• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• 한국재료학회지
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• 제16권12호
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• The Journal of Advanced Prosthodontics
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• 제12권5호
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• pp.291-298
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• 2020

PURPOSE. The aim of this study is to evaluate the influence of repeated surface treatments on wettability and surface roughness for zirconia surface and bond strength of zirconia-based ceramics to resin cement. MATERIALS AND METHODS. Seventy blocks (10 × 10 × 3 mm) of zirconia-based ceramics were fabricated and divided into two groups according to the surface treatments: (A) 110 ㎛ Al₂O₃ airborne-particle abrasion and (R) 110 ㎛ silica modified Al₂O₃ airborne-particle abrasion. At stage 2, each group was subdivided into 5 groups according to the surface retreatments: (a) 110 ㎛ Al₂O₃ airborne-particle abrasion, (r) 110 ㎛ silica modified Al₂O₃ airborne-particle abrasion, (D) diamond bur, (Da) diamond bur + 110 ㎛ Al₂O₃ airborne-particle abrasion, and (Dr) diamond bur + 110 ㎛ silica modified Al₂O₃ airborne-particle abrasion. Cylinders of self-adhesive resin cement were cemented onto each treated ceramic surface and subjected to micro-shear bond strength test. Additional specimens were prepared for roughness and wettability analyses. The data were subjected to t-test and One-way ANOVA followed by Tukey's post hoc test (α=.05). RESULTS. At stage 1, group R presented higher bond strength values than group A (P=.000). There was a statistically significant increase of bond strength at stage 2 for group A (P=.003). The diamond bur influenced the surface roughness, increasing the values (P=.023). Group R provided better wettability. Regardless of the applied surface treatment, most of failures were adhesive. CONCLUSION. The combination of application and reapplication of Rocatec Plus showed the best results of bond strength. Surface retreatment and recementation might be an indicated clinical strategy.

• 한국표면공학회지
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• 제55권5호
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• pp.284-291
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• 2022

Herein, we studied ultrathin Cu-layer-based transparent heaters embedded between a ZnO underlayer and an Al₂O₃ overlayer. The anti-reflecting functions for the ZnO and Al₂O₃ layers by independently varying the layer thicknesses, with the Cu layer thickness fixed at 8.5 nm. The smallest visible light transmittance of 11.1% was achieved when the overlayer and underlayer thicknesses were 90 and 30 nm, respectively. We conducted electrically driven Joule heating test for the Cu layers having thicknesses of 8.5 nm (R_s: 14.7 Ohm/sq.) and 19 nm (R_s: 3.4 Ohm/sq.). External voltages were increased with an interval of 2 V until irreversible failures occurred at temperatures of ~390 ℃ and 550 ℃, respectively. At each voltage increase before heater failures, the heater exhibited superior thermal response with the heater temperatures reaching over 90% of the final temperatures. The heaters also showed excellent reproducibility when turning on and off the heater repeatedly.

• 공학논문집
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• 제2권1호
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• pp.139-145
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• 1997

촉매연소용 촉매담체인 $\gamma$-$Al_2O_3$의 열안정화에 미치는 Ba의 첨가 효과에 대하여 연구하였다. Ba의 첨가는 $Ba(No_3)_3$.$6H_2O$를 $\gamma$-$Al_2O_3$ 분말에 wet impergnation시키는 방법으로 행하였다. Ba는 $\gamma$-$Al_2O_3$의 소결을 억제함으로써 $\gamma$-$Al_2O_3$의 열안정화에 효과적인 첨가제임을 확인하였으며 최적의 첨가량은 전체 열처리 조건에서 5 mol%임을 알 수 있었다. 이러한 Ba첨가에 의한 열안정화 효과는 이온반경이 큰 $Ba^{2+}$이온이 $\Al^{3+}$이온의 자리에 치환하여 $\Al^{3+}$이온의 표면 확산을 억제하는 효과에서 기인하는 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• 제23권8호
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• pp.1121-1126
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• 2002

Two anhydrous crystal structures of fully dehydrated Cd2+ - and Cs+ -exchanged zeolite X, Cd32Cs28Si100Al92O384 (Cd32Cs28-X: a = 24.828(11) $\AA)$ and fully dehydrated Cd,sup>2+ - and Rb+ -exchanged zeolite X, Cd28Rb36Si100Al92O384 (Cd28Rb36-X: a = 24.794(2) $\AA$), have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at $21(1)^{\circ}C.$ The structures were refined to the final error indices, R1 = 0.058 and R2 = 0.065 with 637 reflections for Cd32Cs28-X and R1 = 0.086 and R2 = 0.113 with 521 reflections for Cd28Rb36-X for which I > $3\sigma(I)$. In the structure of Cd,sub>32Cs28-X, 16 Cd2+ ions fill the octahedral sites I at the centers of the double six rings (Cd-O = $2.358(8)\AA$ and O-Cd-O = $90.8(3)^{\circ}$ ). The remaining 16 Cd2+ ions occupy site II (Cd-O = $2.194(8)\AA$ and O-Cd-O = $119.7(4)^{\circ})$ and six Cs+ ions occupy site II opposite to the single six-rings in the supercage; each is $2.322\AA$ from the plane of three oxygens (Cs-O = 3.193(13) and O-Cs-O = $73.0(2)^{\circ}).$ Aboutten Cs+ ions are found at site II', $1.974\AA$ into the sodalite cavity from their three oxygen plane (Cs-O = $2.947(8)\AA$ and O-Cs-O = $80.2(3)^{\circ}).$ The remaining 12 Cs+ ions are distributed over site III' (Cs-O = 3.143(9) and O-Cs-O= $59.1(2)^{\circ})$. In the structure of Cd28Rb36-X, 16 Cd2+ ions fill the octahedral sites I at the center of the double-sixrings (Cd-O = 2.349(15) and O-Cd-O = $91.3(5)^{\circ}$ ). Another 12 Cd2+ ions occupy two different II sites (Cd-O = $2.171(18)/2.269(17)\AA$ and O-Cd-O = $119.7(7)/113.2(7)^{\circ}).$ Fifteen Rb+ ions occupy site II (Rb-O = $2.707(17)\AA$ and O-Rb-O = $87.8(5)^{\circ}).$ The remaining 21 Rb+ ions are distributed over site III' (Rb-O = $3.001(16)\AA$ and O-Rb-O = $60.7(4)^{\circ})$. It appears that the smaller and more highly charged Cd2+ ions prefer sites I and Ⅱ in that order, and the larger Rb+ and Cs+ ions, which are less able to balance the anionic charge of the zeolite framework, occupy sites II and II' with the remainder going to the least suitable site in the structure, site III'.The maximum Cs+ and Rb+ ion exchanges were 30% and 39%, respectively. Because these cations are too largeto enter the small cavities and their charge distributions may be unfavorable, cation-sieve effects might appear.

