. The electrical properties of the array were measured and compared with one sun (100 mW/$cm^2$) and indoor light (480 lux) conditions. Under one sun condition, output power was 21.57 mW and it was $14.67\;{\mu}W$ under indoor light condition. Under the indoor light condition, the intensity of the light is very low compared to one sun condition. Thus the Voc(open circuit voltage) and Isc (short circuit current) of the sample under indoor light condition decreased very much compared to that of under the one sun condition. This kind of solar cell power supply can be used as a power source for ubiquitous sensor network (USN).

• 한국정보통신학회논문지
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• 제14권4호
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• pp.929-934
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• 2010

실내조명하에서 유비쿼터스 센서 네트워크 태그 및 노드 전원으로 태양전지 사용 가능성을 실험하기 위해 PMMA(Poly-Methyl-Methacrylate) 렌즈를 단일접합 AlGaAs/GaAs 태양전지 위에 덧씌워서 렌즈로 사용한 결과 태양 전지의 특성이 향상 되었다. PMMA 렌즈를 덧씌운 효과를 비교하기 위해 AlGaAs 단일접합 태양전지에 PMMA 렌즈를 덧씌우기 전과 후의 특성을 각각 one sun 조건 ($100mW/cm^2$) 하에서 측정하였으며, 실내의 탁상램프 조명 근접거리 조건(약 1200 룩스)하에서 특성 측정 결과를 비교하였다. PMMA 렌즈를 덧씌운 결과 약 5% 정도의 효율이 향상되었고, 탁상용 형광램프 조건에서 $83\;{\mu}m/cm^2$ 이상의 전기에너지가 발생됨을 확인하였다. 실내조명 조건에서는 one sun ($100mW/cm^2$) 에 비해서 광량이 매우 작으므로 발생전압과 발생 전류가 상당히 감소하게 된다. 하지만 $83\;{\mu}m/cm^2$ 정도의 전기에너지가 발생되어 향 후 렌즈효율 개선과 모듈 설계를 통해 USN 태그 및 노드용 전원으로 충분히 적용 가능할 것으로 사료된다.

• 전자공학회논문지A
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• 제28A권1호
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• Current Photovoltaic Research
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• 제2권2호
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• pp.73-77
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• 2014

To investigate the effect of metal back-reflective layers (MBLs) on the performance of GaAs solar cells, we fabricated GaAs solar cells on Al and Ag metal layers using the transfer printing technique. We also investigated the effect of MBL texturing on the performance of transfer printed GaAs solar cells. Transfer printed solar cells with MBLs exhibited improved photovoltaic performance compared to solar cells without MBLs due to light trapping. We demonstrated GaAs solar cells with MBLs on a flexible substrate and performed systematic bending tests. All the measured characteristics of solar cells showed little change in performance.

• 대한전자공학회논문지
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• 제27권1호
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• pp.46-50
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• 1990

Heteroface AlGaAs/GaAs drift solar cells with an active area conversion efficiency of 15.9% under one sun and AM 1.5 condition have been grown by molecular beam epitaxy(MBE). These drift solar cells have graded doping profiles in the base and emitter regions. The cells have a short circuit current density (Jsc) of 19.00 mA/cm\ulcorner an open circuit voltage(Voc) of 0.93 V, and f fill factor(FF) of 0.78, respectively. Conventional solar cells with fixed doping profiles were also grown by MBE for comparison with the drift solar cells. Even though the fabrication cost of MBE grown solar cell is higher, the expected highest conversion efficiency of the single or multiple cells could compensate for the increased cost, particularly in case of space applications.

• 공업화학
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• 제30권4호
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• pp.499-503
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• 2019

GaInP/GaAs 양자우물(quantum well)구조를 N-AlGaInP/p-GaInP 이종 접합구조 태양전지에 도입하여 그 특성을 조사하고 양자우물구조가 없는 태양전지와 비교하였다. 에피층은 (100)평면이 (111)A 방향으로 $6^{\circ}$ 기울어진 p-GaAs 기판 위에 성장하였다. 태양전지 박막구조는 두께 400 nm의 N-AlGaInP 층에 590 nm의 p-GaInP와 210 nm의 GaInP/GaAs 양자 우물 구조(10 nm GaInP/5 nm GaAs의 14겹 구조)가 도입된 양자우물 태양전지 구조와 800 nm의 p-GaInP의 단일이종접합 구조로 이루어진다. 측정결과 $1{\times}1mm^2$의 태양전지에서 단락전류밀도($J_{sc}$)는 양자우물구조가 도입된 태양전지에서는 $9.61mA/cm^2$, 양자우물 구조가 없는 태양전지에서는 $7.06mA/cm^2$가 각각 측정되었다. 이차이온질량 분석법(SIMS)과 외부양자효율(external quantum efficiency) 측정을 통하여 단락전류 증가에 의한 효율증가가 흡수 스펙트럼의 확대가 아닌 양자우물에 의한 carrier 재결합의 억제에 의한 효과임을 확인하였다.