• Corrosion Science and Technology
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• 제9권2호
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• pp.81-86
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• 2010

The mechanisms of selective oxidation of intercritically annealed CMnAl TRIP steels in a Continuous Galvanizing Line (GCL) were studied by cross-sectional observation of the surface and sub-surface regions by means of High Resolution Transmission Electron Microscopy (HR-TEM). The selective oxidation and nitriding of an intercritically annealed CMnAl TRIP steel in a controlled dew point 10%$H_2+N_2$ atmosphere resulted in the formation of c-xMnO.$MnO_2$ (1${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) particles on the steel surface. Single crystal c-xMnO.$SiO_2$ ($2{\leq}x{\leq}4$) oxide particles were also observed on the surface. A thin film of crystalline c-xMnO.$SiO_2$ (2${\leq}$x<3) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) was present between these particles. In the sub-surface region, internal oxidation, nitriding and intermetallic compound formation were observed. In the first region, large crystalline c-xMnO.$SiO_2$ ($1{\geq}x{\geq}2$) and c-xMnO.$Al_2O_3$ ($x{\geq}1$) oxides particles were present. In the second region, c-AlN particles were observed, and in a third region, small $MnAl_x$ (x>1) intermetallic compound particles were observed.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1022-1025
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• 2005

ZnO 나노 구조의 형성 시 기판 표면에 의한 영향을 알아보기 위하여, Si(111) 기판과 $Al_2O_3$C (0111)면, A (0112)면, R (2110)면의 기판을 사용하여 나노 구조를 형성시키고 광학적 특성의 변화를 관찰하였다. ZnO 나노 구조는 대기 중에서 수평형 성장로를 이용하였고, 무촉매법으로 Zn 소스만을 사용하여 성장시켰다. 기판의 온도는 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$로 설정하였고, 성장된 나노 구조는 He-Cd laser (325nm)를 이용하여 10 K에서 300K까지 온도를 변화시키면서 발광 특성의 변화를 분석하였다. 상온에서 측정한 Photoluminescence (PL) 결과로부터, Si과 $Al_2O_3$ 기판에서 각각 384nm, 391 nm의 UV 발광이 관찰되었다. Si 기판에서는 산소 결핍형 결함에 의한 것으로 판단되는 녹색 발광이 관찰되었지만 $Al_2O_3$ 기판에서는 녹색 발광이 관찰되지 않았다. 그리고 온도 변화에 따른 PL 측정 결과 Si과 $Al_2O_3$ 기판에서의 UV 발광 피크의 기원이 다름을 확인할 수 있었다. 이러한 발광 특성의 차이는 기판의 표면 에너지 차이가 나노 구조의 성장 매커니즘에 영향을 주어 발생한 것으로 생각된다.

• 한국표면공학회지
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• 제27권2호
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• pp.91-98
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• 1994

For the plasma sprayed as well as the EB-PVD thermal barrier coatings, the fracture paths within the oxidation products developed at the interface between the partially stabilized zirconia ceramic coating and NiCoCrAlY bond coat during cyclic thermal oxidation has been investigated. It was observed that the fracture in the oxidation products primarily took place within the oxide such as $Ni_{1-x}Co_3(Al_,Cr)_2O_4$ or at the interface between the oxide and $Al_2O_3$. It was found that Al2O3 developed first, followed by the Ni/Co/Cr rich oxides such as ,,$Ni_{1-x}Co_x(Al_,Cr)_2O_4$ $Cr_2O_3$and NiO at the interface between the ceramic coating and the bond coat in a cyclic high temperature environment. It was therfore concluded that the formation of the oxide containing Ni, Cr and Co was a life-limiting event for thermal barrier coatings during cyclic thermal oxidation.

• 대한화학회지
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• 제35권3호
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• pp.275-279
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• 1991

고순도 암모니움 명반 결정을 합성한 후 열분해 시켜 높은 순도의 초미세 산화알루미늄(${\alpha}-Al_2O_3$)분말을 합성하였다. 이 때 불순물인 Na$_2$O의 혼입과 Al(OH)$_3$의 침전을 최대한으로 방지하기 위해 pH = 1.5∼2.5의 영역에서 암모니움 명반을 합성하였으며, pH 조건은 수용액 중에서 Na와 Al 이온의 수산화물과 탄산염 형성을 고려, pH에 따른 각 이온종들의 농도가 이론적으로 계산되었다. 그 결과 ${\alpha}-Al_2O_3$의 순도는 99.7%이상이고, 입자는 ${\phi}$ = 0.1∼0.5 ${\mu}$m의 균일한 크기의 분말이 얻어졌다.